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Volume 310; Issue 23
Main
Journal of Crystal Growth
Volume 310; Issue 23
Journal of Crystal Growth
Volume 310; Issue 23
1
Carrier injection efficiency in nitride LEDs
Dong S. Lee
,
Daniel Byrnes
,
Aniruddh Parekh
,
Steve Ting
,
William Quinn
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 347 KB
Your tags:
english, 2008
2
Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrate
C.H. Chiu
,
Zhen-Yu Li
,
C.L. Chao
,
M.H. Lo
,
H.C. Kuo
,
P.C. Yu
,
T.C. Lu
,
S.C. Wang
,
K.M. Lau
,
S.J. Cheng
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 545 KB
Your tags:
english, 2008
3
Non-linear surface reaction kinetics in GaAs selective area MOVPE
Haizheng Song
,
Yunpeng Wang
,
Masakazu Sugiyama
,
Yoshiaki Nakano
,
Yukihiro Shimogaki
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 267 KB
Your tags:
english, 2008
4
Vapor pressure of germanium precursors
J. Pangrác
,
M. Fulem
,
E. Hulicius
,
K. Melichar
,
T. Šimeček
,
K. Růžička
,
P. Morávek
,
V. Růžička
,
S.A. Rushworth
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 178 KB
Your tags:
english, 2008
5
Selective-area growth of GaAs and InAs nanowires—homo- and heteroepitaxy using templates
H. Paetzelt
,
V. Gottschalch
,
J. Bauer
,
G. Benndorf
,
G. Wagner
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 1.97 MB
Your tags:
english, 2008
6
Development and characterisation of improved ruthenium dopant sources
S. Rushworth
,
R. Odedra
,
P. Viswanathan
,
S. Dosanjh
,
I. Lealman
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 837 KB
Your tags:
english, 2008
7
Temperature and current dependences of electroluminescence from InGaN/GaN multiple quantum wells
Jiunn-Chyi Lee
,
Ya-Fen Wu
,
Yi-Ping Wang
,
Tzer-En Nee
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 250 KB
Your tags:
english, 2008
8
Growth of various antimony-containing alloys by MOVPE
Christian Grasse
,
Ralf Meyer
,
Uwe Breuer
,
Gerhard Böhm
,
Markus-Christian Amann
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 607 KB
Your tags:
english, 2008
9
Effects of off-axis GaN substrates on optical properties of m-plane InGaN/GaN light-emitting diodes
Hisashi Yamada
,
Kenji Iso
,
Hisashi Masui
,
Makoto Saito
,
Kenji Fujito
,
Steven P. DenBaars
,
Shuji Nakamura
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 756 KB
Your tags:
english, 2008
10
Micro-Raman for compositions characterization of selective area growth of AlxGayIn1−x−yAs materials by metal-organic vapor-phase epitaxy
S. Ould Saad Hamady
,
N. Dupuis
,
J. Décobert
,
A. Ougazzaden
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 879 KB
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english, 2008
11
Highly spin-polarized electron photocathode based on GaAs–GaAsP superlattice grown on mosaic-structured buffer layer
Xiuguang Jin
,
Yuya Maeda
,
Takashi Saka
,
Masatoshi Tanioku
,
Shingo Fuchi
,
Toru Ujihara
,
Yoshikazu Takeda
,
Naoto Yamamoto
,
Yasuhide Nakagawa
,
Atsushi Mano
,
Shoji Okumi
,
Masahiro Yamamoto
,
Tsutomu Nakani
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 639 KB
Your tags:
english, 2008
12
Hydrogen-related defects in InGaP/GaAs heterojunction bipolar transistors
Hisashi Yamada
,
Noboru Fukuhara
,
Masahiko Hata
,
Katsuhiro Akimoto
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 297 KB
Your tags:
english, 2008
13
Quantum-dot semiconductor disk lasers
T.D. Germann
,
A. Strittmatter
,
U.W. Pohl
,
D. Bimberg
,
J. Rautiainen
,
M. Guina
,
O.G. Okhotnikov
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 456 KB
Your tags:
english, 2008
14
Growth of Ga-doped ZnO by MOVPE using diisopropylzinc and tertiary butanol
Naoki Nishimoto
,
Takahiro Yamamae
,
Takashi Kaku
,
Yuki Matsuo
,
Kasilingam Senthilkumar
,
Obuliraj Senthilkumar
,
Jun Okamoto
,
Yasuji Yamada
,
Shugo Kubo
,
Yasuhisa Fujita
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 196 KB
Your tags:
english, 2008
15
Step-flow growth of homoepitaxial ZnO thin films by ultrasonic spray-assisted MOVPE
Hiroyuki Nishinaka
,
Shizuo Fujita
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 689 KB
Your tags:
english, 2008
16
MOVPE growth of GaN around ZnO nanopillars
S.B. Thapa
,
J. Hertkorn
,
T. Wunderer
,
