Volume 14; Issue 48

3

Dislocation motion in InSb crystals under a magnetic field

Year:
2002
Language:
english
File:
PDF, 71 KB
english, 2002
10

Dislocation-related electron capture behaviour of traps in n-type GaN

Year:
2002
Language:
english
File:
PDF, 304 KB
english, 2002
12

High-temperature strength of III V nitride crystals

Year:
2002
Language:
english
File:
PDF, 197 KB
english, 2002
13

Extended defects in GaN films grown at high growth rate

Year:
2002
Language:
english
File:
PDF, 237 KB
english, 2002
16

A quantum mechanical study of the stability of SnO 2 nanocrystalline grains

Year:
2002
Language:
english
File:
PDF, 95 KB
english, 2002
17

The Luttinger liquid concept for interacting electrons in one dimension

Year:
2002
Language:
english
File:
PDF, 137 KB
english, 2002
23

Electrochemical defect profiling for semiconductor heterostructures

Year:
2002
Language:
english
File:
PDF, 126 KB
english, 2002
24

Electron-beam-induced-current study of defects in GaN; experiments and simulation

Year:
2002
Language:
english
File:
PDF, 323 KB
english, 2002
34

Transition from brittleness to ductility in SiC

Year:
2002
Language:
english
File:
PDF, 219 KB
english, 2002
40

Impurity effects on dislocation activities in Si

Year:
2002
Language:
english
File:
PDF, 77 KB
english, 2002
45

A step associated with the     19 (2-530) tilt boundary in GaN

Year:
2002
Language:
english
File:
PDF, 391 KB
english, 2002
49

Analysis of polycrystalline GaN grown on a glass substrate

Year:
2002
Language:
english
File:
PDF, 197 KB
english, 2002
54

Internal gettering in epi-silicon prepared under different conditions

Year:
2002
Language:
english
File:
PDF, 271 KB
english, 2002