Volume 173; Issue 3-4

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Journal of Crystal Growth
Volume 173; Issue 3-4

Journal of Crystal Growth

Volume 173; Issue 3-4

1

Influence of step motion on hillock formation in CdTe(100) grown on GaAs(100) by metalorganic vapor phase epitaxy

Hironori Nishino, Yoshito Nishijima

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 430 KB

english, 1997

2

Melt convection effects on the critical velocity of particle engulfment

S. Sen, B.K. Dhindaw, D.M. Stefanescu, A. Catalina, P.A. Curreri

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 749 KB

english, 1997

3

Electrical activation of carbon δ-doped (Al,Ga)As grown by metalorganic vapour-phase epitaxy

G. Li, M. Petravić, C. Jagadish

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 366 KB

english, 1997

4

Magnetic orientation as a tool to study the initial stage of crystallization of lysozyme

Mitsuo Ataka, Eriko Katoh, Nobuko I. Wakayama

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 246 KB

english, 1997

5

Stoichiometric defects in semi-insulating GaAs

NuoFu Chen, Hongjia He, Yutian Wang, Lanying Lin

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 358 KB

english, 1997

6

Arsenic surface segregation and incorporation in Si and Si1 − xGex during gas source molecular beam epitaxy

M.-H Xie, A.K. Lees, J.M. Fernandez, J. Zhang, B.A. Joyce

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 468 KB

english, 1997

7

In situ observations of stress-induced defect formation at the solid—liquid interface

L.M. Fabietti, R. Trivedi

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 611 KB

english, 1997

8

Numerical modeling of microsegregation in binary alloys

J.H. Kim, J.W. Park, C.H. Lee, E.P. Yoon

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 784 KB

english, 1997

9

Removal of oxygen from electronic materials by vapor-phase processes

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 869 KB

english, 1997

10

Magnetically damped convection and segregation in Bridgman growth of PbSnTe

Minwu Yao, Arnon Chait, Archibald L. Fripp, William J. Debnam

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 982 KB

english, 1997

11

Growth kinetic study of potassium niobate single crystal: a new method for high time-resolution kinetic data of ABO3-type materials

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 699 KB

english, 1997

12

Surface preparation for molecular beam epitaxy-regrowth on metalorganic vapour phase epitaxy grown InP and InGaAsP layers

W. Passenberg, W. Schlaak

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 349 KB

english, 1997

13

LAP single crystal growth free of microorganisms by an accurately controlled solvent evaporation technique

J.F. Carvalho, A.C. Hernandes, F.D. Nunes, L.B.O.A. de Moraes, L. Misoguti, S.C. Zilio

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 323 KB

english, 1997

14

A numerical and experimental study of natural convection and interface shape in crystal growth

G.H. Yeoh, G. de Vahl Davis, E. Leonardi, H.C. de Groh III, M. Yao

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 749 KB

english, 1997

15

The effect of interface shape on anisotropic thermal stress of bulk single crystal during Czochralski growth

Tei-Chen Chen, Hsiang-Chi Wu, Cheng-I Weng

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 894 KB

english, 1997

16

Morphological features of diamond films grown on diamond-like carbon films synthesized from polymer by chemical vapor deposition

Z. Sun, X. Shi, B.K. Tay, D. Flynn, X. Wang, Z. Zheng, Y. Sun

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 387 KB

english, 1997

17

Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition

Shuwei Li, Yixin Jin, Chunxiao Gao, Zengsun Jin

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 299 KB

english, 1997

18

Carbon doping in InAlAs grown by metalorganic chemical vapor deposition

Hiroshi Ito, Haruki Yokoyama

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 451 KB

english, 1997

19

Optical and structural properties of GaN films grown on c-plane Al2O3 by electron cyclotron resonance molecular beam epitaxy

Sung Hwan Cho, Kazutaka Hata, Takahiro Maruyama, Katsuhiro Akimoto

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 392 KB

english, 1997

20

The morphology of InPInGaAs grown by molecular beam epitaxy onto V-grooved InP substrates

J. Wang, B.J. Robinson, D.A. Thompson, J.G. Simmons

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 511 KB

english, 1997

21

Spiral growth of Bi2Sr2CaCu2Oy single crystals using KCl flux technique

X.L. Wang, J. Horvat, H.K. Liu, S.X. Dou

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 460 KB

english, 1997

22

Simultaneous growth of two different oriented GaN epilayers on (1 1 · 0) sapphire I. Morphology and orientation

Tomohisa Kato, Hitoshi Ohsato, Takashi Okuda, Patric Kung, Adam Saxler, Chien-Jen Sun, Manijeh Razeghi

