Volume 52; Issue 9

Main
Journal of Applied Physics
Volume 52; Issue 9

Journal of Applied Physics

Volume 52; Issue 9

1

Optical properties of diffusion‐formed Au2Al

Inagaki, T., Arakawa, E. T., Callcott, T. A.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 716 KB

english, 1981

2

Thermalization of sputtered atoms

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 445 KB

english, 1981

3

Electrical characteristics of TiN contacts to N silicon

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 602 KB

english, 1981

4

Intrinsic stress in thin films deposited on anisotropic substrates and its influence on the natural frequencies of piezoelectric resonators

Tiersten, H. F.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 1.07 MB

english, 1981

5

Effect of donor impurities on the density of states near the band edge in silicon

Bennett, Herbert S.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 870 KB

english, 1981

6

Photoluminescence of AlxGa1âxAs grown by molecular beam epitaxy

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 600 KB

english, 1981

7

Reassessment of space-charge and central-cell scattering contributions to GaAs electron mobility

Walukiewicz, W.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 326 KB

english, 1981

8

Multiple scattering of acoustic waves by random distributions of discrete scatterers with the use of quasicrystalline-coherent potential approximation

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 826 KB

english, 1981

9

Fowler-Nordheim electron tunneling in thin Si-SiO2-Al structures

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 868 KB

english, 1981

10

The anode transition in a hydrogen glow discharge

Clothiaux, E. J.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 391 KB

english, 1981

11

Numerical analysis of vortex motion in two-dimensional array of Josephson junctions

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 955 KB

english, 1981

12

Displaced hysteresis loop of Cu-Mn-Al alloy

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 520 KB

english, 1981

13

An n-In0.53Ga0.47As/n-InP rectifier

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 545 KB

english, 1981

14

Evidence for dislocation damping coefficient increases during gamma ray irradiation of sodium chloride and potassium chloride single crystals

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 869 KB

english, 1981

15

Neutron transmutation as a method to calibrate the infrared absorption of indium in silicon

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 585 KB

english, 1981

16

Refractive index decrease phenomena in SiO2–Ta2O5 waveguide films by CO2 laser irradiation

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 653 KB

english, 1981

17

Electromagnetic properties of thin-film transformer-coupled superconducting tunnel junctions

Finnegan, T. F.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 371 KB

english, 1981

18

Space-charge-limited current effects in n-type CuInSe2/Au Schottky diodes

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 355 KB

english, 1981

19

Determination of the H distribution in reactively sputtered amorphous silicon-hydrogen alloys by proton nuclear magnetic resonance

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 611 KB

english, 1981

20

Intervalley scattering in Ga1−xAlxAs alloys

Saxena, Ashok K.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 484 KB

english, 1981

21

Particle statistics and transport in compensated semiconductors with localized charge carriers

Van Zandt, L. L.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 846 KB

english, 1981

22

Pole figure measurements of drawn and rolled PVF2 films

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 487 KB

english, 1981

23

Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxy

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 630 KB

english, 1981

24

Structural model of sputtered fluorinated amorphous silicon

Matsumura, Hideki

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 666 KB

english, 1981

25

Effect of forming gas anneal on Al–SiO2 internal photoemission characteristics

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 409 KB

english, 1981

26

High resistance mode in a modified Penning discharge

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 678 KB

english, 1981

27

Optically pumped laser lines of Na2 pumped by Kr+ (6471 Å) and HeNe (6328 Å) lasers: Identification of old lines and prediction of possible new lines

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 613 KB

english, 1981

28

Pulse response properties of Josephson transmission lines and their application to logic circuits

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 521 KB

english, 1981

29

On the transient space-charge-limited current problem—a solution in Lagrangian mass variables

Johnson, Stevens F.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 481 KB

english, 1981

30

Spatial characteristics of displacement cascades in metals

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 887 KB

english, 1981

31

Voltage-current relationship for pulsed arc discharges

Walsh, Peter J.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 678 KB

english, 1981

32

Melting point relations for posttransition elements

Van Uitert, L. G.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 493 KB

english, 1981

33

Analysis of the photo voltage decay (PVD) method for measuring minority carrier lifetimes in P-N junction solar cells

von Roos, Oldwig

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 581 KB

english, 1981

34

InGaAsP/InP buried-heterostructure lasers (λ = 1.5 μm) with chemically etched mirrors

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 422 KB

english, 1981

35

Dragging of domains by an electric current in ferromagnetic bulk cobalt at 4 K

Ramanan, V. R. V.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 865 KB

english, 1981

36

Accuracy of theoretical predictions concerning the location of the cross-over points on the secondary-electron emission yield curve

