Volume 209; Issue 4

Main
Journal of Crystal Growth
Volume 209; Issue 4

Journal of Crystal Growth

Volume 209; Issue 4

1

Index

Journal:

Journal of Crystal Growth

Year:

2000

File:

PDF, 103 KB

2000

2

Index

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 35 KB

english, 2000

3

Influences of off-angle and off-direction of substrate on crystalline quality of GaAs and Ge heteroepitaxial films grown on vicinal Si(1 1 0) substrates by molecular-beam epitaxy

Tokuo Yodo, Masaaki Toyama, Yasuyuki Imai, Hideki Shirasawa

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 355 KB

english, 2000

4

Growth and characterization of nanostructured β-SiC via carbothermal reduction of SiO2 xerogels containing carbon nanoparticles

G.W Meng, Z Cui, L.D Zhang, F Phillipp

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 476 KB

english, 2000

5

Die optimal shape in a crystal growth process

Stéphane Despréaux, Patrick Witomski, Thierry Duffar

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 493 KB

english, 2000

6

Effect of accelerated crucible rotation on melt composition in high-pressure vertical Bridgman growth of cadmium zinc telluride

Andrew Yeckel, Jeffrey J. Derby

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 634 KB

english, 2000

7

Simulation of vertical Bridgman growth of benzene, a material with anisotropic solid-phase thermal conductivity

Hanjie Lee, Arne J. Pearlstein

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 510 KB

english, 2000

8

Growth and characterization of Cd1−xZnxTe crystals with high Zn concentrations

J.J Pérez Bueno, M.E Rodrı́guez, O Zelaya-Angel, R Baquero, J Gonzalez-Hernández, L Baños, B.J Fitzpatrick

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 257 KB

english, 2000

9

Se and Zn vapor pressure control in ZnSe single crystal growth by the sublimation method

Hitoshi Tamura, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 310 KB

english, 2000

10

Growth of LiY(1−x−y)LuxNdyF4 crystals for optical applications

I.M. Ranieri, S.P. Morato, L.C. Courrol, H.M. Shihomatsu, A.H.A. Bressiani, N.M.P. Moraes

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 139 KB

english, 2000

11

Laser damage from harmful impurities in meta-barium borate crystal

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 598 KB

english, 2000

12

X-ray diffraction study of lattice engineered manganite magnetoresistive films

V. Trtı́k, C. Ferrater, F. Sánchez, M. Varela, J. Fontcuberta, M. Bibes, B. Martı́nez

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 661 KB

english, 2000

13

On the properties of large banded spherulites in a maleic anhydride–polyacrylonitrile mixture

Michael M Degen, Nicola Costanzino, John Bechhoefer

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 382 KB

english, 2000

14

Effect of substrate rotation on inter-surface diffusion in MBE for mesa-structure fabrication

D. Kishimoto, T. Noda, Y. Nakamura, H. Sakaki, T. Nishinaga

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 420 KB

english, 2000

15

ZrO2–CeO2 and CeO2–La2O3 film growth on oxide substrates and their applications in oxide heterostructures

A.N Khodan, J.-P Contour, D Michel, O Durand, R Lyonnet, M Mihet

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 633 KB

english, 2000

16

Synthesis, growth and characterization of bismuth tellurite crystals

S Kumaragurubaran, D Krishnamurthy, C Subramanian, P Ramasamy

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 365 KB

english, 2000

17

Numerical analysis on Hg1−xCdxTe growth by ACRT-VBM

Xiaohua Liu, Wanqi Jie, Yaohe Zhou

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 415 KB

english, 2000

18

Study on the solid state reaction between crystalline Co film and Si(1 1 1) substrate

Jifeng Liu, Jiayou Feng, Bin Li, Jing Zhu

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 199 KB

english, 2000

19

Decagonal quasicrystal growth in the undercooled Al72Ni12Co16 alloy

Y.C Liu, X.F Guo, J.H Yang, G.C Yang, Y.H Zhou

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 481 KB

english, 2000

20

Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (1 1 3)B InP substrates

S Fréchengues, N Bertru, V Drouot, C Paranthoen, O Dehaese, S Loualiche, A Le Corre, B Lambert

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 370 KB

english, 2000

21

Atmospheric pressure vapor-phase growth of ZnO using a chloride source

Naoyuki Takahashi, Kazuhiko Kaiya, Kouji Omichi, Takato Nakamura, Shinji Okamoto, Hajime Yamamoto

