Volume 105; Issue 1-4

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Journal of Crystal Growth
Volume 105; Issue 1-4

Journal of Crystal Growth

Volume 105; Issue 1-4

1

Editorial board

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 121 KB

english, 1990

2

Progress in chemical beam epitaxy

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 2.39 MB

english, 1990

3

Recent progress in MOVPE for HEMT LSIs

J. Komeno, H. Tanaka, N. Tomesakai, H. Itoh, T. Ohori, M. Takikawa, M. Suzuki, K. Kasai

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 396 KB

english, 1990

4

High throughput vacuum chemical epitaxy

L.M. Fraas, E. Malocsay, V. Sundaram, R.W. Baird, B.Y. Mao, G.Y. Lee

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 907 KB

english, 1990

5

Gas source Si-MBE

Hiroyuki Hirayama, Masayuki Hiroi, Kazuhisa Koyama, Toru Tatsumi

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 516 KB

english, 1990

6

Modulated-beam mass spectrometry studies of the MOMBE growth of (100) GaAs and In0.1Ga0.9As

T. Martin, C.R. Whitehouse

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 904 KB

english, 1990

7

Observations on RHEED intensity oscillations during the growth of GaSb and InAs by MOMBE

Tadaaki Kaneko, Hajime Asahi, Yasutoshi Okuno, Tae Won Kang, Shun-ichi Gonda

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 720 KB

english, 1990

8

Mass spectrometric study of the reaction of trimethylgallium and GaAs

Y. Ohki, Y. Hiratani

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 337 KB

english, 1990

9

Modulated molecular beam and RHEED studies of MBE and MOMBE growth

E.M. Gibson, C.T. Foxon, J. Zhang, B.A. Joyce

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 454 KB

english, 1990

10

Optoelectronic devices by GSMBE

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 268 KB

english, 1990

11

High-purity InP grown by gas source molecular beam epitaxy (GSMBE)

M. Lambert, A. Péralès, R. Vergnaud, C. Starck

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 439 KB

english, 1990

12

Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy

H. Asonen, K. Rakennus, K. Tappura, M. Hovinen, M. Pessa

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 396 KB

english, 1990

13

Diffusion limited δ-doping profiles in GaAs grown by gas source molecular beam epitaxy

J.E. Cunningham, T.H. Chiu, A. Ourmazd, W. Jan, T.Y. Kuo

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 408 KB

english, 1990

14

Study of AlInP and GaInP grown by gas source molecular beam epitaxy (GSMBE)

Masato Nakajima, Akira Takamori, Tatsuo Yokotsuka, Kiyoshi Uchiyama, Tomoko Abe

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 756 KB

english, 1990

15

Chemical beam epitaxy of indium phosphide

J.L. Benchimol, F. Alaoui, Y. Gao, G. Le Roux, E.V.K. Rao, F. Alexandre

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 590 KB

english, 1990

16

Growth of high purity InP by metalorganic MBE (CBE)

H. Heinecke, B. Baur, R. Höger, A. Miklis

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 455 KB

english, 1990

17

GaAs/AlGaAs quantum well structures grown by gas-source MBE using TEG, TEA, and AsH3

H. Ando, A. Sandhu, H. Ishikawa, T. Fujii

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 457 KB

english, 1990

18

Atomic layer epitaxy of GaAs by chemical beam epitaxy

T.H. Chiu, J.E. Cunningham, A. Robertson Jr., D.L. Malm

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 494 KB

english, 1990

19

Carbon incorporation in AlGaAs grown by CBE

B.J. Lee, Y.M. Houng, J.N. Miller, J.E. Turner

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 709 KB

english, 1990

20

In situ XPS characterization of triethylgallium exposed GaAs and AlAs surfaces

Takeshi Maeda, Junji Saito, Kazuo Kondo

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 365 KB

english, 1990

21

The effects of arsenic overpressure in metalorganic molecular beam epitaxy of GaAs and InAs