F. Lipski
,
F. Scholz
,
A. Reiser
,
Y. Xie
,
M. Feneberg
,
K. Thonke
,
R. Sauer
,
M. Dürrschnabel
,
L.D. Yao
,
D. Gerthsen
,
H. Hochmuth
,
M. Lorenz
,
M. Grundmann
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 562 KB
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english, 2008
17
Hexagonal BN epitaxial growth on (0 0 0 1) sapphire substrate by MOVPE
Y. Kobayashi
,
T. Akasaka
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 599 KB
Your tags:
english, 2008
18
Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots
A. Hospodková
,
J. Pangrác
,
J. Oswald
,
E. Hulicius
,
K. Kuldová
,
J. Vyskočil
,
K. Melichar
,
T. Šimeček
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 665 KB
Your tags:
english, 2008
19
Growth of InAsSb/InPSb heterojunctions for mid-IR detector applications
O.J. Pitts
,
D. Lackner
,
Y.T. Cherng
,
S.P. Watkins
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 148 KB
Your tags:
english, 2008
20
Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE
M. Zorn
,
P. Klopp
,
F. Saas
,
A. Ginolas
,
O. Krüger
,
U. Griebner
,
M. Weyers
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 512 KB
Your tags:
english, 2008
21
Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes
Christian Kaspari
,
Martin Zorn
,
Markus Weyers
,
Götz Erbert
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 239 KB
Your tags:
english, 2008
22
InAs island-to-ring transformation by a partial capping layer
A. Aierken
,
T. Hakkarainen
,
J. Riikonen
,
M. Sopanen
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 328 KB
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english, 2008
23
Type II GaAsxSb1−x/InAs (x
K.D. Moiseev
,
V.V. Romanov
,
T.I. Voronina
,
T.S. Lagunova
,
M.P. Mikhailova
,
Yu.P. Yakovlev
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 249 KB
Your tags:
english, 2008
24
Very high efficiency triple junction solar cells grown by MOVPE
M. Stan
,
D. Aiken
,
B. Cho
,
A. Cornfeld
,
J. Diaz
,
V. Ley
,
A. Korostyshevsky
,
P. Patel
,
P. Sharps
,
T. Varghese
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 691 KB
Your tags:
english, 2008
25
Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer
O. Svensk
,
P.T. Törmä
,
S. Suihkonen
,
M. Ali
,
H. Lipsanen
,
M. Sopanen
,
M.A. Odnoblyudov
,
V.E. Bougrov
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 211 KB
Your tags:
english, 2008
26
Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
P.T. Törmä
,
O. Svensk
,
M. Ali
,
S. Suihkonen
,
M. Sopanen
,
M.A. Odnoblyudov
,
V.E. Bougrov
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 620 KB
Your tags:
english, 2008
27
Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4
J. Décobert
,
N. Lagay
,
B. Thevenard
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 367 KB
Your tags:
english, 2008
28
Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition
Jianping Liu
,
Jae-Hyun Ryou
,
Zachary Lochner
,
Jae Limb
,
Dongwon Yoo
,
Russell D. Dupuis
,
Zhihao Wu
,
Alec M. Fischer
,
Fernando A. Ponce
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 661 KB
Your tags:
english, 2008
29
Red to orange electroluminescence from InP/AlGaInP quantum dots at room temperature
R. Roßbach
,
W.-M. Schulz
,
M. Eichfelder
,
M. Reischle
,
G.J. Beirne
,
M. Jetter
,
P. Michler
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 478 KB
Your tags:
english, 2008
30
Tailor-made precursors for the deposition of Sb-containing materials by the MOCVD process
Daniella Schuchmann
,
Marcel Schwartz
,
Stephan Schulz
,
Andreas Seemayer
,
Klaus Wandelt
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 1.13 MB
Your tags:
english, 2008
31
Increased single-photon emission from InP/AlGaInP quantum dots grown on AlGaAs distributed Bragg reflectors
R. Roßbach
,
W.-M. Schulz
,
M. Reischle
,
G.J. Beirne
,
M. Jetter
,
P. Michler
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 696 KB
Your tags:
english, 2008
32
Dislocation reduction of GaSb on GaAs by metalorganic chemical vapor deposition with epitaxial lateral overgrowth
Kotaro Zaima
,
Rei Hashimoto
,
Mizunori Ezaki
,
Masao Nishioka
,
Yasuhiko Arakawa
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 476 KB
Your tags:
english, 2008
33
MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applications
S. Gupta
,
W.E. Fenwick
,
A. Melton
,
T. Zaidi
,
H. Yu
,
V. Rengarajan
,
J. Nause
,
A. Ougazzaden
,
I.T. Ferguson
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 1.23 MB
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english, 2008
34
Ripening of InAs quantum dots on GaAs (0 0 1) investigated with in situ scanning tunneling microscopy in metal–organic vapor phase epitaxy
Raimund Kremzow
,
Markus Pristovsek
,
Michael Kneissl
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 1.10 MB
Your tags:
english, 2008
35
Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates
C. Mauder
,
L. Rahimzadeh Khoshroo
,
H. Behmenburg
,
T.C. Wen
,
Y. Dikme
,
M.V. Rzheutskii
,
G.P. Yablonskii
,
J. Woitok
,
M.M.C. Chou
,
M. Heuken
,
H. Kalisch
,
R.H. Jansen
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 535 KB
Your tags:
english, 2008
36
Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications
M. Longo
,
O. Salicio
,
C. Wiemer
,
R. Fallica
,
A. Molle
,
M. Fanciulli
,
C. Giesen
,
B. Seitzinger
,
P.K. Baumann
,
M. Heuken
,
S. Rushworth
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 1.17 MB
Your tags:
english, 2008
37
Formation of textured sapphire substrates by self-arrangement process and wet etching for InGaAlN LEDs
A.V. Sakharov
,
W.V. Lundin
,
E.E. Zavarin
,
M.A. Sinitsyn
,
A.E. Nikolaev
,
E.Yu. Lundina
,
A.F. Tsatsulnikov
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 726 KB
Your tags:
english, 2008
38
Ambience effects in annealing on improvements of optical properties of GaInNAs/GaAs single quantum wells
Takashi Ishizuka
,
Hideyuki Doi
,
Mitsuru Shimazu
,
Shigenori Takagishi
,
Ryuta Yaginuma
,
Masaaki Nakayama
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 761 KB
Your tags:
english, 2008
39
Hexagonal boron nitride grown by MOVPE
Y. Kobayashi
,
T. Akasaka
,
T. Makimoto
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 1.01 MB
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english, 2008
40
Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition
T.S. Ko
,
T.C. Wang
,
H.M. Huang
,
J.R. Chen
,
H.G. Chen
,
C.P. Chu
,
T.C. Lu
,
H.C. Kuo
,
S.C. Wang
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 834 KB
Your tags:
english, 2008
41
VLS growth of GaAs/(InGa)As/GaAs axial double-heterostructure nanowires by MOVPE
J. Bauer
,
V. Gottschalch
,
H. Paetzelt
,
G. Wagner
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 998 KB
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english, 2008
42
Growth and characterization of unintentionally doped GaN grown on silicon(1 1 1) substrates
M. Leys
,
Kai Cheng
,
J. Derluyn
,
S. Degroote
,
M. Germain
,
G. Borghs
,
C.A. Taylor
,
P. Dawson
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 273 KB
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english, 2008
43
Characterization of GaSb nanowires grown by MOVPE
Mattias Jeppsson
,
Kimberly A. Dick
,
Henrik A. Nilsson
,
Niklas Sköld
,
Jakob B. Wagner
,
Philippe Caroff
,
Lars-Erik Wernersson
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 469 KB
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english, 2008
44
In-situ etching of GaAs/AlxGa1−xAs by CBr4
Andre Maaßdorf
,
Markus Weyers
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 327 KB
Your tags:
english, 2008
45
Computational intelligence applied to the growth of quantum dots
Anderson P. Singulani
,
Omar P. Vilela Neto
,
Marco C. Aurélio Pacheco
,
Marley B.R. Vellasco
,
Maurício P. Pires
,
Patrícia L. Souza
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 375 KB
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english, 2008
46
Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy
Christian Meissner
,
Simon Ploch
,
Martin Leyer
,
Markus Pristovsek
,
Michael Kneissl
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 597 KB
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english, 2008
47
Improvements in the crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressure
Hisashi Murakami
,
Hyun-Chol Cho
,
Yoshinao Kumagai
,
Akinori Koukitu
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 676 KB
Your tags:
english, 2008
48
Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots
