Volume 58; Issue 2

Journal of Crystal Growth

Volume 58; Issue 2
3

Processes in surface formation of HCl gas-phase etched germanium

Year:
1982
Language:
english
File:
PDF, 711 KB
english, 1982
4

Surface topography of HCl gas-phase etched germanium

Year:
1982
Language:
english
File:
PDF, 778 KB
english, 1982
5

The influence of stress on spiral growth

Year:
1982
Language:
english
File:
PDF, 1.43 MB
english, 1982
6

In situ etching of GaAs using AsCl3 in MOVPE. I

Year:
1982
Language:
english
File:
PDF, 880 KB
english, 1982
8

Phase determinations and crystal growth of Pb2KNb5O15 (PKN)

Year:
1982
Language:
english
File:
PDF, 619 KB
english, 1982
14

Flux growth of MNb2O6 (M = Mg, Zn, Ba) single crystals

Year:
1982
Language:
english
File:
PDF, 247 KB
english, 1982
16

International conference on charged particles — Management of electrostatic hazards and problems

Year:
1982
Language:
english
File:
PDF, 70 KB
english, 1982
17

Habit modification of succinic acid crystals grown from different solvents

Year:
1982
Language:
english
File:
PDF, 683 KB
english, 1982
21

Chemical vapor deposition: Numerical models applied to transport of Ge by GeI4 and GeI2

Year:
1982
Language:
english
File:
PDF, 796 KB
english, 1982
22

Defects in PbTe single crystals

Year:
1982
Language:
english
File:
PDF, 1022 KB
english, 1982
24

A novel crystal growth method for GaAs: The liquid encapsulated kyropoulos method

Year:
1982
Language:
english
File:
PDF, 647 KB
english, 1982
25

Lattice structure in Ni-Si coevaporated films

Year:
1982
Language:
english
File:
PDF, 210 KB
english, 1982