Volume 300; Issue 1

Main
Journal of Crystal Growth
Volume 300; Issue 1

Journal of Crystal Growth

Volume 300; Issue 1

1

The phase and crystal-growth study of group-III nitrides in a 2000 °C at 20 GPa region

H. Saitoh, W. Utsumi, H. Kaneko, K. Aoki

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 677 KB

english, 2007

2

Hydride vapor phase epitaxy of InN by the formation of InCl3 using In metal and Cl2

Yoshinao Kumagai, Jun Kikuchi, Yuuki Nishizawa, Hisashi Murakami, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 174 KB

english, 2007

3

Theoretical approach to initial growth kinetics of GaN on GaN(0 0 1)

Y. Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi, K. Kakimoto

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 428 KB

english, 2007

4

Influence of hydrogen coverage on Si(1 1 1) substrate on the growth of GaN buffer layer

Yuriko Matsuo, Yoshihiro Kangawa, Rie Togashi, Koichi Kakimoto, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 245 KB

english, 2007

5

Threading dislocation reduction in (0 0 01) GaN thin films using SiNx interlayers

M.J. Kappers, R. Datta, R.A. Oliver, F.D.G. Rayment, M.E. Vickers, C.J. Humphreys

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 520 KB

english, 2007

6

Surface step morphologies of GaN films grown on vicinal sapphire (0 0 0 1) substrates by rf-MBE

X.Q. Shen, H. Okumura

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 346 KB

english, 2007

7

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (1 1 2¯ 0)

S.M. Bishop, J.-S. Park, J. Gu, B.P. Wagner, Z.J. Reitmeier, D.A. Batchelor, D.N. Zakharov, Z. Liliental-Weber, R.F. Davis

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 1.00 MB

english, 2007

8

Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy

Tohru Honda, Toshiaki Kobayashi, Shinichi Egawa, Masaru Sawada, Koichi Sugimoto, Taichi Baba

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 252 KB

english, 2007

9

Nucleation conditions for catalyst-free GaN nanowires

K.A. Bertness, A. Roshko, L.M. Mansfield, T.E. Harvey, N.A. Sanford

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 975 KB

english, 2007

10

Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor

C. Hemmingsson, P.P. Paskov, G. Pozina, M. Heuken, B. Schineller, B. Monemar

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 463 KB

english, 2007

11

Formation of large-area freestanding gallium nitride substrates by natural stress-induced separation of GaN and sapphire

Adrian D. Williams, T.D. Moustakas

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 377 KB

english, 2007

12

Bulk GaN crystal growth by the high-pressure ammonothermal method

M.P. D’Evelyn, H.C. Hong, D.-S. Park, H. Lu, E. Kaminsky, R.R. Melkote, P. Perlin, M. Lesczynski, S. Porowski, R.J. Molnar

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 1.03 MB

english, 2007

13

Evaluation of AlN single-crystal grown by sublimation method

Michimasa Miyanaga, Naho Mizuhara, Shinsuke Fujiwara, Mitsuru Shimazu, Hideaki Nakahata, Tomohiro Kawase

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 682 KB

english, 2007

14

Crystallization of low dislocation density GaN by high-pressure solution and HVPE methods

I. Grzegory, B. Łucznik, M. Boćkowski, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 1.15 MB

english, 2007

15

Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy

X.Y. Liu, P. Jänes, P. Holmström, T. Aggerstam, S. Lourdudoss, L. Thylén, T.G. Andersson

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 427 KB

english, 2007

16

Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures

A. Kakanakova-Georgieva, U. Forsberg, I.G. Ivanov, E. Janzén

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 519 KB

english, 2007

17

Key inventions in the history of nitride-based blue LED and LD

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 533 KB

english, 2007

18

High-speed epitaxial growth of AlN above by hydride vapor phase epitaxy

Toru Nagashima, Manabu Harada, Hiroyuki Yanagi, Yoshinao Kumagai, Akinori Koukitu, Kazuya Takada

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 222 KB

english, 2007

19

MOVPE growth and cathodoluminescence properties of GAN microcrystal co-doped with Zn and Si