A. Strittmatter
,
T.D. Germann
,
Th. Kettler
,
K. Posilovic
,
J. Pohl
,
U.W. Pohl
,
D. Bimberg
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 234 KB
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english, 2008
49
Emission and microstructural behaviors in the InGaN/GaN MQWs with the p-GaN layers grown at different growth temperatures
Bo Hyun Kong
,
Won Suk Han
,
Hyung Koun Cho
,
Mi Yang Kim
,
Rak Jun Choi
,
Bae Kyun Kim
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 866 KB
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english, 2008
50
MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications
Hongbo Yu
,
Shenjie Wang
,
Nola Li
,
William Fenwick
,
Andrew Melton
,
B. Klein
,
Ian Ferguson
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 458 KB
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english, 2008
51
III–V epitaxy on Si for photonics applications
Hiroo Yonezu
,
Yuzo Furukawa
,
Akihiro Wakahara
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 707 KB
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english, 2008
52
Novel technique for monitoring of MOVPE processes
P.V. Volkov
,
A.V. Goryunov
,
V.M. Daniltsev
,
A.Yu. Luk’yanov
,
D.A. Pryakhin
,
A.D. Tertyshnik
,
O.I. Khrykin
,
V.I. Shashkin
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 395 KB
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english, 2008
53
Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited masks
J. Hertkorn
,
F. Lipski
,
P. Brückner
,
T. Wunderer
,
S.B. Thapa
,
F. Scholz
,
A. Chuvilin
,
U. Kaiser
,
M. Beer
,
J. Zweck
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 612 KB
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english, 2008
54
Modulated precursor flow epitaxial growth of ternary AlGaN by metalorganic chemical vapor deposition
Hee Jin Kim
,
Suk Choi
,
Dongwon Yoo
,
Jae-Hyun Ryou
,
Russell D. Dupuis
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 731 KB
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english, 2008
55
Effect of the AIN nucleation layer growth on AlN material quality
O. Reentilä
,
F. Brunner
,
A. Knauer
,
A. Mogilatenko
,
W. Neumann
,
H. Protzmann
,
M. Heuken
,
M. Kneissl
,
M. Weyers
,
G. Tränkle
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 505 KB
Your tags:
english, 2008
56
Growth of red InP/GaInP quantum dots on a low density InAs/GaAs island seed layer by MOVPE
R. Roßbach
,
W.-M. Schulz
,
M. Reischle
,
G.J. Beirne
,
C. Hermannstädter
,
M. Jetter
,
P. Michler
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 519 KB
Your tags:
english, 2008
57
Temperature effect on the growth of strained GaAs1−ySby/GaAs (y>0.4) quantum wells by MOVPE
Y.K. Su
,
C.T. Wan
,
R.W. Chuang
,
C.Y. Huang
,
W.C. Chen
,
Y.S. Wang
,
H.C. Yu
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 451 KB
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english, 2008
58
Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si
Momoko Deura
,
Takuya Hoshii
,
Mitsuru Takenaka
,
Shinichi Takagi
,
Yoshiaki Nakano
,
Masakazu Sugiyama
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 550 KB
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english, 2008
59
Effect of an Al2O3 transition layer on InGaN on ZnO substrates by organometallic vapor-phase epitaxy
Nola Li
,
Shen-Jie Wang
,
Chung-Lung Huang
,
Zhe Chuan Feng
,
Adriana Valencia
,
Jeff Nause
,
Christopher Summers
,
Ian Ferguson
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 451 KB
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english, 2008
60
Growth and studies of Si-doped AlN layers
S.B. Thapa
,
J. Hertkorn
,
F. Scholz
,
G.M. Prinz
,
R.A.R. Leute
,
M. Feneberg
,
K. Thonke
,
R. Sauer
,
O. Klein
,
J. Biskupek
,
U. Kaiser
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
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61
1150-nm wavelength InGaAs/GaAs VCSELs incorporating regrown tunnel junctions
Alexandru Mereuta
,
Vladimir Iakovlev
,
Andrei Caliman
,
Lukas Mutter
,
Alexei Sirbu
,
Eli Kapon
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
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62
Metal-organic molecular beam epitaxy growth of InN films on highly orientated TCO/Si(1 0 0) substrates
