Volume 196; Issue 1

Journal of Crystal Growth

Volume 196; Issue 1
5

Prediction of concentration profile for P doping in Si gas-source molecular beam epitaxy

Year:
1999
Language:
english
File:
PDF, 127 KB
english, 1999
13

The growth of epitaxial aluminium on As containing compound semiconductors

Year:
1999
Language:
english
File:
PDF, 953 KB
english, 1999
14

Miscibility gap calculation for Ga1−xInxNyAs1−y including strain effects

Year:
1999
Language:
english
File:
PDF, 144 KB
english, 1999
15

Insensitivity of self-formed quantum dots to substrate surface roughness

Year:
1999
Language:
english
File:
PDF, 143 KB
english, 1999
18

Synthesis of gallium nitride by ammonia injection into gallium melt

Year:
1999
Language:
english
File:
PDF, 456 KB
english, 1999
24

Optical determination of the size distribution of CuCl nanocrystals in NaCl

Year:
1999
Language:
english
File:
PDF, 121 KB
english, 1999