Volume 56; Issue 2

Main
Journal of Applied Physics
Volume 56; Issue 2

Journal of Applied Physics

Volume 56; Issue 2

1

Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K

Okada, Yasumasa, Tokumaru, Yozo

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 752 KB

english, 1984

2

Electroluminescence studies in silicon dioxide films containing tiny silicon islands

DiMaria, D. J., Kirtley, J. R., Pakulis, E. J., Dong, D. W., Kuan, T. S., Pesavento, F. L., Theis, T. N., Cutro, J. A., Brorson, S. D.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 1.57 MB

english, 1984

3

Alloy disorder scattering contribution to low‐temperature electron mobility in semiconductor quantum well structures

Ogale, S. B., Madhukar, A.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 915 KB

english, 1984

4

Y3Fe5O12 single-crystal growth by top seeded solution growth method

Oka, Kunihiko, Unoki, Hiromi

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 575 KB

english, 1984

5

A novel structure, high conversion efficiency p-SiC/graded p-SiC/i-Si/n-Si/metal substrate-type amorphous silicon solar cell

Lim, Koeng Su, Konagai, Makoto, Takahashi, Kiyoshi

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 630 KB

english, 1984

6

Photoluminescence of AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

Kawai, H., Kaneko, K., Watanabe, N.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 674 KB

english, 1984

7

Effect of short-range order on the thermal stability in amorphous Ti-Ni alloys

Buschow, K. H. J.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 513 KB

english, 1984

8

Mode conversion of obliquely incident guided magnetic waves by a grating on a yttrium iron garnet film for the normal magnetization

Seshadri, S. R., Tsai, Ming-Chi

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 1.10 MB

english, 1984

9

Copper electromigration in polycrystalline copper sulfide

Allen, Leslie H., Buhks, Ephraim

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 675 KB

english, 1984

10

fcc needle crystals of molybdenum grown from Mo(CO)6

Okuyama, F., Fujimoto, Y.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 401 KB

english, 1984

11

Organic-on-inorganic semiconductor contact barrier diodes. II. Dependence on organic film and metal contact properties

Forrest, S. R., Kaplan, M. L., Schmidt, P. H.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 916 KB

english, 1984

12

The importance of the anode field in controlling the generation rate of the donor states at the Si–SiO2 interface

Fischetti, Massimo V.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 477 KB

english, 1984

13

The effects of hydrogen partial pressure on reactively sputtered amorphous silicon

Ross, R. C., Messier, R.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 652 KB

english, 1984

14

Growth solution baking effects on the residual impurities in GaAs liquid- phase-epitaxy layers

Garrido, J., Castaño, J. L., Piqueras, J.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 458 KB

english, 1984

15

Conditions for stability of bubble nuclei in solid surfaces contacting a liquid-gas solution

Ward, C. A., Levart, Eugene

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 1.10 MB

english, 1984

16

Influence of F and Cl on the recrystallization of ion-implanted amorphous Si

Suni, I., Shreter, U., Nicolet, M-A., Baker, J. E.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 706 KB

english, 1984

17

Role of stress on the parabolic kinetic constant for dry silicon oxidation

Fargeix, A., Ghibaudo, G.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 448 KB

english, 1984

18

Field-induced uniaxial magnetic anisotropy of electrodeposited Fe-Co films

Tanahashi, K., Maeda, M.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 407 KB

english, 1984

19

Gauge factor of manganin under uniaxial stress conditions

Partom, Y., Rosenberg, Z., Keren, B.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 359 KB

english, 1984

20

Impurity effects of the 3d transition metal atoms on the first-order magnetic and electrical transition in NiS

Futami, T., Anzai, S.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 934 KB

english, 1984

21

Optical emission actinometry and spectral line shapes in rf glow discharges

Gottscho, Richard A., Donnelly, Vincent M.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 725 KB

english, 1984

22

Response of potential probes to nonequilibrium situations

Manifacier, J.-C., Moreau, Y., Henisch, H. K., Rieder, G.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 784 KB

english, 1984

23

The temperature dependence of liquid-crystal tilt angles

van Sprang, H. A., Aartsen, R. G.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 1.21 MB

english, 1984

24

Photovoltage profiling of hydrogenated amorphous Si solar cells

Szostak, D. J., Goldstein, B.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 1.12 MB

english, 1984

25

Amorphous-Si/crystalline-Si facet formation during Si solid-phase epitaxy near Si/SiO2 boundary