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 206 KB

english, 2000

22

Excess ion density at the GaP/GaP liquid-phase epitaxial regrowth interface

Takao Saito, Yutaka Oyama, Ken Suto, Jun-ichi Nishizawa, Tomoyuki Kimura

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 263 KB

english, 2000

23

Nonstoichiometric KY(WO4)2: crystal growth, chemical and physical characterization

E. Gallucci, C. Goutaudier, G. Boulon, M.Th. Cohen-Adad, B.F. Mentzen

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 816 KB

english, 2000

24

Growth temperature dependence of substitutional carbon incorporation in Si1−yCy alloys and Si1−yCy/Si multiple quantum wells

M.S Jeong, S.H Ihm, J.H Seok, O.H Cha, J.Y Kim, E.-K Suh, H.J Lee

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 322 KB

english, 2000

25

Growth and characterization of strained superlattices δ-GaNxAs1−x/GaAs by molecular beam epitaxy

Z Pan, L.H Li, Y.W Lin, Z.Q Zhou, W Zhang, Y.T Wang, R.H Wu

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 200 KB

english, 2000

26

Study of the effect of dislocations introduced by indentation on Cd(1 1 1) and Te(1̄ 1̄ 1̄) faces on the electrical and optical properties of CdTe

K Guergouri, N Brihi, R Triboulet

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 178 KB

english, 2000

27

Phase equilibria in the binary systems Li2O–B2O3 and Cs2O–B2O3

A.B. Kaplun, A.B. Meshalkin

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 121 KB

english, 2000

28

Atomic force microscopy studies on the surface morphology of {1 1 1} tabular AgBr crystals

M Plomp, J.G Buijnsters, G Bögels, W.J.P van Enckevort, Dirk Bollen

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 1.16 MB

english, 2000

29

The influence of convection on the duration of the initial solute transient in alloy crystal growth

J.P. Garandet, S. Corre, S. Kaddeche, T. Alboussière

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 240 KB

english, 2000

30

In situ partial pressure measurements and visual observation during crystal growth of ZnSe by seeded physical vapor transport

Ching-Hua Su, S Feth, S.L Lehoczky

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 483 KB

english, 2000

31

Misfit dislocation formation in p/p+ silicon vapor-phase epitaxy

H. Fukuto, P. Feichtinger, G.D. U'Ren, S. Lindo, M.S. Goorsky, T. Magee, D. Oster, J. Moreland

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 596 KB

english, 2000

32

Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction

P Fini, H Marchand, J.P Ibbetson, S.P DenBaars, U.K Mishra, J.S Speck

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 845 KB

english, 2000

33

SrBi2Ta2O9 thin films grown by MOCVD using a novel double metal alkoxide precursor

Dong Suk Shin, Hoon Sang Choi, Yong Tae Kim, In-Hoon Choi

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 276 KB

english, 2000

34

Study of morphological behavior of single diamond crystals

Jürgen Bühler, Yehiam Prior

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 658 KB

english, 2000

35

Nitrogen doping of MOVPE-grown ZnSe by hydrazine derivatives

Udo W Pohl, Jochen Gottfriedsen, Herbert Schumann

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 161 KB

english, 2000

36

Epitaxial growth of Y-stabilised zirconia films on (1 0 0)InP substrates by pulsed laser deposition

E. Vasco, L. Vázquez, M. Aguiló, C. Zaldo

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 195 KB

english, 2000

37

Growth and properties of YAlO3 : Nd single crystals

D.I Savytskii, L.O Vasylechko, A.O Matkovskii, I.M Solskii, A Suchocki, D.Yu Sugak, F Wallrafen

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 379 KB

english, 2000

38

Luminescence and color centers from CNGG : Cr3+ crystal grown by Czochralski method

Yunkui Li, Kai Gäbel, Yiqian Yuan, Shaotang Yin, Keming Du

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 220 KB

english, 2000

39

Microstructural study of Bi2Te3 material obtained by ultrarapid quenching process route

E. Koukharenko, N. Fréty, G. Nabias, V.G. Shepelevich, J.C. Tedenac

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 363 KB

english, 2000

40

MBE growth of high-quality ZnO films on epi-GaN

Hang Ju Ko, Yefan Chen, Soon Ku Hong, Takafumi Yao

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 201 KB

english, 2000

41

Cation effects during aggregation and agglomeration of gibbsite particles under synthetic Bayer crystallisation conditions

