Volume 20; Issue 1-2

Materials Science and Engineering: B

Volume 20; Issue 1-2

1

Editorial Board

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 33 KB

english, 1993

2

Foreword

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 84 KB

english, 1993

3

Organizers and sponsors

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 57 KB

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4

Material related issues and their characterization with a view to III–V heterojunction device optimization

Dimitris Pavlidis

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 817 KB

english, 1993

5

Materials-related reliability aspects of III–V optical devices

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 1.87 MB

english, 1993

6

Materials problems for the development of InGaAs/InAlAs HEMT technology

K. Zekentes, G. Halkias, A. Dimoulas, A. Tabata, T. Benyattou, G. Guillot, J.R. Morante, F. Peiró, A. Cornet, A. Georgakilas, A. Christou

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 950 KB

english, 1993

7

Theoretical and experimental study of failure mechanisms in r.f. reliability life tested high electron mobility transistors

W.T. Anderson, K.A. Christianson, C. Moglestue

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 246 KB

english, 1993

8

First step of degradation mechanisms in AlGaAs/GaAs laser-like structures

B. Sieber, J.L. Farvacque, J. Wang, J.W. Steeds

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 379 KB

english, 1993

9

Investigation of stability of GaAs metal/electron/semiconductor field effect transistor gate contacts by high resolution transmission electron microscopy analysis

N. Labat, Y. Danto, B. Plano, M. Chambon, J.-M. Dumas

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 562 KB

english, 1993

10

Relating μ-wave mapped data to physical parameters for MODFETs

Jürgen Braunstein, P.-J. Tasker, M. Schlechtweg, A. Hülsmann, G. Kaufel, K. Köhler

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 290 KB

english, 1993

11

Improving the quality of microelectronic devices by strained layer epitaxy

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 536 KB

english, 1993

12

Characterization of the crystallographic defect structure in selected-area epitaxial growth of GaInAs on InP by metallo-organic chemical vapour deposition

R.E. Mallard, E.J. Thrush, M.A. Gibbon, G.R. Booker

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 849 KB

english, 1993

13

Be+ ion implantation in Ga(Al)Sb layers: radiation damage

M. Pérotin, A. Pérez, H. Luquet, L. Gouskov, A. Sabir, P. Coudray

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 406 KB

english, 1993

14

Electronic structure of (In,Ga) As(Ga, Al) As strained-layer quantum wells

David J. Dunstan, Bernard Gil

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 379 KB

english, 1993

15

Evidence for non-uniform interface thickness in strained InGaAs/InP quantum wells

J. Camassel, K. Wolter, S. Juillaguet, R. Schwedler, E. Massone, B. Gallmann, J.P. Laurenti

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 438 KB

english, 1993

16

Interface properties of strained InGaAs/InP quantum wells grown by low pressure, metallo-organic vapour phase epitaxy

R. Schwedler, B. Gallmann, K. Wolter, A. Kohl, K. Leo, H. Kurz, F.H. Baumann

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 338 KB

english, 1993

17

Raman scattering in InxGa1−xAs/GaAs superlattices grown by molecular beam epitaxy

M. Constant, N. Matrullo, A. Lorriaux, R. Fauquembergue, Y. Druelle, J. Di Persio

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 395 KB

english, 1993

18

Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces: photoluminescence vs. Raman

H. Peyre, F. Alsina, S. Juillaguet, E. Massone, J. Camassel, J. Pascual, R.W. Glew

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 293 KB

english, 1993

19

Hall mobility profiling in high electron mobility transistor structures

F. Djamdji, R. Blunt

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 392 KB

english, 1993

20

Scanning photoluminescence characterization of iron-doped gas source molecular beam epitaxy indium phosphide layers

H. L'Haridon, A. Le Corre, S. Salaün, D. Lecrosnier, A. Passaret, A. Godefroy, M. Gauneau

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 914 KB

english, 1993

21

Atomic-scale simulation of lattice-mismatched heterostructures: case of CdTe/GaAs

M. Djafari Rouhani, M. Sahlaoui, A.M. Gué, D. Estève

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 253 KB

english, 1993

22

Investigation of the distribution of Fe in semi-insulating LEC-grown InP by photoluminescence and absorption imaging

G. Wittmann, F. Mosel, G. Müller, A. Seidl, A. Winnacker

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 395 KB

english, 1993

23

Scanning IR microscopy and transmission electron microscopy studies of inhomogeneities in LEC S-doped InP

N.Y. Jin, G.R. Booker, I.R. Grant

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 1.32 MB

english, 1993

24

Photoluminescence and photoacoustic investigation of residual defects in semi-insulating LEC GaAs

O. Ka, O. Oda, Y. Makita, A. Yamada

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 443 KB

english, 1993

25

Characterization of the homogeneity of semi-insulating InP by the spatially resolved photocurrent