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 434 KB

english, 1981

37

A consistency condition for microwave absorption in an air plasma

Hastings, D. E.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 462 KB

english, 1981

38

A phase analysis in pseudobinary Pb(Fe1/2Nb1/2)O3−Pb(Mg1/2W1/2)O3 solid solution

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 698 KB

english, 1981

39

A method of determining minority carrier lifetime and doping level profiles of low-doped metal-oxide-semiconductor structures using pulsed photoinjection

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 680 KB

english, 1981

40

Noise sources of hot carriers in space-charge regimes

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 690 KB

english, 1981

41

Formation of Al-nitride films at room temperature by nitrogen ion implantation into aluminum

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 566 KB

english, 1981

42

Hydrogen sensitive Schottky barriers in metal-copper phthalocyanine junctions and their photovoltaic effect

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 553 KB

english, 1981

43

A study of the strain in the damaged surface layer of V3Si after 2.0-MeV He-ion implantation

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 1.00 MB

english, 1981

44

Thermally stimulated current measurements on the trapping levels in a Cu-phthalocyanine binder photoreceptor

Hoshino, Yasushi

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 556 KB

english, 1981

45

1H nuclear magnetic resonance studies of domain structures in polymers

Cheung, T. T. P.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 1.04 MB

english, 1981

46

Optimization of the effects of power dependent refractive indices in optical waveguides

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 427 KB

english, 1981

47

11% efficient single-crystal solar cells and 10% efficient polycrystalline cells made from refined metallurgical silicon

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 552 KB

english, 1981

48

Response of the electric field in a positive column in helium to a current perturbation

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 679 KB

english, 1981

49

The effects of water on oxide and interface trapped charge generation in thermal SiO2 films

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 1.59 MB

english, 1981

50

Formation of clean stacking faults and oxide microdefects in Czochralski silicon

Futagami, Motonobu

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 1.43 MB

english, 1981

51

Effect of background doping on the electron mobility of (Al,Ga)As/GaAs heterostructures

Drummond, T. J.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 446 KB

english, 1981

52

Repetitive Q-switched operation of x-axis Nd:La2Be2O5

Tucker, Armin W.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 626 KB

english, 1981

53

A study of the ionization rates of electrons and holes in GaAs using a computer analysis of the properties of GaAs IMPATTs

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 385 KB

english, 1981

54

A comparison of melting point relations for metals, tetrahedral semiconductors, and metal carbides and nitrides with the rocksalt structure

Van Uitert, L. G.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 640 KB

english, 1981

55

On the surface recombination current of metal-insulator semiconductor inversion layer solar cells

Nielsen, Otto M.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 447 KB

english, 1981

56

Transport properties of thin metal films with energy-dependent relaxation time

Rahman, Ijaz-ur-

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 469 KB

english, 1981

57

Molecular beam epitaxial ZnSe:Mn dc electroluminescent cell with very low threshold voltage

Mishima, Tomoyoshi

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 420 KB

english, 1981

58

Soft x-ray diagnostic for a z-pinch discharge

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 391 KB

english, 1981

59

Transmission electron microscopy investigation of silicide formation on slightly oxidized silicon substrates

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 873 KB

english, 1981

60

Generation of strong time compressed light ion beams

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 616 KB

english, 1981

61

A transparent-conducting coating for a-Si:H based devices

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 370 KB

english, 1981

62

Luminescence from HgCdTe alloys

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 872 KB

english, 1981

63

Persistent photoconductivity in thin epitaxial GaAs

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 558 KB

english, 1981

64

Efficient operation of an atomic thallium photodissociation laser at 535.0 nm

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 468 KB

english, 1981

65

The electrical characteristics of InP Schottky diodes

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 417 KB

english, 1981

66

Suppression of shock excitation and nonlinear process of acoustic domains in CdS caused by a two-step pulse application

Kaneiwa, Toshiyuki

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 456 KB

english, 1981

67

Nonhysteretic Josephson tunnel junctions for microwave detection

Hartfuss, H. J.

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 481 KB

english, 1981

68

Iron in heat-treated gallium arsenide

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 661 KB

english, 1981

69

Electron beam induced dissociation and conductivity of SnO2 films

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 422 KB

english, 1981

70

The elastic stiffness coefficients of nickel-iron single-crystal alloys at room temperature

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 351 KB

english, 1981

71

Correlation between Schottky barrier heights on compound semiconductors and metal and semiconductor electronegativities

Journal:

Journal of Applied Physics

Year:

1981

Language:

english

File:

PDF, 444 KB

english, 1981