Volume 56; Issue 6

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Journal of Applied Physics
Volume 56; Issue 6

Journal of Applied Physics

Volume 56; Issue 6

1

A magnetostatic wave model for domain‐wall collective excitations

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 571 KB

english, 1984

2

Modeling of electrical response for semiconducting ferrite

Cheng, Hsiu‐Fung

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 764 KB

english, 1984

3

Trapping and surface recombination of ion‐implanted deuterium in stainless steel

Myers, S. M., Wampler, W. R., Besenbacher, F.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 1.29 MB

english, 1984

4

Ion-beam and laser mixing of nickel overlayers on silicon carbide

Narayan, J., Fathy, D., Holland, O. W., Appleton, B. R., Davis, R. F., Becher, P. F.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 631 KB

english, 1984

5

Growth of Sr1âxBaxF2 films on InAs by molecular beam epitaxy

Sugiyama, Koichi

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 717 KB

english, 1984

6

A study of hydrogenated amorphous silicon deposited by rf glow discharge in silane-hydrogen mixtures

Vanier, P. E., Kampas, F. J., Corderman, R. R., Rajeswaran, G.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 1.01 MB

english, 1984

7

Electrical, thermoelectric, and optical properties of strongly degenerate polycrystalline silicon films

Jones, R. E., Wesolowski, S. P.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 724 KB

english, 1984

8

Structure and dielectric properties of amorphous LiNbO3 thin films prepared by a sputtering deposition

Kitabatake, Makoto, Mitsuyu, Tsuneo, Wasa, Kiyotaka

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 526 KB

english, 1984

9

Improvements in the determination of interface state density using deep level transient spectroscopy

Eades, Wendell D., Swanson, Richard M.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 775 KB

english, 1984

10

Electroluminescence from LiInSe2-GaP heterodiodes

K. Kuriyama, Y. Igarashi

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 312 KB

english, 1984

11

The range of light ions in polymeric resists

Adesida, Ilesanmi, Karapiperis, Leonidas

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 641 KB

english, 1984

12

Vibrational properties of HgCdTe system

Talwar, D. N., Vandevyver, M.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 772 KB

english, 1984

13

Surface studies of epitaxial β-SiC on Si(100)

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 782 KB

english, 1984

14

Dynamics of laser stimulated etching of germanium by bromine

Davis, Glenn P., Moore, Cameron A., Gottscho, Richard A.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 659 KB

english, 1984

15

Direct measurement of the maximum depth phase change of crystal silicon under pulsed laser irradiation

Toulemonde, M., Heddache, R., Nielsen, F., Siffert, P.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 467 KB

english, 1984

16

Inhomogeneity of liquid-phase-epitaxial InGaAsP lattice matched on InP: Effects of transient growth

Brunemeier, P. E., Roth, T. J., Holonyak, N., Stillman, G. E.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 1.17 MB

english, 1984

17

Ultrasonic attenuation in p-type GaSb

Sakurai, Hiromi, Yamanaka, Fusao, Yoshida, Kohichi, Ohshima, Naoto, Suzuki, Katsuo

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 470 KB

english, 1984

18

Laser-induced resonant carrier lifetimes in n-InSb

McClure, S. W., Seiler, D. G., Littler, C. L.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 463 KB

english, 1984

19

Collection efficiency and short circuit current in polycrystalline solar cells

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 406 KB

english, 1984

20

Ferrimagnetic echoes of magnetostatic surface wave modes in ferrite films

Bucholtz, F., Webb, D. C., Young, C. W.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 848 KB

english, 1984

21

Be-implanted In0.53Ga0.47As diodes with ideal forward current-voltage characteristics

Zemel, A., Tell, B., Leheny, R. F., Harrison, T., Bridges, T. J., Burkhardt, E. G., Liao, A. S. H., Beebe, E. D.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 429 KB

english, 1984

22

The connection between carrier lifetime and doping density in nondegenerate semiconductors

Landsberg, Peter T., Kousik, Ganesh S.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 615 KB

english, 1984

23

Influence of ambient media on the out-diffusion of S from InP:S

Dutt, B. V., Chin, A. K., Camlibel, I., Bonner, W. A.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 669 KB

english, 1984

24

Reflectance of AlAs-GaAs and In0.28Ga0.72As-GaAs superlattices

Laidig, W. D., Blanks, D. K., Schetzina, J. F.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 675 KB

english, 1984

25

A characteristic study of the superconducting phase in the niobium-aluminum-germanium system

Kannatey-Asibu, E.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 712 KB

english, 1984

26

Oxygen-related thermal donors in silicon: A new structural and kinetic model

Ourmazd, A., Schröter, W., Bourret, A.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 1.26 MB

english, 1984

27

Compressibility of zeolite 4A is dependent on the molecular size of the hydrostatic pressure medium

Hazen, R. M., Finger, L. W.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 459 KB

english, 1984

28

Rapid thermal annealing of modulation-doped AlxGa1−xAs/GaAs heterostructures for device applications

