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Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
Shin Yokoyama, Hiroshi Goto, Takahiro Miyamoto, Norihiko Ikeda, Kentaro ShibaharaVolume:
112
Year:
1997
Pages:
7
DOI:
10.1016/s0169-4332(96)01020-3
File:
PDF, 434 KB
1997