Volume 39; Issue 5

Journal of Semiconductors

Volume 39; Issue 5
3

Growth and characteristics of p-type doped GaAs nanowire

Year:
2018
Language:
english
File:
PDF, 1.36 MB
english, 2018
4

An improved large signal model of InP HEMTs

Year:
2018
Language:
english
File:
PDF, 1.79 MB
english, 2018
9

An advanced SEU tolerant latch based on error detection

Year:
2018
Language:
english
File:
PDF, 348 KB
english, 2018
10

Self-assembled patches in PtSi/n-Si (111) diodes

Year:
2018
Language:
english
File:
PDF, 1.56 MB
english, 2018
12

Asymmetric anode and cathode extraction structure fast recovery diode

Year:
2018
Language:
english
File:
PDF, 1.72 MB
english, 2018