Shou-Yi Kuo
,
Wei-Chun Chen
,
Chien-Nan Hsiao
,
Fang-I Lai
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
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63
Demonstration of planar thick InP layers by selective MOVPE
N. Dupuis
,
J. Décobert
,
P.-Y. Lagrée
,
N. Lagay
,
D. Carpentier
,
F. Alexandre
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
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64
Monolithic integration of Ga(NAsP)/(BGa)P multi-quantum well structures on (0 0 1) silicon substrate by MOVPE
B. Kunert
,
S. Zinnkann
,
K. Volz
,
W. Stolz
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
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65
Growth conditions and surface morphology of AlN MOVPE
A.V. Lobanova
,
E.V. Yakovlev
,
R.A Talalaev
,
S.B. Thapa
,
F. Scholz
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 219 KB
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66
Hydrogen effects in III-nitride MOVPE
E.V. Yakovlev
,
R.A. Talalaev
,
A.S. Segal
,
A.V. Lobanova
,
W.V. Lundin
,
E.E. Zavarin
,
M.A. Sinitsyn
,
A.F. Tsatsulnikov
,
A.E. Nikolaev
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
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67
OMVPE growth of highly strain-balanced GaInAs/AlInAs/InP for quantum cascade lasers
C.A. Wang
,
R.K. Huang
,
A. Goyal
,
J.P. Donnelly
,
D.R. Calawa
,
S.G. Cann
,
F. O’Donnell
,
J.J. Plant
,
L.J. Missaggia
,
G.W. Turner
,
A. Sanchez-Rubio
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
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68
Doping control and evaluation of pn-junction LED in GaPN grown by OMVPE
Susumu Hatakenaka
,
Yoshiyuki Nakanishi
,
Akihiro Wakahara
,
Yuzo Furukawa
,
Hiroshi Okada
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 334 KB
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69
Growth and characterization of GaN:Mn layers by MOVPE
Zdenek Sofer
,
David Sedmidubský
,
Josef Stejskal
,
Jiří Hejtmánek
,
Miroslav Maryško
,
Karel Jurek
,
Michal Václavů
,
Vladimír Havránek
,
Anna Macková
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 210 KB
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70
Ways to quantitatively detect antiphase disorder in GaP films grown on Si(0 0 1) by transmission electron microscopy
I. Németh
,
B. Kunert
,
W. Stolz
,
K. Volz
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 675 KB
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71
Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes
Russell D. Dupuis
,
Jae-Hyun Ryou
,
Shyh-Chiang Shen
,
P. Douglas Yoder
,
Yun Zhang
,
Hee Jin Kim
,
Suk Choi
,
Zachary Lochner
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
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72
Strain compensated AlGaN/GaN-Bragg-reflectors with high Al content grown by MOVPE
H. Dartsch
,
S. Figge
,
T. Aschenbrenner
,
A. Pretorius
,
A. Rosenauer
,
D. Hommel
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 531 KB
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73
Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate
Cheng-Tien Wan
,
Yan-Kuin Su
,
Ricky W. Chuang
,
Chun-Yuan Huang
,
Yi-Sin Wang
,
Wei-Cheng Chen
,
Hsin-Chieh Yu
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 361 KB
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74
Characterization of GaSb thin films from tailor-made single-source precursors
Andreas Seemayer
,
Alexander Hommes
,
Sascha Hümann
,
Stephan Schulz
,
Klaus Wandelt
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 473 KB
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75
Analysis of germanium epiready wafers for III–V heteroepitaxy
Ignacio Rey-Stolle
,
Enrique Barrigón
,
Beatriz Galiana
,
Carlos Algora
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 415 KB
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76
Structural and optical properties of polar and non-polar ZnO films grown by MOVPE
J.J. Zhu
,
T. Aaltonen
,
V. Venkatachalapathy
,
A. Galeckas
,
A. Yu. Kuznetsov
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 537 KB
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77
MOCVD of thin film photovoltaic solar cells—Next-generation production technology?