Y. Honda, Y. Yanase, M. Tsuji, M. Yamaguchi, N. Sawaki

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 846 KB

english, 2007

20

In situ annealing of GaN dot structures grown by droplet epitaxy on (1 1 1) Si substrates

Shigeya Naritsuka, Toshiyuki Kondo, Hiroaki Otsubo, Koji Saitoh, Yo Yamamoto, Takahiro Maruyama

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 644 KB

english, 2007

21

Low-temperature MOCVD growth of InN buffer layers with indium pre-deposition technology

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 422 KB

english, 2007

22

Epitaxial growth of 6H-AlN on M-plane SiC by plasma-assisted molecular beam epitaxy

D.M. Schaadt, O. Brandt, A. Trampert, H.-P. Schönherr, K.H. Ploog

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 568 KB

english, 2007

23

Formation of needle-like and columnar structures of AlN

G.R. Yazdi, M. Syväjärvi, R. Yakimova

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 760 KB

english, 2007

24

AlN growth on sapphire substrate by ammonia MBE

V.G. Mansurov, A.Yu. Nikitin, Yu.G. Galitsyn, S.N. Svitasheva, K.S. Zhuravlev, Z. Osvath, L. Dobos, Z.E. Horvath, B. Pecz

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 842 KB

english, 2007

25

Reactive sputter deposition of AlInN thin films

Q.X. Guo, Y. Okazaki, Y. Kume, T. Tanaka, M. Nishio, H. Ogawa

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 288 KB

english, 2007

26

Growth and characterisation of semi-polar InGaN/GaN MQW structures

M.J. Kappers, J.L. Hollander, C. McAleese, C.F. Johnston, R.F. Broom, J.S. Barnard, M.E. Vickers, C.J. Humphreys

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 439 KB

english, 2007

27

Growth of thick AlxGa1−xN ternary alloy by hydride vapor-phase epitaxy

Takayoshi Yamane, Fumitaka Satoh, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 278 KB

english, 2007

28

a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy

T. Zhu, D. Martin, R. Butté, J. Napierala, N. Grandjean

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 356 KB

english, 2007

29

Effect of middle temperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metalorganic chemical vapor deposition

M. Tsukihara, K. Sumiyoshi, T. Okimoto, K. Kataoka, S. Kawamichi, K. Nishino, Y. Naoi, S. Sakai

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 465 KB

english, 2007

30

Evaluation of sapphire substrate heating behaviour using GaN band-gap thermometry

J.J. Harris, R. Thomson, C. Taylor, D. Barlett, R.P. Campion, V.A. Grant, C.T. Foxon, M.J. Kappers

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 203 KB

english, 2007

31

Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio

Masataka Imura, Naoki Fujimoto, Narihito Okada, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Tadashi Noro, Takashi Takagi, Akira Bandoh

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 720 KB

english, 2007

32

All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

T. Malinauskas, R. Aleksiejūnas, K. Jarašiūnas, B. Beaumont, P. Gibart, A. Kakanakova-Georgieva, E. Janzen, D. Gogova, B. Monemar, M. Heuken

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 210 KB

english, 2007

33

Photoelectric properties of highly excited GaN:Fe epilayers, grown by modulation- and continuous-doping techniques

Z. Bougrioua, M. Azize, B. Beaumont, P. Gibart, T. Malinauskas, K. Neimontas, A. Mekys, J. Storasta, K. Jaras˘iūnas

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 243 KB

english, 2007

34

Crystalline perfection of GaN and AlN epitaxial layers and the main features of structural transformation of crystalline defects

Nikolai Faleev, Christiana Honsberg, Omkar Jani, Ian Ferguson

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 298 KB

english, 2007

35

Selective wet etching of lattice-matched AlInN–GaN heterostructures

F. Rizzi, K. Bejtka, P.R. Edwards, R.W. Martin, I.M. Watson

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 511 KB

english, 2007

36

A surface study of wet etched AlGaN epilayers grown by hot-wall MOCVD

M. Syväjärvi, A. Kakanakova-Georgieva, G.R. Yazdi, A. Karar, U. Forsberg, E. Janzén

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 967 KB

english, 2007

37

Growth of Si/III–V-N/Si structure with two-chamber molecular beam epitaxy system for optoelectronic integrated circuits

