Volume 60; Issue 3

Main
Journal of Applied Physics
Volume 60; Issue 3

Journal of Applied Physics

Volume 60; Issue 3

1

Manganese absorption in CaF2:Mn; I

McKeever, S. W. S., Jassemnejad, B., Landreth, J. F., Brown, M. D.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 848 KB

english, 1986

2

Method of solution of a three‐temperature plasma model and its application to inertial confinement fusion target design studies

Tahir, N. A., Long, K. A., Laing, E. W.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 671 KB

english, 1986

3

Collection efficiency and crosstalk in closely spaced photodiode arrays

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 636 KB

english, 1986

4

Optical properties of amorphous silicon and silicon dioxide

Ravindra, N. M., Narayan, J.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 826 KB

english, 1986

5

Determination of bulk minority-carrier lifetime and surface/interface recombination velocity from photoluminescence decay of a semi-infinite semiconductor slab

ât Hooft, G. W., van Opdorp, C.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 723 KB

english, 1986

6

Inversion criteria for the metal-insulator-semiconductor tunnel structures

Wang, S. J., Fang, B. C., Tzeng, F. C., Chen, C. T., Chang, C. Y.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 786 KB

english, 1986

7

Se-related deep levels in InGaAlP

Watanabe, Miyoko O., Ohba, Yasuo

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 628 KB

english, 1986

8

A fracture mechanics model of fragmentation

Glenn, L. A., Gommerstadt, B. Y., Chudnovsky, A.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 492 KB

english, 1986

9

Onset of instability in a pulsed, low-pressure, high-current hydrogen discharge

Penetrante, B. M., Kunhardt, E. E.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 477 KB

english, 1986

10

Effect of pressure on the Raman modes in LiNbO3 and LiTaO3

Jayaraman, A., Ballman, A. A.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 533 KB

english, 1986

11

Discharge constriction, photodetachment, and ionization instabilities in electron-beam-sustained discharge excimer lasers

Kushner, M. J., Pindroh, A. L.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 1.18 MB

english, 1986

12

Resistivity of a composite conducting polymer as a function of temperature, pressure, and environment: Applications as a pressure and gas concentration transducer

Lundberg, B., Sundqvist, B.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 708 KB

english, 1986

13

Self-consistent domain theory in soft-ferromagnetic media. II. Basic domain structures in thin-film objects

van den Berg, H. A. M.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 1.06 MB

english, 1986

14

Generalized Norde plot including determination of the ideality factor

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 309 KB

english, 1986

15

Atomic layer epitaxy

Goodman, Colin H. L., Pessa, Markus V.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 1.68 MB

english, 1986

16

Field-enhanced conductivity in semi-insulating GaAs

Pistoulet, B., Abdalla, S.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 592 KB

english, 1986

17

Identification of hydrogen platelets in proton-bombarded GaAs

Neethling, J. H., Snyman, H. C.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 665 KB

english, 1986

18

Photo Hall-effect characterization of closely compensated Ge:Be

Germer, Thomas A., Haegel, Nancy M., Haller, Eugene E.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 579 KB

english, 1986

19

Capture-emission process in double Poole–Frenkel well traps: Theory and experiments

Chang, C. Y., Hsu, W. C., Wang, S. J., Hau, S. S.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 554 KB

english, 1986

20

Improvements in high-field superconducting performance of V3Ga by a two-stage reaction process

Takeuchi, T., Iijima, Y., Inoue, K., Tachikawa, K.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 488 KB

english, 1986

21

Theory of response of radiation sensing field-effect transistors in zero-bias operation

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 404 KB

english, 1986

22

A dislocation model relating apparent charge density to lattice mismatch in epitaxial InGaAs/InP

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 490 KB

english, 1986

23

Energy balance in a nonequilibrium weakly ionized nitrogen discharge

Boeuf, J. P., Kunhardt, E. E.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 890 KB

english, 1986

24

Measurement of SF6 ions with a Gerdien ion counter

Novak, J. P., Ellena, G., Nguyen, D. H.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 1.03 MB

english, 1986

25

Effects of dislocations on axial channeling radiation from positrons

Pathak, Anand P., Balagari, Prasanna K. John

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 541 KB

english, 1986

26

Microstructure of ion-bombarded Fe–Ti and Fe–Ti–C multilayered films

Hirvonen, J-P., Nastasi, M., Mayer, J. W.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 636 KB

english, 1986

27

Interfacial reactions between Ni films and GaAs

Lahav, A., Eizenberg, M., Komem, Y.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 1.22 MB

english, 1986

28

Effects of fluorine implantation on the kinetics of dry oxidation of silicon

Kuper, F. G., De Hosson, J. Th. M., Verwey, J. F.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 614 KB

english, 1986

29

Sputtered amorphous Fe–Te films: Structural and electrical studies

Chiba, Kiyoshi, Tokumitsu, Kazuto, Ino, Hiromitsu

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 737 KB

english, 1986

30

Zinc-implantation-disordered (InGa)As/GaAs strained-layer superlattice diodes

Myers, D. R., Arnold, G. W., Zipperian, T. E., Dawson, L. R., Biefeld, R. M., Fritz, I. J., Barnes, C. E.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 613 KB

english, 1986

31

Be+/O+-ion implantation in GaAs–AlGaAs heterojunctions

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 702 KB

english, 1986

32

Conditions for uniform growth of GaAs1−xPx superlattices

Blakeslee, A. E., Kibbler, A., Wanlass, M. W., Biefeld, R. M.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 548 KB

english, 1986

33

Activation energy for electromigration failure in Al–Cu conductor stripes covered with polyimide