C.W. Tu, B.W. Liang, T.P. Chin

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 345 KB

english, 1990

22

Surface studies of the thermal decomposition of triethylgallium on GaAs (100)

A.J. Murrell, A.T.S. Wee, D.H. Fairbrother, N.K. Singh, J.S. Foord, G.J. Davies, D.A. Andrews

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 323 KB

english, 1990

23

Growth kinetics in silane gas-source molecular beam epitaxy

Maki Suemitsu, Fumihiko Hirose, Yuji Takakuwa, Nobuo Miyamoto

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 566 KB

english, 1990

24

Anomalous temperature dependence of growth rate of GaAs grown by trimethylgallium and arsine molecular beams and two competing growth mechanisms

Toshiro Isu, Masayuki Hata, Akiyoshi Watanabe

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 342 KB

english, 1990

25

Studies of TMGa adsorption on thin GaAs and InAs (001) layers

B.Y. Maa, P.D. Dapkus

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 630 KB

english, 1990

26

The effect of growth pause on the composition of InGaP/GaAs Heterointerfaces

H.Y. Lee, M.J. Hafich, G.Y. Robinson

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 366 KB

english, 1990

27

InGaAs/InP quantum well wires fabricated by GSMBE, MOCVD, and selective chemical etching techniques

M. Naganuma, M. Notomi, H. Iwamura, M. Okamoto, T. Nishida

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 482 KB

english, 1990

28

Alternate sources and growth chemistry for OMVPE and CBE processes

G.B. Stringfellow

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 974 KB

english, 1990

29

Substituted arsines as As sources in MOMBE

J. Musolf, M. Weyers, P. Balk, M. Zimmer, H. Hofmann

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 362 KB

english, 1990

30

Monoethylarsine as a novel replacement for arsine in the vapor deposition of GaAs

D.M. Speckman, J.P. Wendt

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 639 KB

english, 1990

31

A gas handling system for MOMBE growth

S.D. Hersee, J.M. Ballingall

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 517 KB

english, 1990

32

Progress in the design of CBE systems

V.J. Mifsud, P.W. Sullivan, D. Williams

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 756 KB

english, 1990

33

An integrated safety system for CBE

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 520 KB

english, 1990

34

Reflectance-difference detection of growth oscillations

G. Paulsson, K. Deppert, S. Jeppesen, J. Jönsson, L. Samuelson, P. Schmidt

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 295 KB

english, 1990

35

Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy

M.J. McCollum, S.L. Jackson, I. Szafranek, G.E. Stillman

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 824 KB

english, 1990

36

Mg incorporation process during LP-MOVPE of InP, GaInAs and GaInAsP

E. Veuhoff, H. Baumeister, O. Brandt, R. Treichler

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 542 KB

english, 1990

37

Extremely high Be doped Ga0.47In0.53As growth by chemical beam epitaxy

T.K. Uchida, T. Uchida, K. Mise, F. Koyama, K. Iga

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 484 KB

english, 1990

38

Carbon doping of III–V compounds grown by MOMBE

C.R. Abernathy, S.J. Pearton, F. Ren, W.S. Hobson, T.R. Fullowan, A. Katz, A.S. Jordan, J. Kovalchick

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 737 KB

english, 1990

39

Preface

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 86 KB

english, 1990

40

Laser assisted chemical beam epitaxy

K. Nagata, Y. Iimura, Y. Aoyagi, S. Namba

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 424 KB

english, 1990

41

Understanding growth mechanisms using metalorganic sources

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 625 KB

english, 1990

42

Growth and silicon doping of AlxGa1−xP on GaP by gas source molecular beam epitaxy

J.N. Baillargeon, K.Y. Cheng, K.C. Hsieh, C.L. Wei

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 436 KB

english, 1990

43

CBE growth of AlGaAs/GaAs heterostructures and their device applications

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 958 KB

english, 1990

44

Monolithically integrated InGaAs/InP MSM-FET photo-receiver prepared by chemical beam epitaxy

