Journal of Non-Crystalline Solids

1

Problems encountered in the simulation of defects in silica and its interfaces

N. Capron, A. Lagraa, S. Carniato, G. Boureau

Journal:

Year:

1997

Language:

english

File:

PDF, 322 KB

english, 1997

2

Bond length distribution analysis for native oxide structure characterization using atomic scale simulation

A. Tandia

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 330 KB

english, 1997

3

Migration of atomic hydrogen in crystalline and amorphous SiO2: a molecular dynamics study

A. Bongiorno, L. Colombo, M.I. Trioni

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 402 KB

english, 1997

4

Low temperature, plasma assisted oxidation of amorphous Si

V. Girault, H. Plantier, R.A.B. Devine, F. Templier

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 745 KB

english, 1997

5

Study of SiO2Si interfaces by photocurrent measurements

M.L. Polignano, G. Ferroni, A. Sabbadini, G. Valentini, G. Queirolo

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 498 KB

english, 1997

6

Stationary and time dependent PL emission of v-SiO2 in the UV range

M. Cannas, R. Boscaino, F.M. Gelardi, M. Leone

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 421 KB

english, 1997

7

Low temperature photoluminescence spectroscopy relationship between 3.1 and 4.2 eV bands in vitreous silica

M. Leone, R. Boscaino, M. Cannas, F.M. Gelardi

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 400 KB

english, 1997

8

Influence of the cladding thickness on the evolution of the NBOHC band in optical fibers exposed to gamma radiations

O. Deparis, D.L. Griscom, P. Mégret, M. Decréton, M. Blondel

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 366 KB

english, 1997

9

The influence of quantum effects on the determination of gate oxide thickness from C-V measurements

K. Dmowski, A. Halimaoui

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 472 KB

english, 1997

10

Luminescence of SiO2 quartz induced by swift heavy ion irradiations

J.M. Costantini, F. Brisard, G. Biotteau, L. Protin

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 700 KB

english, 1997

11

In situ ellipsometry and infrared analysis of PECVD SiO2 films deposited in an O2/TEOS helicon reactor

C. Vallée, A. Goullet, F. Nicolazo, A. Granier, G. Turban

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 511 KB

english, 1997

12

Deuterium permeation through SiO2 thin film deposited on stainless steel substrate

R. Checchetto, L.M. Gratton, A. Miotello, C. Tosello

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 432 KB

english, 1997

13

Radiation enhanced transport of hydrogen in SiO2

F. Corni, A. Monelli, G. Ottaviani, R. Tonini, G. Queirolo, L. Zanotti

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 418 KB

english, 1997

14

Deposition of SiO2 and TiO2 thin films by plasma enhanced chemical vapor deposition for antireflection coating

C. Martinet, V. Paillard, A. Gagnaire, J. Joseph

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 432 KB

english, 1997

15

Energy gap-determination of a carbon contaminated thermal silicon oxide thin film using reflection electron energy loss spectroscopy

P. Poveda, A. Glachant

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 371 KB

english, 1997

16

Effect of fictive temperature on medium range order in v-SiO2

C. Chemarin, B. Champagnon, G. Panczer

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 342 KB

english, 1997

17

H+ and D+ associated charge buildup during annealing of Si/SiO2/Si structures

K. Vanheusden, W.L. Warren, R.A.B. Devine

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 596 KB

english, 1997

18

Gamma and neutron radiation damage studies of optical fibres

K. Gill, R. Grabit, M. Persello, G. Stefanini, F. Vasey

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 445 KB

english, 1997

19

Mechanisms and kinetics of room-temperature silicon oxidation

G.F. Cerofolini, L. Meda

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 562 KB

english, 1997

20

Suboxides at the Si/SiO2 interface: a Si2p core level study with synchrotron radiation

F. Rochet, Ch. Poncey, G. Dufour, H. Roulet, C. Guillot, F. Sirotti

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 626 KB

english, 1997

21

Hole trapping in flash EEPROM gate oxide and damages induced by gate to source erasing

P. Candelier, F. Mondon, B. Guillaumot, G. Reimbold, F. Martin

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 428 KB

english, 1997

22

Generation of hot holes in MOSFET

F. Nebel, M. Jourdain, A. Meinertzhagen, P. Candelier

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 389 KB

english, 1997

23

Comparison of the charges generated by Fowler-Nordheim tunneling injection in different oxides of metal-oxide-semiconductor capacitors

G. Yard, A. Meinertzhagen, C. Petit, M. Jourdain, F. Mondon

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 389 KB

english, 1997

24

An innovative process sequence to obtain reliable nitrided active dielectrics

G. Ghidini, C. Clementi

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 251 KB

english, 1997

25

Si3N4 thickness and its oxidation time influence on O/N/O DRAM cell performance

Luciano Grifoni, Paolo Massimi, Fabrizio Fama'

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 325 KB

english, 1997

26

Silicon oxide defects in aging of MOS electronic devices

Marc de la Bardonnie, Alain Maouad, Pierre Mialhe

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 302 KB

english, 1997

27

Low temperature time resolved photoluminescence of the 3.1 and 4.2 eV emission bands in Ge-doped silica