Lloyd, J. R., Steagall, R. N.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 419 KB

english, 1986

34

Analytic Green’s dyads for an electrically conducting half-space

Beissner, R. E.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 509 KB

english, 1986

35

Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca,Sr)F2

Landa, G., Carles, R., Renucci, J. B., Fontaine, C., Bedel, E., Muñoz-Yague, A.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 742 KB

english, 1986

36

Characterization and entrainment of subboundaries and defect trails in zone-melting-recrystallized Si films

Geis, M. W., Smith, Henry I., Chen, C. K.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 1.10 MB

english, 1986

37

A note on the analysis of space-charge-limited current data

Jarman, Richard H.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 412 KB

english, 1986

38

Electroreflectance study of Hg1−xMnxTe in the E1 and E1+Δ1 energy regions

Wrobel, J. M., Bassett, L. C., Aubel, J. L., Sundaram, S., Becla, P.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 520 KB

english, 1986

39

Effects of impurities on radiation damage in InP

Yamaguchi, Masafumi, Ando, Koushi

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 704 KB

english, 1986

40

The influence of growth conditions on sulfur and selenium incorporation in Ga1−xAlxAs grown by molecular-beam epitaxy

Andrews, D. A., Heckingbottom, R., Davies, G. J.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 732 KB

english, 1986

41

Applied-B ion diode experiments on the Particle Beam Fusion Accelerator-I

Dreike, P. L., Burns, E. J. T., Slutz, S. A., Crow, J. T., Johnson, D. J., Johnson, P. R., Leeper, R. J., Miller, P. A., Mix, L. P., Seidel, D. B., Wenger, D. F.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 2.17 MB

english, 1986

42

Self-biased Josephson junctions

Hyun, O. B., Finnemore, D. K.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 519 KB

english, 1986

43

Magnetization buckling in a prolate spheroid

Aharoni, Amikam

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 730 KB

english, 1986

44

In situ ion implantation for quantitative secondary ion and sputtered neutral mass spectrometry analysis

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 552 KB

english, 1986

45

Observation of strain effects and evidence of gallium autodoping in molecular-beam-epitaxial ZnSe on (100)GaAs

Mar, H. A., Park, R. M.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 589 KB

english, 1986

46

Spatially resolved ellipsometry

Erman, M., Theeten, J. B.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 1.34 MB

english, 1986

47

Preparation of amorphous Ti1−xCux (0.10

Politis, C., Johnson, W. L.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 649 KB

english, 1986

48

Influencing factors and calculation of residual currents for modified metal-oxide-semiconductor devices covered with various silicone elastomers

Yokoyama, Takashi, Kinjo, Noriyuki, Wakashima, Yoshiaki

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 556 KB

english, 1986

49

Numerical calculations of director patterns in highly twisted nematic configurations with nonzero pretilt angles

van Sprang, H. A., Breddels, P. A.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 619 KB

english, 1986

50

Interactions of four metallic compounds with Si substrates

Hung, L. S., Mayer, J. W.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 841 KB

english, 1986

51

Determination of the chain segment lengths involved in γ relaxation of low-density polyethylene by thermostimulated depolarization measurements

Audren, P., Ronarc’h, D.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 882 KB

english, 1986

52

The computation of transmission electron microscope image profiles for dislocation loops in GaAs

Ardren, S. P., Ball, C. A. B., Neethling, J. H., Snyman, H. C.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 495 KB

english, 1986

53

Experimental and theoretical studies of nuclear generation of ozone from oxygen and oxygen–sulfur hexafluoride mixtures

Elsayed-Ali, H. E., Miley, G. H.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 1.60 MB

english, 1986

54

Planar and residual channeling of Si+ implants in GaAs

Blunt, R. T., Davies, P.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 532 KB

english, 1986

55

Changes of the principal directions of electrical resistivity caused by a magnetic field

Kyriakos, D. S.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 462 KB

english, 1986

56

Structural changes produced in silicon by intense 1-μm ps pulses

Smirl, Arthur L., Boyd, Ian W., Boggess, Thomas F., Moss, Steven C., van Driel, Henry M.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 1.73 MB

english, 1986

57

Structural and magnetic properties of R2Fe14−xTxB (R=Nd, Y; T=Cr, Mn, Co, Ni, Al)

Abache, C., Oesterreicher, H.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 563 KB

english, 1986

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