Volume 112; Issue none

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Applied Surface Science
Volume 112; Issue none

Applied Surface Science

Volume 112; Issue none

1

Molecular layer epitaxy by real-time optical process monitoring

K.J. Bachmann, C. Höpfner, N. Sukidi, A.E. Miller, C. Harris, D.E. Aspnes, N.A. Dietz, H.T. Tran, S. Beeler, K. Ito, H.T. Banks, U. Rossow

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 549 KB

1997

2

The electrical field effect on the growth of titanium oxide layers by ML-ALE

V.E Drozd, N.N Kopilov, V.B Aleskovski

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 387 KB

1997

3

Surface chemistry of In2O3 deposition using In(CH3)3 and H2O in a binary reaction sequence

A.W Ott, J.M Johnson, J.W Klaus, S.M George

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 733 KB

1997

4

Atomic layer epitaxy of CdTe, MgTe and MnTe; growth of CdTe/MnTe tilted superlattices on vicinal surfaces

J.M Hartmann, M Charleux, H Mariette, J.L Rouvière

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 443 KB

1997

5

Growth mechanisms of mixed oxides on alumina

Suvi Haukka, Marina Lindblad, Tuomo Suntola

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 499 KB

1997

6

Physical principles of ultrahigh vacuum atomic layer epitaxy

Marian A Herman

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 770 KB

1997

7

A study of the surface electronic properties of Na/D/Si(100) by metastable de-excitation spectroscopy

Shozo Hongo, Norihiro Fujimoto, Toshio Urano

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 383 KB

1997

8

Surface atomic processes during flow-rate modulation epitaxy

Y Horikoshi, S Ando, H Ando, N Kobayashi

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 512 KB

1997

9

ALE growth of ZnS1−xSex thin films by substituting surface sulfur with elemental selenium

Jarkko Ihanus, Mikko Ritala, Markku Leskelä, Eero Rauhala

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 274 KB

1997

10

Hetero-interface control and atomic layer epitaxy of SiC

Hiroyuki Matsunami, Tomoaki Hatayama, Takashi Fuyuki

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 346 KB

1997

11

Modifying ALE grown In2O3 films by benzoyl fluoride pulses

Timo Asikainen, Mikko Ritala, Wei-Min Li, Reijo Lappalainen, Markku Leskelä

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 332 KB

1997

12

Quantum wire structures incorporating (GaAs)m(GaP)n short-period superlattice fabricated by atomic layer epitaxy

Hideo Isshiki, Yoshinobu Aoyagi, Takuo Sugano

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 304 KB

1997

13

In situ monitoring of hydrogen adsorption on (001) Ga surface in GaAs atomic layer epitaxy

Akinori Koukitu, Tetsuya Taki

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 368 KB

1997

14

Real-time observation of alternating growth on GaSb(001) using core-level photoelectron spectroscopy

Fumihiko Maeda, Yoshio Watanabe, Masaharu Oshima

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 368 KB

1997

15

Growth and optical evaluation of InGaAs/GaAs quantum dots self-formed during alternate supply of precursors

Kohki Mukai, Nobuyuki Ohtsuka, Hajime Shoji, Mitsuru Sugawara

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 538 KB

1997

16

Adsorption mechanisms of tertiarybutylarsine on Ga- and As-rich GaAs(001) surfaces

Masashi Ozeki, Jie Cui, Masafumi Ohashi

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 529 KB

1997

17

Atomic layer etching of germanium

Keiji Ikeda, Shigeru Imai, Masakiyo Matsumura

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 287 KB

1997

18

Digital etching of GaAs

T Meguro, Y Aoyagi

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 534 KB

1997

19

Effects of active hydrogen on atomic layer epitaxy of GaAs

T Meguro, H Isshiki, J.-S Lee, S Iwai, Y Aoyagi

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 233 KB

1997

20

Insertion of ALE grown ZnTe monomolecular films in CdTe/CdZnTe heterostructures to probe the quantum well eigenstates

D Stifter, F Kany, B Daudin, A Wasiela, H Mariette

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 394 KB

1997

21

Strain contrast in scanning tunneling microscopy imaging of subsurface dislocations in lattice-mismatched heteroepitaxy