S.J.C. Irvine
,
V. Barrioz
,
D. Lamb
,
E.W. Jones
,
R.L. Rowlands-Jones
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 489 KB
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78
Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE
Muhammad Jamil
,
Hongping Zhao
,
John B. Higgins
,
Nelson Tansu
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
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79
SA-MOVPE of InGaAs nanowires and their compositions studied by micro-PL measurement
Takuya Sato
,
Yasunori Kobayashi
,
Junichi Motohisa
,
Shinjiro Hara
,
Takashi Fukui
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 245 KB
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80
Effects of N doping on ZnO thin films grown by MOVPE
Tahir Zaidi
,
William E. Fenwick
,
Andrew Melton
,
Nola Li
,
Shalini Gupta
,
Hongbo Yu
,
Abdallah Ougazzaden
,
Ian Ferguson
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 865 KB
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81
Isoelectronic nitrogen δ-doping in GaP and single-photon emission from individual nitrogen pairs
Yoshiki Sakuma
,
Michio Ikezawa
,
Masato Watanabe
,
Yasuaki Masumoto
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 432 KB
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82
Effects of growth conditions on the crystal structure of gold-seeded GaP nanowires
Jonas Johansson
,
Lisa S. Karlsson
,
Kimberly A. Dick
,
Jessica Bolinsson
,
Brent A. Wacaser
,
Knut Deppert
,
Lars Samuelson
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
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83
Growth and characterization of ZnO nanostructures on sapphire substrates
K. Mergenthaler
,
V. Gottschalch
,
J. Bauer
,
H. Paetzelt
,
G. Wagner
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 1.08 MB
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84
Control of p-type conduction in a-plane Ga1−xInxN (0
Daisuke Iida
,
Motoaki Iwaya
,
Satoshi Kamiyama
,
Hiroshi Amano
,
Isamu Akasaki
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 205 KB
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85
Microstructure of InN epilayers deposited in a close-coupled showerhead reactor
Tapas Ganguli
,
Abdul Kadir
,
Mahesh Gokhale
,
Ravi Kumar
,
A.P. Shah
,
B.M. Arora
,
Arnab Bhattacharya
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 657 KB
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86
The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates
Piotr Caban
,
Kinga Kosciewicz
,
Wlodek Strupinski
,
Marek Wojcik
,
Jaroslaw Gaca
,
Jan Szmidt
,
Mustafa Ozturk
,
Ekmel Ozbay
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 599 KB
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87
Influence of GaInP ordering on the electronic quality of concentrator solar cells
I. Garcia
,
I. Rey-Stolle
,
C. Algora
,
W. Stolz
,
K. Volz
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 1.05 MB
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88
Growth of QW structures with high indium concentration on -plane and -plane surfaces by MOVPE
H. Jönen
,
U. Rossow
,
T. Langer
,
A. Dräger
,
L. Hoffmann
,
H. Bremers
,
A. Hangleiter
,
F. Bertram
,
S. Metzner
,
J. Christen
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 995 KB
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89
Wideband wavelength electroluminescence from InAs/InP QDs using double-cap procedure by MOVPE selective area growth
Y. Saito
,
T. Okawa
,
M. Akaishi
,
K. Shimomura
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 365 KB
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90
VLS growth of GaN nanowires on various substrates
V. Gottschalch
,
G. Wagner
,
J. Bauer
,
H. Paetzelt
,
M. Shirnow
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 875 KB
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91
Photoluminescence and structural analysis of a-plane InGaN layers
T. Aschenbrenner
,
S. Figge
,
M. Schowalter
,
A. Rosenauer
,
D. Hommel
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 552 KB
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92
Enhancement of electron mobility in ZnO layers with applying ultrasonic spray-assisted MOVPE and buffer layers
Yudai Kamada
,
Hiroyuki Nishinaka
,
Naoki Kameyama
,
Shizuo Fujita
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 481 KB
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93
Properties of MOVPE GaN grown on ZnO deposited on Si(0 0 1) and Si(1 1 1) substrates
R. Paszkiewicz
,
B. Paszkiewicz
,
M. Wosko
,
A. Szyszka
,
L. Marciniak
,
J. Prażmowska
,
W. Macherzyński
,
J. Serafińczuk
,
J. Kozłowski
,
M. Tlaczala
,
J. Kováč
,
I. Novotný
,
J. Škriniarová
,
D. Haško
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 644 KB