A. Anedda, C.M. Carbonaro, R. Corpino, A. Serpi

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 499 KB

english, 1997

28

Photoluminescence spectroscopy of direct bonded silica based wafers

A. Boukenter, Y. Ouerdane, A. Mure-Ravaud, G. Pandraud, S. Pelissier, F. Pigeon, B. Biasse

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 247 KB

english, 1997

29

Compositional and electrical properties of SiO2/Si3N4/SiO2 stacked films grown onto silicon substrates and annealed in hydrogen

S. Santucci, R. Alfonsetti, A. Di Giacomo, P. Fiorani, L. Lozzi, G. Moccia, L. Ottaviano, M. Passacantando, P. Picozzi

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 472 KB

english, 1997

30

Defects studies in silica based optical fibers by laser spectroscopy

F. Goutaland, A. Boukenter, Y. Ouerdane, G. Monnom

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 304 KB

english, 1997

31

Scanning capacitance microscope, an alternative technique to the C-V measurement for the SiO2 characterisation

F. Bordoni, L. Fasciani, R. De Tommasis, A. Di Giacomo, G. Moccia

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 332 KB

english, 1997

32

On the origin of the 5.0 and 7.6 eV absorption bands in oxygen deficient α-quartz and amorphous silica. A first principles quantum-chemical study

Gianfranco Pacchioni, Gianluigi Ieranò

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 650 KB

english, 1997

33

Role of impurities in the 5.16 eV optical absorption band of Ge-doped silica

M. Martini, F. Meinardi, A. Paleari, L. Portinari, G. Spinolo

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 310 KB

english, 1997

34

Preface

Roderick A.B. Devine, Georgio Spinolo, Jean-Luc Autran, Anna Vedda

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 33 KB

english, 1997

36

Author index

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 186 KB

english, 1997

37

Subject index

Journal:

Journal of Non-Crystalline Solids

Year:

1997

File:

PDF, 103 KB

1997

38

Low frequency noise characterization of 0.25 μm Si CMOS transistors

T. Boutchacha, G. Ghibaudo, G. Guégan, M. Haond

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 351 KB

english, 1997

Volume 216; Issue none

Problems encountered in the simulation of defects in silica and its interfaces

Bond length distribution analysis for native oxide structure characterization using atomic scale simulation

Migration of atomic hydrogen in crystalline and amorphous SiO2: a molecular dynamics study

Low temperature, plasma assisted oxidation of amorphous Si

Study of SiO2Si interfaces by photocurrent measurements

Stationary and time dependent PL emission of v-SiO2 in the UV range

Low temperature photoluminescence spectroscopy relationship between 3.1 and 4.2 eV bands in vitreous silica

Influence of the cladding thickness on the evolution of the NBOHC band in optical fibers exposed to gamma radiations

The influence of quantum effects on the determination of gate oxide thickness from C-V measurements

Luminescence of SiO2 quartz induced by swift heavy ion irradiations

In situ ellipsometry and infrared analysis of PECVD SiO2 films deposited in an O2/TEOS helicon reactor

Deuterium permeation through SiO2 thin film deposited on stainless steel substrate

Radiation enhanced transport of hydrogen in SiO2

Deposition of SiO2 and TiO2 thin films by plasma enhanced chemical vapor deposition for antireflection coating

Energy gap-determination of a carbon contaminated thermal silicon oxide thin film using reflection electron energy loss spectroscopy

Effect of fictive temperature on medium range order in v-SiO2

H+ and D+ associated charge buildup during annealing of Si/SiO2/Si structures

Gamma and neutron radiation damage studies of optical fibres

Mechanisms and kinetics of room-temperature silicon oxidation

Suboxides at the Si/SiO2 interface: a Si2p core level study with synchrotron radiation

Hole trapping in flash EEPROM gate oxide and damages induced by gate to source erasing

Generation of hot holes in MOSFET

Comparison of the charges generated by Fowler-Nordheim tunneling injection in different oxides of metal-oxide-semiconductor capacitors

An innovative process sequence to obtain reliable nitrided active dielectrics

Si3N4 thickness and its oxidation time influence on O/N/O DRAM cell performance

Silicon oxide defects in aging of MOS electronic devices

Low temperature time resolved photoluminescence of the 3.1 and 4.2 eV emission bands in Ge-doped silica

Photoluminescence spectroscopy of direct bonded silica based wafers

Compositional and electrical properties of SiO2/Si3N4/SiO2 stacked films grown onto silicon substrates and annealed in hydrogen

Defects studies in silica based optical fibers by laser spectroscopy

Scanning capacitance microscope, an alternative technique to the C-V measurement for the SiO2 characterisation

On the origin of the 5.0 and 7.6 eV absorption bands in oxygen deficient α-quartz and amorphous silica. A first principles quantum-chemical study

Role of impurities in the 5.16 eV optical absorption band of Ge-doped silica

Contents

Preface

Author index

Subject index

Low frequency noise characterization of 0.25 μm Si CMOS transistors