Clive A. Prestidge, Igor Ametov

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 252 KB

english, 2000

42

Characterization of Si-doped Ga0.52In0.48P grown by solid source molecular beam epitaxy using deep level transient spectroscopy

S.F. Yoon, P.Y. Lui, H.Q. Zheng

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 153 KB

english, 2000

43

Instability of diborane gas in silicon epitaxial film growth

Hitoshi Habuka, Shoji Akiyama, Toru Otsuka, Wei-Feng Qu

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 184 KB

english, 2000

44

Crystal growth of ammonium chloride in magnetic levitation conditions

M. Hamai, I. Mogi, M. Tagami, S. Awaji, K. Watanabe, M. Motokawa

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 368 KB

english, 2000

45

Crystal structures and magnetic properties of MnAs grown by molecular-beam epitaxy on the (1 1 1)A facets of V-grooved GaAs substrates

Y. Morishita, Y. Sugawara, M. Itoh, K. Sato

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 207 KB

english, 2000

46

Thickness dependence of stable structure of the Stranski–Krastanov mode in the GaPSb/GaP system

Kazuo Nakajima, Toru Ujihara, Satoru Miyashita, Gen Sazaki

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 332 KB

english, 2000

47

Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy

Y. Chen, G.H. Li, W. Zhang, Z.M. Zhu, H.X. Han, Z.P. Wang, W. Zhou, Z.G. Wang

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 151 KB

english, 2000

48

Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution

H.L Wang, D Ning, S.L Feng

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 321 KB

english, 2000

49

Stability of Ba(B0.9Al0.1)2O4 molten zone by floating-zone technique on the ground

X Jia, A Miyazaki, H Kimura

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 307 KB

english, 2000

50

Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices

T. Baron, F. Martin, P. Mur, C. Wyon, M. Dupuy

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 353 KB

english, 2000

51

An interferometric study of the solubility of lysozyme crystals under high pressure

Yoshihisa Suzuki, Tsutomu Sawada, Satoru Miyashita, Hiroshi Komatsu, Gen Sazaki, Toshitaka Nakada

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 80 KB

english, 2000

52

Impurity reduction and crystalline quality improvement due to isovalent doping (In) in GaAs epilayers on Si substrate by chemical beam epitaxy

S Saravanan, M Adachi, N Satoh, T Soga, T Jimbo, M Umeno

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 113 KB

english, 2000

53

Growth of InSb on GaAs using InAlSb buffer layers

R.M Biefeld, J.D Phillips

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 136 KB

english, 2000

54

Tailoring of nanocrystal sizes in CdSe films prepared by chemical deposition

F Trojánek, R Cingolani, D Cannoletta, D Mikeš, P Němec, E Uhlı́řová, J Rohovec, P Malý

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 164 KB

english, 2000

55

Multi-step pulling of GaInSb bulk crystal from ternary solution

Akira Tanaka, Jun Shintani, Masakazu Kimura, Tokuzo Sukegawa

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 306 KB

english, 2000

56

Rapid enlargement of SiC single crystal using a cone-shaped platform

W Bahng, Y Kitou, S Nishizawa, H Yamaguchi, M Nasir Khan, N Oyanagi, S Nishino, K Arai

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 244 KB

english, 2000

57

In situ observation of ellipsometry monolayer oscillations of metalorganic vapor-phase epitaxy-grown III–V compound materials

Jeong-Sik Lee, Shigeo Sugou, Yasuaki Masumoto

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 260 KB

english, 2000

58

Crystallization of diamond from C–O–H fluids under high-pressure and high-temperature conditions

Minoru Akaishi, Shinobu Yamaoka

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 425 KB

english, 2000

59

MBE growth of wide band gap Pb1−xSrxSe on Si(1 1 1) substrate

G Xu, X.M Fang, P.J McCann, Z Shi

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 209 KB

english, 2000

60

Growth, structural, and electrical investigation of self-assembled InAs quantum wires on (0 0 1)InP

C. Walther, W. Hoerstel, H. Niehus, J. Erxmeyer, W.T. Masselink

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 312 KB

english, 2000

61

Characteristics of the GaInP burying layers grown by metalorganic chemical vapor deposition on mesa-patterned GaAs substrates

K. Tateno, H. Uenohara, T. Kagawa, C. Amano

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 479 KB

english, 2000

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