L. Yang, A.S. Sudbo, W.T. Tsang, P.A. Garbinski, R.M. Camarda

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 491 KB

english, 1990

45

MOMBE of InAs on GaAs

M. Kamp, M. Weyers, H. Heinecke, H. Lüth, P. Balk

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 466 KB

english, 1990

46

Surface diffusion lengths of Ga molecules during GaAs MOMBE (metalorganic molecular beam epitaxy) growth

Yasutoshi Okuno, Hajime Asahi, Tadaaki Kaneko, Tae Won Kang, Shun-ichi Gonda

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 471 KB

english, 1990

47

Transient behavior in RHEED intensity oscillations observed in chemical beam epitaxy of InP

Yoshitaka Morishita, Masayuki Imaizumi, Mitsunobu Gotoda, Shigemitsu Maruno, Yoshinori Nomura, Hitoshi Ogata

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 451 KB

english, 1990

48

A RHEED and XPS study of InxGa1−xAs on GaAs grown by chemical beam epitaxy

A. Bensaoula, H. Hansen, H.C. Chen, J.T. Zborowski, K.D. Jamison, A. Ignatiev, H.D. Shih, Y.K. Tao

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 238 KB

english, 1990

49

Surface segregation of indium during growth of InGaAs in chemical beam epitaxy

Y. Iimura, K. Nagata, Y. Aoyagi, S. Namba

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 327 KB

english, 1990

50

Epitaxial growth of lattice matched metallic ErP0.6As0.4 on (001) and (111) GaAs with a GSMBE system

A. Le Corre, B. Guenais, A. Guivarc'h, D. Lecrosnier, J. Caulet, M. Minier, G. Ropars, P.A. Badoz, J.Y. Duboz

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 486 KB

english, 1990

51

A study of metalorganic molecular beam epitaxy growth of InAs by mass spectrometry and reflection high-energy electron diffraction

B.W. Liang, T.P. Chin, L.Y. Wang, C.W. Tu

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 341 KB

english, 1990

52

The growth of InP/InGaAs multi-quantum well modulator arrays by gas source MBE

E.G. Scott, M.H. Lyons, M.A.Z. Rejman-Greene, G.J. Davies

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 351 KB

english, 1990

53

A compact VCE growth system for in situ studies of epitaxy

P. Schmidt, K. Deppert, S. Jeppesen, J. Jönsson, G. Paulsson, L. Samuelson

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 474 KB

english, 1990

54

Growth process of III–V compound semiconductors by migration-enhanced epitaxy

Yoshiji Horikoshi, Hiroshi Yamaguchi, Fernando Briones, Minoru Kawashima

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1.26 MB

english, 1990

55

Improved 1.5 μm wavelength lasers using high quality LP-OMVPE grown strained-layer InGaAs quantum wells

P.J.A. Thijs, E.A. Montie, T. van Dongen, C.W.T. Bulle-Lieuwma

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 876 KB

english, 1990

56

Macroscopic mechanism of group V interdiffusion in undoped InGaAs/InP quantum wells grown by MOVPE

Takuya Fujii, Mitsuru Sugawara, Susumu Yamazaki, Kazuo Nakajima

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 376 KB

english, 1990

57

Metallic p-type GaAs and InGaAs grown by MOMBE

Makoto Konagai, Takumi Yamada, Takeshi Akatsuka, Shinji Nozaki, Ryuji Miyake, Koki Saito, Taichi Fukamachi, Eisuke Tokumitsu, Kiyoshi Takahashi

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 484 KB

english, 1990

58

Anomalous silicon and tin doping behaviour in indium phosphide grown by chemical beam epitaxy

P.J. Skevington, D.A. Andrews, G.J. Davies

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 339 KB

english, 1990

59

Gaseous dopant sources in MOMBE/CBE

M. Weyers, J. Musolf, D. Marx, A. Kohl, P. Balk

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 787 KB

english, 1990

60

Author index

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 339 KB

english, 1990

61

Subject index

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 111 KB

english, 1990

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