Volume 40; Issue 20

Journal of Physics D Applied Physics

Volume 40; Issue 20

1

Structure, microstructure and physical properties of ZnO based materials in various forms: bulk, thin film and nano

Singh, Shubra, Thiyagarajan, P, Mohan Kant, K, Anita, D, Thirupathiah, S, Rama, N, Tiwari, Brajesh, Kottaisamy, M, Ramachandra Rao, M S

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 2.72 MB

english, 2007

2

Growth of SiO 2 on SiC by dry thermal oxidation: mechanisms

Vickridge, I, Ganem, J, Hoshino, Y, Trimaille, I

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 342 KB

english, 2007

3

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Butté, R, Carlin, J-F, Feltin, E, Gonschorek, M, Nicolay, S, Christmann, G, Simeonov, D, Castiglia, A, Dorsaz, J, Buehlmann, H J, Christopoulos, S, Baldassarri Höger von Hög, G, Grundy, A J D, Mosca,

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 1.25 MB

english, 2007

4

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Cimalla, V, Pezoldt, J, Ambacher, O

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 2.82 MB

english, 2007

5

Surface functionalization and biomedical applications based on SiC

Yakimova, R, Petoral, R M, Yazdi, G R, Vahlberg, C, Lloyd Spetz, A, Uvdal, K

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 815 KB

english, 2007

6

New prospects and frontiers of nanodiamond clusters

Baidakova, Marina, Vul', Alexander

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 937 KB

english, 2007

7

n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface

Kato, Hiromitsu, Makino, Toshiharu, Yamasaki, Satoshi, Okushi, Hideyo

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 786 KB

english, 2007

8

Nucleation, growth and characterization of cubic boron nitride (cBN) films

Zhang, W J, Chong, Y M, Bello, I, Lee, S T

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 2.61 MB

english, 2007

9

The mechanism of defect creation and passivation at the SiC/SiO 2 interface

Deák, Peter, Knaup, Jan M, Hornos, Tamás, Thill, Christoph, Gali, Adam, Frauenheim, Thomas

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 567 KB

english, 2007

10

High quality MPACVD diamond single crystal growth: high microwave power density regime

Achard, J, Silva, F, Tallaire, A, Bonnin, X, Lombardi, G, Hassouni, K, Gicquel, A

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 1.83 MB

english, 2007

11

Diamond as a unique high-tech electronic material: difficulties and prospects

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 167 KB

english, 2007

12

Diamond for bio-sensor applications

Nebel, Christoph E, Rezek, Bohuslav, Shin, Dongchan, Uetsuka, Hiroshi, Yang, Nianjun

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 3.71 MB

english, 2007

13

Self-assembly on silicon carbide nanomesh templates

Chen, Wei, Wee, Andrew Thye Shen

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 4.25 MB

english, 2007

14

Wide gap semiconductor microwave devices

Buniatyan, V V, Aroutiounian, V M

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 2.53 MB

english, 2007

15

Modifications of cubic SiC surfaces studied by ab initio simulations: from gas adsorption to organic functionalization

Catellani, Alessandra, Cicero, Giancarlo

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 851 KB

english, 2007

16

SiC sensors: a review

Wright, N G, Horsfall, A B

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 605 KB

english, 2007

17

Atomic scale study of the chemistry of oxygen, hydrogen and water at SiC surfaces

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 2.00 MB

english, 2007

18

Wide band gap semiconductors: present status, future prospects and frontiers

Soukiassian, Patrick G

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 34 KB

english, 2007

19

Closed-packed and well-aligned carbon nanotube films on SiC

Kusunoki, M, Suzuki, T, Honjo, C, Usami, H, Kato, H

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 2.72 MB

english, 2007

20

Growth and characterization of 3C–SiC and 2H–AlN/GaN films and devices produced on step-free 4H–SiC mesa substrates

Neudeck, P G, Du, H, Skowronski, M, Spry, D J, Trunek, A J

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 2.35 MB

english, 2007

21

Original Ge-induced phenomena on various SiC(0 0 0 1) reconstructions

Aït-Mansour, K, Dentel, D, Kubler, L, Diani, M, Derivaz, M, Bischoff, J L

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 2.50 MB

english, 2007

22

Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers

Camassel, J, Juillaguet, S

Journal:

Journal of Physics D Applied Physics

Year:

2007

Language:

english

File:

PDF, 1.46 MB

english, 2007