Volume 61; Issue 9

Journal of Applied Physics

Volume 61; Issue 9
1

Electron‐trap generation by recombination of electrons and holes in SiO2

Year:
1987
Language:
english
File:
PDF, 754 KB
english, 1987
2

Isotope separation in a vacuum‐arc centrifuge

Year:
1987
Language:
english
File:
PDF, 1010 KB
english, 1987
3

Time-resolved spectroscopy of Zn- and Cd-doped GaN

Year:
1987
Language:
english
File:
PDF, 750 KB
english, 1987
5

Optical self-regulation during laser-induced oxidation of copper

Year:
1987
Language:
english
File:
PDF, 1.76 MB
english, 1987
7

Equilibria of a rigidly rotating, fully ionized plasma column

Year:
1987
Language:
english
File:
PDF, 561 KB
english, 1987
8

An energy-dependent electron backscattering coefficient

Year:
1987
Language:
english
File:
PDF, 903 KB
english, 1987
10

A unified theory of noise in nondegenerate semiconductors

Year:
1987
Language:
english
File:
PDF, 1.79 MB
english, 1987
12

Optical absorption in TiNxOy-compounds

Year:
1987
Language:
english
File:
PDF, 880 KB
english, 1987
15

Annealing effect for heavily Sn-implanted GaAs

Year:
1987
Language:
english
File:
PDF, 629 KB
english, 1987
17

Dopant redistribution at Si surfaces during vacuum anneal

Year:
1987
Language:
english
File:
PDF, 1000 KB
english, 1987
21

A local measurement of Ba+ density temporal evolution

Year:
1987
Language:
english
File:
PDF, 591 KB
english, 1987
24

Electrical characterization of cw xenon arcs at moderate currents

Year:
1987
Language:
english
File:
PDF, 1.03 MB
english, 1987
27

Photoluminescence study of heat-treated InP

Year:
1987
Language:
english
File:
PDF, 809 KB
english, 1987
29

Role of oxygen in defect-related breakdown in thin SiO2 films on Si (100)

Year:
1987
Language:
english
File:
PDF, 647 KB
english, 1987
34

Amorphous carbon coating on amorphous silicon photoreceptors

Year:
1987
Language:
english
File:
PDF, 608 KB
english, 1987
37

A design criterion to ameliorate ohmic contact to n-GaAs

Year:
1987
Language:
english
File:
PDF, 578 KB
english, 1987