Volume 40; Issue 2

Microelectronics Reliability

Volume 40; Issue 2

1

Solder joint fatigue models: review and applicability to chip scale packages

W.W Lee, L.T Nguyen, G.S Selvaduray

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 244 KB

english, 2000

2

Method for assessing remaining life in electronic assemblies

F.P McCluskey, Y.D Kweon, H.J Lee, J.W Kim, H.S Jeon

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 1.83 MB

english, 2000

3

A characteristic analysis of high-speed integrated circuit chip based on laser probe

Tian Xiaojian, Yi Maobin, Sun Wei

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 153 KB

english, 2000

4

Design error diagnosis in digital circuits with stuck-at fault model

A. Jutman, R. Ubar

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 361 KB

english, 2000

5

Effective method for evaluation of semiconductor laser quality

Hongyan Li, Liyun Qi, Jiawei Shi, Enshun Jin, Zhengting Li, Dingsan Gao, Jinzhong Yu, Liang Guo

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 212 KB

english, 2000

6

Effect of drain voltage on channel temperature and reliability of pseudomorphic InP-based HEMTs

M. Dammann, M. Chertouk, W. Jantz, K. Köhler, W. Marsetz, K.H. Schmidt, G. Weimann

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 209 KB

english, 2000

7

Processing induced material interactions determining the reliability of LTCC multichip modules

Gábor Harsányi

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 232 KB

english, 2000

8

SiGe, GaAs, and InP Heterojunction Bipolar Transistors; Jiann S. Yuan, John Wiley & Sons, Inc., 605 Third Avenue, New York, NY 10158-0012, USA, 1999, 463 pp. ISBN: 0-471-19746-7, GBP 64.50

J Karamarković

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 69 KB

english, 2000

9

InP-Based Materials and Devices: Physics and Technology; O. Wada, H. Hasegawa, John Wiley & Sons, Inc., New York. ISBN 0-471-18191-9, £80.95

Milan M Jevtić

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 71 KB

english, 2000

10

Degradation mechanisms in polysilicon emitter bipolar junction transistors for digital applications

Loris Vendrame, Paolo Pavan, Giulio Corva, Alessandra Nardi, Andrea Neviani, Enrico Zanoni

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 780 KB

english, 2000

11

The influence of stud bumping stress on device degradation in scaled MOSFETs

Nobuhiro Shimoyama, Katsuyuki Machida, Masakazu Shimaya, Hiroshi Koizumi, Hakaru Kyuragi

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 1.31 MB

english, 2000

12

Perspectives on giga-bit scaled DRAM technology generation

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 1.49 MB

english, 2000

13

Analysis of the noise characteristics of current-feedback operational amplifier

Gaetano Palumbo, Salvatore Pennisi

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 200 KB

english, 2000

14

Fault model for sub-micron CMOS ULSI circuits reliability assessment

B. Lisenker, Y. Mitnick

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 459 KB

english, 2000

15

Analysis of colorimetric system under foggy, thermal and electrical conditions with spice/vhdl-ams

J.-J. Charlot, J.-K. Seon, J.-F. Charlot

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 784 KB

english, 2000

16

A simple VLSI spherical particle-induced fault simulator: application to DRAM production process

Koji Nakamae, Hisanaga Ohmori, Hiromu Fujioka

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 2.43 MB

english, 2000

17

Electrical characterization of ultra-shallow n+p junctions formed by AsH3 plasma immersion implantation

B.L Yang, H Wong, P.G Han, M.C Poon

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 174 KB

english, 2000

18

Analysis of Fowler–Nordheim injection in NO nitrided gate oxide grown on n-type 4H–SiC

Hui-Feng Li, Sima Dimitrijev, Denis Sweatman, H.Barry Harrison

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 148 KB

english, 2000

19

Fundamentals of III–V Devices HBTs, MESFETs, and HFETs/HEMTs; William Liu, John Wiley & Sons, Inc., 605 Third Avenue, New York, NY 10158-0012, USA, 1999, 505 pp. ISBN: 0-471-29700-3, GBP 61.50

J Karamarković

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 72 KB

english, 2000

20

A new method to extract diode parameters under the presence of parasitic series and shunt resistance

J.C Ranuárez, A Ortiz-Conde, F.J Garcı́a Sánchez

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 147 KB

english, 2000