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 1001 KB

1997

22

ALE-reactor for large area depositions

Jarmo I Skarp, Pekka J Soininen, Pekka T Soininen

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 218 KB

1997

23

Growth of LaCoO3 thin films from β-diketonate precursors

Helene Seim, Minna Nieminen, Lauri Niinistö, Helmer Fjellvåg, Leena-Sisko Johansson

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 509 KB

1997

24

Reflection mass spectrometry studies on UHV ALE of Cd1−xZnxTe (0≤x≤1) compounds

J.T Sadowski, M.A Herman

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 351 KB

1997

25

Atomic layer deposition in traveling-wave reactor: In situ diagnostics by optical reflection

A Rosental, P Adamson, A Gerst, H Koppel, A Tarre

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 312 KB

1997

26

Advanced ALE processes of amorphous and polycrystalline films

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 517 KB

1997

27

Atomic layer-by-layer epitaxy of oxide superconductors by MOCVD

Shuu'ichirou Yamamoto, Atsushi Kawaguchi, Kouji Nagata, Takeo Hattori, Shunri Oda

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 579 KB

1997

28

Atomic-layer chemical-vapor-deposition of silicon-nitride

Shunsuke Morishita, Satoshi Sugahara, Masakiyo Matsumura

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 382 KB

1997

29

Study of the SiO2 layer growth by the ML-ALE method

V.E. Drozd, V.P. Tolstoy

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 226 KB

1997

30

Precise control of two dimensional growth of InAs on GaAs (111)A surfaces studied by scanning tunneling microscopy

H Yamaguchi, J.G Belk, X.M Zhang, J.L Sudijono, M.R Fahy, T.S Jones, B.A Joyce

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 361 KB

1997

31

Atomic layer deposition of ZnO transparent conducting oxides

Akira Yamada, Baosheng Sang, Makoto Konagai

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 357 KB

1997

32

Non-equilibrium microstructure of the (110) vicinal surface of Si during MBE

M.I. Vasilevskiy, A.Yu. Andreev, V.P. Kuznetsov, S.V. Stroganova, H. Sitter

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 355 KB

1997

33

The synthesis of Mn(IV) oxide nanolayers by the successive ionic layer deposition method

V.P. Tolstoy, I.V. Murin, A. Reller

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 166 KB

1997

34

Atomic layer epitaxy of GaAs using GaBr and GaI sources

Tetsuya Taki, Akinori Koukitu

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 312 KB

1997

35

Atomic-layer etching of Ge using an ultraclean ECR plasma

Takayuki Sugiyama, Takashi Matsuura, Junichi Murota

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 256 KB

1997

36

Optical and structural properties of ZnSe/GaAs interfaces

M Garcı́a-Rocha, E López-Luna, O de Melo, I Hernández-Calderón, H Sitter, A.Yu Andreev

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 413 KB

1997

37

In situ study of atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2O

Kaupo Kukli, Jaan Aarik, Aleks Aidla, Hele Siimon, Mikko Ritala, Markku Leskelä

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 430 KB

1997

38

Selective area growth at multi-atomic-height steps arranged on GaAs (111)A vicinal surfaces by atomic layer epitaxy

Jeong-Sik Lee, Hideo Isshiki, Takuo Sugano, Yoshinobu Aoyagi

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 466 KB

1997

39

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

F.G McIntosh, E.L Piner, J.C Roberts, M.K Behbehani, M.E Aumer, N.A El-Masry, S.M Bedair

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 271 KB

1997

40

Synthesis and investigation of heterooxides by ML-ALE method

V.E Drozd, A.P Baraban, I.O Nikiforova, V.B Aleskovski

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 257 KB

1997

41

Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy

Shin Yokoyama, Hiroshi Goto, Takahiro Miyamoto, Norihiko Ikeda, Kentaro Shibahara

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 434 KB

1997

42

Modeling of germanium atomic-layer-epitaxy

Satoshi Sugahara, Masakiyo Matsumura

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 771 KB

1997