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 427 KB

english, 1997

23

Analysis of silicon carbide growth by sublimation sandwich method

S.Yu. Karpov, Yu.N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, R.A. Talalaev, Yu.A. Vodakov

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 715 KB

english, 1997

24

Evaluation of thin Si films grown on Ge (1 0 0) by synchrotron-radiation-excited atomic layer epitaxy and chemical vapor deposition from Si2H6

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 529 KB

english, 1997

25

Plasma-excited organometallic vapor phase epitaxy of GaN on (0 0 0 1)sapphire

Takashi Tokuda, Akihiro Wakahara, Susumu Noda, Akio Sasaki

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 405 KB

english, 1997

26

Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0 0 0 1)

P. Vennegues, B. Beaumont, M. Vaille, P. Gibart

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 750 KB

english, 1997

27

Erratum to “Stagnant film model of the effect of natural convection on the dendrite operating state” [J. Crystal Growth 154 (1995) 370]

R.F. Sekerka, S.R. Coriell, G.B. McFadden

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 39 KB

english, 1997

28

Nanometer-scale selective-area GaAs growth on nitrogen-passivated surfaces using STM and MOMBE

Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 144 KB

english, 1997

29

Growth of high mobility InSb crystals

D.B. Gadkari, K.B. Lal, A.P. Shah, B.M. Arora

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 307 KB

english, 1997

30

Announcement

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 34 KB

english, 1997

31

Subject index

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 106 KB

english, 1997

32

Numerical simulation of CdTe vertical Bridgman growth

Hong Ouyang, Wei Shyy

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 889 KB

english, 1997

33

The crystallization of potassium nitrate I. Etch pit density and microhardness of potassium nitrate in comparison with some other ionic crystals

A. Herden, R. Lacmann

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 355 KB

english, 1997

34

Growth of shaped sapphire crystals using automated weight control

V.N. Kurlov, S.N. Rossolenko

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 693 KB

english, 1997

35

Crystal growth of PdCoO2, PtCoO2 and their solid-solution with delafossite structure

Masayuki Tanaka, Masashi Hasegawa, Humihiko Takei

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 379 KB

english, 1997

36

The growth defects in self-frequency-doubling laser crystal NdxY1 − xAl3(BO3)4

X.B. Hu, S.S. Jiang, X.R. Huang, W.J. Liu, C.Z. Ge, J.Y. Wang, H.F. Pan, J.H. Jiang, Z.G. Wang

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 477 KB

english, 1997

37

On the adhesion of In0.2Ga0.8Sb to quartz ampoule during synthesis

C. Marín, P.S. Dutta, E. Diéguez, P. Dusserre, T. Duffar

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 460 KB

english, 1997

38

Precipitate identification in Ti-doped YAlO3 single crystals

B. Cockayne, M.J. Crosbie, N.A. Smith, I.R. Harris

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 204 KB

english, 1997

39

Modeling of ellipsoid mirror furnace for floating-zone crystal growth

C.W. Lan, C.H. Tsai

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 919 KB

english, 1997

40

Structural characterization and surface lattice strain determination of ZnSGaAs heterostructures grown by metalorganic vapour phase epitaxy

G. Leo, L. Lazzarini, N. Lovergine, F. Romanato, A.V. Drigo

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 606 KB

english, 1997

41

GaSb crystals pulled from non-stoichiometric solution at constant temperature

Akira Tanaka, Akiyoshi Watanabe, Masakazu Kimura, Tokuzo Sukegawa

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 356 KB

english, 1997

42

High-temperature epitaxy of PtSiSi(0 0 1)

K.L. Kavanagh, M.C. Reuter, R.M. Tromp

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 651 KB

english, 1997

43

Equilibrium form of PbBiNi alloy crystals

Wei-Chun Cheng, Paul Wynblatt

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 1020 KB

english, 1997

44

Crystallization of aluminum alloys in the presence of vertical electromagnetic force fields

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 680 KB

english, 1997

45

Evaluation of a zero-discharge reactor for the chemical vapor deposition of mercury telluride

Wing kei Au, Menno J. Kappers, Robert F. Hicks

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 576 KB

english, 1997

46

Microstructures of dilute NiC alloys obtained from undercooled droplets

K. Eckler, A.F. Norman, F. Gärtner, A.L. Greer, D.M. Herlach

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 998 KB

english, 1997

47

Characterisation of the LPE grown InGaAsPInP hetero-structures: IR-LED at 1.66 μm used for the remote monitoring of methane gas

V.V. Volkov, J. Van Landuyt, K.M. Marushkin, R. Gijbels, C. Férauge, M.G. Vasilyev, A.A. Shelyakin, A.A. Sokolovsky

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 806 KB

english, 1997

48

Author index

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 415 KB

english, 1997

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