Kunii, Yasuo, Tabe, Michiharu, Kajiyama, Kenji

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 744 KB

english, 1984

26

Two-dimensional metallic aggregates in β alumina-type structure

Boilot, J. P., Collin, C., Comes, R.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 565 KB

english, 1984

27

Photon effect on electron-irradiated boron-doped silicon solar cell

Roux, Michel, Bernard, Jacques, Reulet, René, Crabb, Roy L.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 664 KB

english, 1984

28

Effect of interface pinning in multilayer bubble garnet films on the dynamics of domain walls

Żebrowski, J. J.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 812 KB

english, 1984

29

Single-crystal Ge films on SiO2-coated Si wafers by laterally seeded heteroepitaxy

Nishioka, Takashi, Shinoda, Yukinobu, Ohmachi, Yoshiro

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 764 KB

english, 1984

30

Physical mechanisms of dc switching in a liquid-crystal bistable boundary layer display

Thurston, R. N., Cheng, Julian, Meyer, Robert B., Boyd, Gary D.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 1.11 MB

english, 1984

31

Decay of the electron-beam-induced current in hydrogenated amorphous silicon devices

Yacobi, B. G., Herrington, C. R., Matson, R. J.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 476 KB

english, 1984

32

Comment on ‘‘Threshold switching in chalcogenide-glass thin films’’

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 328 KB

english, 1984

33

Excimer laser projection photoetching

Latta, M., Moore, R., Rice, S., Jain, K.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 411 KB

english, 1984

34

Some characteristics of In-diffused CuInSe2 homojunctions

Shih, I., Shahidi, A. Vahid, Champness, C. H.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 503 KB

english, 1984

35

Study of the enthalpies of formation and crystallization in the system Zr-Ni

Henaff, M. P., Colinet, C., Pasturel, A., Buschow, K. H. J.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 640 KB

english, 1984

36

Flat-band voltage and surface states in amorphous silicon-based alloy field-effect transistors

Shur, M. S., Hack, M., Hyun, C.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 612 KB

english, 1984

37

Investigation of diffusion length and lifetime in lead chalcogenides by electron-beam-induced-current measurements at low temperatures

Eisenbeiss, A., Heinrich, H., Jakubowicz, A., Maurer, W., Palmetshofer, L., Preier, H. M., Bachem, K. H., Böttner, H.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 731 KB

english, 1984

38

Mechanisms of damage recovery in ion implanted SiO2

Devine, R. A. B.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 508 KB

english, 1984

39

A study of the initial growth kinetics of the copper-aluminum thin-film interface reaction by in situ x-ray diffraction and Rutherford backscattering analysis

Hamm, R. A., Vandenberg, J. M.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 801 KB

english, 1984

40

Theory of eddy currents induced by a nonsymmetric coil above a conducting half-space

Beissner, R. E., Sablik, M. J.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 687 KB

english, 1984

41

ac field effect in amorphous silicon

Srivastava, A. K., Narasimhan, K. L., Bapat, D. R.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 447 KB

english, 1984

42

Static and nonequilibrium transient conductance at strong carrier freeze-out in a buried channel, metal-oxide-semiconductor transistor

Tewksbury, S. K., Biazzo, M. R., Harrison, T. R., Lindstrom, T. L., Tennant, D. M., Storz, F. G.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 687 KB

english, 1984

43

Current-controlled nonequilibrium processes in semiconductors

Manifacier, J.-C., Moreau, Y., Henisch, H. K.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 603 KB

english, 1984

44

Transport properties of multilayered Cr/SiOx thin films

Tanielian, M. H., Willhite, J. R., Niarchos, D.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 591 KB

english, 1984

45

Electron-beam irradiation enhanced dislocation glide in GaAs observed by transmission electron microscopy

Maeda, K., Suzuki, K., Ichihara, M., Takeuchi, S.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 484 KB

english, 1984

46

Cathodoluminescence emission from LiNbO3 single crystals

Llopis, J., Ballesteros, C., González, R., Chen, Y.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 561 KB

english, 1984

47

Solar cell junction profiles in ion-implanted texture-etched surfaces

Keavney, C. J., Spitzer, M. B.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 395 KB

english, 1984

48

Compressibilities and high-pressure phase transitions of sodium tungstate perovskites (NaxWO3)

Hazen, R. M., Finger, L. W.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 480 KB

english, 1984

49

Grain-driven zone melting

Anthony, Thomas R.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 919 KB

english, 1984

50

Selenium self-diffusion study in the 1-3-62 semiconductor: CuInSe2

von Bardeleben, H. J.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 683 KB

english, 1984

51

Calculation of the threshold voltage of metal-oxide-semiconductor field-effect transistors with Pearson-IV channel doping profile

Kwong, D. L., Meyers, D. C.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 531 KB

english, 1984