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94
Kinetic analysis of surface adsorption layer for InGaAsP-related binary materials using in situ RAS
Momoko Deura
,
Yukihiro Shimogaki
,
Yoshiaki Nakano
,
Masakazu Sugiyama
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 364 KB
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95
Growth and characterization of manganese-doped InAsP
M. Pristovsek
,
Ch. Meißner
,
M. Kneissl
,
R. Jakomin
,
S. Vantaggio
,
L. Tarricone
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
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PDF, 288 KB
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96
The critical thickness of InGaN on (0 0 0 1)GaN
M. Leyer
,
J. Stellmach
,
Ch. Meissner
,
M. Pristovsek
,
M. Kneissl
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
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PDF, 586 KB
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97
Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy
Neysha Lobo
,
Abdul Kadir
,
Masihhur R. Laskar
,
A.P. Shah
,
M.R. Gokhale
,
A.A. Rahman
,
B.M. Arora
,
K.L. Narasimhan
,
Arnab Bhattacharya
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 440 KB
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98
Characterization of high-purity arsine and gallium arsenide epilayers grown by MOCVD
Jun Feng
,
Ryan Clement
,
Mark Raynor
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 597 KB
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99
Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPE
G. Orsal
,
N. Maloufi
,
S. Gautier
,
M. Alnot
,
A.A. Sirenko
,
M. Bouchaour
,
A. Ougazzaden
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 676 KB
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100
High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
Jun-Rong Chen
,
Shih-Chun Ling
,
Chin-Tsang Hung
,
Tsung-Shine Ko
,
Tien-Chang Lu
,
Hao-Chung Kuo
,
Shing-Chung Wang
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 612 KB
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101
MOVPE growth of Ga(As)SbN on GaSb substrates
J.Y.T. Huang
,
L.J. Mawst
,
S. Jha
,
T.F. Kuech
,
D. Wang
,
L. Shterengas
,
G. Belenky
,
J.R. Meyer
,
I. Vurgaftman
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 415 KB
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102
Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire by MOVPE
R. Miyagawa
,
M. Narukawa
,
B. Ma
,
H. Miyake
,
K. Hiramatsu
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
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PDF, 1.06 MB
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103
Growth of crack-free AlGaN on selective-area-growth GaN
H. Miyake
,
N. Masuda
,
Y. Ogawahara
,
M. Narukawa
,
K. Hiramatsu
,
T. Ezaki
,
N. Kuwano
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 524 KB
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104
Comparison of electrical properties in GaN grown on Si(1 1 1) and c-sapphire substrate by MOVPE
Tsuneo Ito
,
Yukiyasu Nomura
,
S. Lawrence Selvaraj
,
Takashi Egawa
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 213 KB
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105
MOCVD growth of GaN on porous silicon substrates
Hiroyasu Ishikawa
,
Keita Shimanaka
,
Fumiyuki Tokura
,
Yasuhiko Hayashi
,
Yosuke Hara
,
Masami Nakanishi
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
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PDF, 685 KB
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106
High-density InAs quantum dots on GaNAs buffer layer
R. Suzuki
,
T. Miyamoto
,
T. Sengoku
,
F. Koyama
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 1.04 MB
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107
InAs/InP QDs with GaxIn1−xAs cap layer by a double-cap procedure using MOVPE selective area growth
M. Akaishi
,
T. Okawa
,
Y. Saito
,
K. Shimomura
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
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PDF, 860 KB
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108
GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application
M.-A. di Forte Poisson
,
M. Magis
,
M. Tordjman
,
J. Di Persio
,
R. Langer
,
L. Toth
,
B. Pecz
,
M. Guziewicz
,
J. Thorpe
,
R. Aubry
,
E. Morvan
,
N. Sarazin
,
C. Gaquière
,
G. Meneghesso
,
V. Hoel
,
J.-C. Jacquet
,
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
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PDF, 968 KB
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109
Memory effect of Ge in III–V semiconductors
E. Welser
,
W. Guter
,
A. Wekkeli
,
F. Dimroth
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 330 KB
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110