Y. Furukawa, H. Yonezu, A. Wakahara, S. Ishiji, S.Y. Moon, Y. Morisaki

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 716 KB

english, 2007

38

Atomic core configurations of the -screw basal dislocation in wurtzite GaN

I. Belabbas, G. Nouet, Ph. Komninou

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 309 KB

english, 2007

39

Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers

V. Darakchieva, T. Paskova, M. Schubert, P.P. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, B.A. Haskell, P.T. Fini, J.S. Speck, S. Nakamura

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 250 KB

english, 2007

40

Growth and characterization of GaPN by OMVPE

Akihiro Wakahara, Yuzo Furukawa, Shinya Itoh, Susumu Hatakenaka, Hiroo Yonezu

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 302 KB

english, 2007

41

Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE

N. Okada, N. Kato, S. Sato, T. Sumii, N. Fujimoto, M. Imura, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Takagi, T. Noro, A. Bandoh

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 765 KB

english, 2007

42

Investigation of n-GaN/p-SiC/n-SiC heterostructures

A.A. Lebedev, O.Yu. Ledyaev, A.M. Strel’chuk, A.N. Kuznetsov, A.E. Nikolaev, A.S. Zubrilov, A.A. Volkova

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 171 KB

english, 2007

43

Preface

Rositza Yakimova, Bo Monemar

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 76 KB

english, 2007

44

Growth of high-In-content InAlN nanocolumns on Si (1 1 1) by RF-plasma-assisted molecular-beam epitaxy

Jumpei Kamimura, Tetsuya Kouno, Shunsuke Ishizawa, Akihiko Kikuchi, Katsumi Kishino

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 400 KB

english, 2007

45

Evolution of threading dislocations in MOCVD-grown GaN films on (1 1 1) Si substrates

X. Weng, S. Raghavan, J.D. Acord, A. Jain, E.C. Dickey, J.M. Redwing

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 622 KB

english, 2007

46

Improvements of surface morphology and sheet resistance of AlGaN/GaN HEMT structures using quasi AlGaN barrier layers

Y. Kawakami, X.Q. Shen, G. Piao, M. Shimizu, H. Nakanishi, H. Okumura

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 413 KB

english, 2007

47

Aluminum monolayers on Si (1 1 1) for MBE-growth of GaN

X.Y. Liu, H.F. Li, A. Uddin, T.G. Andersson

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 693 KB

english, 2007

48

Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy

C. Liu, P.A. Shields, S. Denchitcharoen, S. Stepanov, A. Gott, W.N. Wang

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 1.09 MB

english, 2007

49

Interfacial chemistry and energy band line-up of pentacene with the GaN (0 0 0 1) surface

J. Uhlrich, M. Garcia, S. Wolter, A.S. Brown, T.F. Kuech

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 521 KB

english, 2007

50

Structural and optical properties of GaN nanocolumns grown on (0 0 0 1) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy

Hiroto Sekiguchi, Takuya Nakazato, Akihiko Kikuchi, Katsumi Kishino

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 429 KB

english, 2007

51

Effect of low-temperature InGaN interlayers on structural and optical properties of In-rich InGaN

Hyunseok Na, Shinya Takado, Shinya Sawada, Masahito Kurouchi, Takanobu Akagi, Hiroyuki Naoi, Tsutomu Araki, Yasushi Nanishi

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 743 KB

english, 2007

52

Electronic structure of nitride surfaces

David Segev, Chris G. Van de Walle

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 554 KB

english, 2007

53

Vacancy defect distribution in heteroepitaxial -plane GaN grown by hydride vapor phase epitaxy

F. Tuomisto, T. Paskova, S. Figge, D. Hommel, B. Monemar

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 146 KB

english, 2007

54

Effect of island coalescence on structural and electrical properties of InN thin films

V. Lebedev, V. Cimalla, F.M. Morales, J.G. Lozano, D. González, Ch. Mauder, O. Ambacher

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 1.21 MB

english, 2007

55

Contents ISGN-1

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 142 KB

english, 2007