Pearah, P., Henderson, T., Klem, J., Morkoç, H., Nilsson, B., Wu, O., Swanson, A. W., Ch’en, D. R.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 642 KB

english, 1984

29

Phase transformation and impurity redistribution during pulsed laser irradiation of amorphous silicon layers

Narayan, J., White, C. W., Holland, O. W., Aziz, M. J.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 1.03 MB

english, 1984

30

Theory of defect scattering in two-dimensional multisubband electronic systems on III-V compound semiconductors

Yamaguchi, Eiichi

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 665 KB

english, 1984

31

Negative electron affinity gallium arsenide photocathode grown by molecular beam epitaxy

Narayanan, A. A., Fisher, D. G., Erickson, L. P., O’Clock, G. D.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 376 KB

english, 1984

32

Probe penetration in spreading resistance measurements

Vandervorst, W. B., Maes, H. E.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 908 KB

english, 1984

33

Variation in the diode quality factor with the insulator layer thickness for a metal-insulator-n-semiconductor solar cell

Goel, Anju, Sharma, T. P.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 369 KB

english, 1984

34

Schottky contact barrier height modification by ion implantation of Al into GaAs

Aina, O., Pande, K. P.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 683 KB

english, 1984

35

Influence of clustering on the mobility of III-V semiconductor alloys

Blood, P., Grassie, A. D. C.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 528 KB

english, 1984

36

Silicon oxynitride films prepared by plasma nitridation of silicon and their application for tunnel metal-insulator-silicon diodes

Hezel, R., Meisel, T., Streb, W.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 761 KB

english, 1984

37

Anodic oxidation of AlxGa1−xAs

Yu, Jinzhong, Aoyagi, Yoshinobu, Iwai, Sohachi, Toyoda, Koichi, Namba, Susumu

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 409 KB

english, 1984

38

Figure of merit and spatial resolution of superconducting flux transformers

Duret, D., Karp, P.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 742 KB

english, 1984

39

Irreversible and reversible annealing of paramagnetic oxygen vacancies (Eʹ1 centers) in oxygen-implanted amorphous SiO2

Golanski, A., Devine, R. A. B., Oberlin, J. C.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 689 KB

english, 1984

40

The dynamics of photoexcited carriers in microcrystalline silicon

Komuro, Shuji, Aoyagi, Yoshinobu, Segawa, Yusaburo, Namba, Susumu, Masuyama, Akio, Matsuda, Akihisa, Tanaka, Kazunobu

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 675 KB

english, 1984

41

Erratum: Some effects of elastic stresses and demagnetizing fields on nickel samples [J. Appl. Phys. 54, 6558 (1983)]

Bordin, G., Cecchi, G. C., Montanari, T.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 283 KB

english, 1984

42

Enhanced diffusion and precipitation of iron in gold-doped polycrystalline silicon

Miremadi, Bijan K., Morrison, S. Roy

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 650 KB

english, 1984

43

Epitaxial growth of lattice-matched CaxSr1−xF2 on (100) and (110) GaAs substrates

Siskos, S., Fontaine, C., Munoz-Yague, A.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 690 KB

english, 1984

44

Bias-temperature stress on metal-oxide-semiconductor structures as compared to ionizing irradiation and tunnel injection

Haller, G., Knoll, M., Bräunig, D., Wulf, F., Fahrner, W. R.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 764 KB

english, 1984

45

Electron tunneling in heavily In-doped polycrystalline CdS films

Garcia-Cuenca, M. V., Morenza, J. L., Esteve, J.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 656 KB

english, 1984

46

A new model for the growth of silicon dioxide layers

Lu, Y. Z., Cheng, Y. C.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 614 KB

english, 1984

47

Local bonding arrangements of boron in doped hydrogenated amorphous silicon

Greenbaum, S. G., Carlos, W. E., Taylor, P. C.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 551 KB

english, 1984

48

Photoconductivity of CdS powders by microwave loss measurement

Dierssen, G. H., Sahyun, M. R. V.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 917 KB

english, 1984

49

On the weak-field magnetoresistance of holes in Ge and Si

Nakagawa, Hidemoto, Zukotynski, Stefan, Reggiani, Lino

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 813 KB

english, 1984

50

An atom-probe field-ion microscope study of 200-eV 1H+2 ions implanted in tungsten at 29 K

Macrander, Albert T., Seidman, David N.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 827 KB

english, 1984

51

Effects of blocking contacts on generation-recombination noise and responsivity in intrinsic photoconductors

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 824 KB

english, 1984

52

Density of states at the interface between semi-insulating polycrystalline and single crystal silicon

Taylor, D. M., Tong, D. W.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 486 KB

english, 1984

53

Hydrogen dissolution in palladium: A resistometric study under pressure

Magnouche, A., Fromageau, R.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 615 KB

english, 1984

54

Hardness anisotropy of III-V semiconducting compounds and alloys

Watts, D. Y., Willoughby, A. F. W.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 393 KB

english, 1984