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Device characteristics of AlGaAs/InGaAs HEMTs fabricated by inductively coupled plasma etching
Jin-Hee Lee, Hyung-Sup Yoon, Jae Yeob Shim, Hae-Chun KimVolume:
435
Year:
2003
Language:
english
Pages:
6
DOI:
10.1016/s0040-6090(03)00405-x
File:
PDF, 432 KB
english, 2003