Control of stress and crystalline quality in GaInN films used for green emitters
Motoaki Iwaya
,
Aya Miura
,
Ryota Senda
,
Tetsuya Nagai
,
Takeshi Kawashima
,
Daisuke Iida
,
Satoshi Kamiyama
,
Hiroshi Amano
,
Isamu Akasaki
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 606 KB
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111
Luminescence of GaAs/AlGaAs core–shell nanowires grown by MOVPE using tertiarybutylarsine
P. Prete
,
F. Marzo
,
P. Paiano
,
N. Lovergine
,
G. Salviati
,
L. Lazzarini
,
T. Sekiguchi
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
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PDF, 691 KB
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112
AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas
S. Gautier
,
T. Aggerstam
,
A. Pinos
,
S. Marcinkevičius
,
K. Liu
,
M. Shur
,
S.M. O’Malley
,
A.A. Sirenko
,
Z. Djebbour
,
A. Migan-Dubois
,
T. Moudakir
,
A. Ougazzaden
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 887 KB
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113
AlGaAs/GaAs heterojunction phototransistor with a double delta-doped base grown by AP MOVPE
Beata Ściana
,
Iwona Zborowska-Lindert
,
Damian Radziewicz
,
Bogusław Boratyński
,
Marek Tłaczała
,
Jaroslav Kováč
,
Rudolf Srnanek
,
Jaroslava Škriniarová
,
Martin Florovič
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 1.28 MB
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114
Catalyst-free growth and characterization of gallium nitride nanorods
Shou-Yi Kuo
,
Fang-I. Lai
,
Wei-Chun Chen
,
Chien-Nan Hsiao
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 535 KB
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115
Properties of non-polar a-plane GaN/AlGaN quantum wells
M.J. Kappers
,
J.L. Hollander
,
C.F. Johnston
,
C. McAleese
,
D.V. Sridhara Rao
,
A.M. Sanchez
,
C.J. Humphreys
,
T.J. Badcock
,
P. Dawson
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 406 KB
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116
Growth of non-polar (1 1 2¯ 0)GaN on a patterned (1 1 0)Si substrate by selective MOVPE
T. Tanikawa
,
D. Rudolph
,
T. Hikosaka
,
Y. Honda
,
M. Yamaguchi
,
N. Sawaki
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 743 KB
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117
Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal–organic vapor phase epitaxy
Shigetoshi Komiyama
,
Kazuyuki Noguchi
,
Shota Suzuki
,
Tohru Honda
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 348 KB
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118
MOVPE growth of antimonide-containing alloy materials for long wavelength applications
T.F. Kuech
,
A.A. Khandekar
,
M. Rathi
,
L.J. Mawst
,
J.Y.T. Huang
,
Xueyan Song
,
S.E. Babcock
,
J.R. Meyer
,
I. Vurgaftman
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 427 KB
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119
In-situ monitoring of the p- and n-type doping in AlGaInP
C. Krahmer
,
A. Behres
,
M. Schubert
,
K. Streubel
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 246 KB
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120
In situ passivation of GaAs surface with aluminum oxide with MOVPE
Yuki Terada
,
Momoko Deura
,
Yukihiro Shimogaki
,
Masakazu Sugiyama
,
Yoshiaki Nakano
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 322 KB
Your tags:
english, 2008
121
Editorial introduction
Brian Mullin
,
Stuart Irvine
,
Ferdinand Scholz
,
Abdallah Ougazzaden
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 63 KB
Your tags:
english, 2008
122
Contributing people to ICMOVPE XIV
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 93 KB
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english, 2008
123
Author index ICMOVPE-14
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 1.60 MB
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english, 2008
124
Subject index ICMOVPE-14
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 1.51 MB
Your tags:
english, 2008
125
Contents of The 14th International conference on Metalorganic Vapor Phase Epitax (ICMOVPE-XIV)
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 1.57 MB
Your tags:
english, 2008
126
InxGa1−xAs/InP selective area metal-organic vapor phase epitaxy for non-magnetic semiconductor spintronics
Masashi Akabori
,
Vitaliy A. Guzenko
,
Thomas Schäpers
,
Hilde Hardtdegen
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 506 KB
Your tags:
english, 2008
127
Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy
Smita Jha
,
Xueyan Song
,
S.E. Babcock
,
T.F. Kuech
,
Dane Wheeler
,
Bin Wu
,
P. Fay
,
Alan Seabaugh
Journal:
Journal of Crystal Growth
Year:
2008
Language:
english
File:
PDF, 546 KB
Your tags:
english, 2008
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