P. Martín, J. Jiménez, M.A. González, L.F. Sanz, M. Chafai, M. Avella

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 343 KB

english, 1993

26

Raman investigation of the photocarrier properties in both undoped and Fe-doped InP substrates

B. Boudart, B. Mari, B. Prevot

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 326 KB

english, 1993

27

Effective n-type doping of InP by the neutron transmutation technique

B. Mari, B. Prevot, C. Schwab

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 294 KB

english, 1993

28

Paramagnetic anion antisites in neutron-irradiated InP: thermal recovery and photo-behaviour

A. Goltzene, B. Meyer, C. Schwab

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 296 KB

english, 1993

29

Recent advances in the assessment of GaAs substrate quality by scanning photoluminescence

K. Schohe, F. Krafft, C. Klingelhöfer, M. Garrigues, S.K. Krawczyk, J. Weyher

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 3.10 MB

english, 1993

30

From micro- to nanoelectronics: new technology requirements

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 662 KB

english, 1993

31

UVCVD dielectric films for InP-based optoelectronic devices

G. Post, Y. Le Bellégo, J.L. Courant, A. Scavennec

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 710 KB

english, 1993

32

Concepts of ultrastable metal contacts and their evaluation

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 315 KB

english, 1993

33

Raman characterization of GaAs doped with Sn by laser assisted diffusion

J. Jiménez, E. Martin, B.J. García, J. Piqueras

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 361 KB

english, 1993

34

Photoluminescence characterization of structures obtained by multipolar plasma oxidation of InP

A. Bath, A. Ahaitouf, B. Lepley, M. Belmahi, M. Remy, S. Ravelet

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 384 KB

english, 1993

35

Physicochemical characterization by means of IR absorption spectroscopy of Si3N4 thin films obtained by chemical vapour deposition assisted by in situ electrical disharge

B. Balland, J.C. Bureau, R. Botton, A. Glachant, M. Lemiti

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 305 KB

english, 1993

36

Transport processes in Au/n-InP and Au/oxide/n-InP devices treated in oxygen multipolar plasma

P. Renard, S. Ravelet, C. Simon, A. Bouziane, B. Lepley

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 307 KB

english, 1993

37

Characterization of ohmic contacts on n- and p-type GaSb

E. Villemain, S. Gaillard, M. Rolland, A. Joullie

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 225 KB

english, 1993

38

Optical non-desctructive tests for the evaluation of microprecipitates in semiconductors and devices

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 732 KB

english, 1993

39

Optical characterization of Si wafers for ultralarge-scale integration

T. Ogawa, Lu Taijing, K. Toyoda, N. Nango, T. Abe, T. Kusama

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 282 KB

english, 1993

40

Characterization of LEC GaAs by electron beam induced current analysis

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 610 KB

english, 1993

41

Determination of refractive indexes of In0.52Al0.48As on InP in the wavelength range from 250 to 1900 nm by spectroscopic ellipsometry

H.W. Dinges, H. Burkhard, R. Lösch, H. Nickel, W. Schlapp

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 287 KB

english, 1993

42

Studies of GaAs surfaces by scanning tunnelling induced photon emission

J. Horn, R. Richter, H.L. Hartnagel, C.A. Sprössler, M. Bischoff, H. Pagnia

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 390 KB

english, 1993

43

Whole wafer assessment of electronic materials by scanning photoluminescence and surface photovoltage

Maciej Bugajski, Piotr Edelman, Jacek Ornoch, Marek Wesołowski, Wojciech Lewandowski, Krzysztof Kucharski

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 1.56 MB

english, 1993

44

The effects of probe power on the spatial variation of the room temperature photoluminescence wavelength of an InGaAsP epitaxial structure

C.J.L. Moore, J. Hennessy

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 1.56 MB

english, 1993

45

The effects of probe spot size and sampling grid density on process control values derived from photoluminescence mapping

C.J.L. Moore, J. Hennessy

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 1009 KB

english, 1993

46

Microwave device for non-destructive magnetoresistance measurement of semiconducting layers

C. Druon, N. Belbounaguia, P. Tabourier, J.M. Wacrenier

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 245 KB

english, 1993

47

Low frequency noise as a characterization tool for InP- and GaAs-based double-barrier resonant tunnelling diodes

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 599 KB

english, 1993

48

New method of deep level transient spectroscopy analysis: a five emission rate method

E. Losson, B. Lepley

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 451 KB

english, 1993

49

Application of deep-level transient spectroscopy for monitoring point defects in III–V semiconductors

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 272 KB

english, 1993

50

Optoelectronic modulation spectroscopy (OEMS)—a new tool for device investigations

M. di Marco, Q.H. Wang, J.G. Swanson

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 642 KB

english, 1993

51

Investigations of the n-GaAs-electrolyte interface using time-resolved photoluminescence

O. Krüger, Ch. Jung

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 701 KB

english, 1993

52

EXMATEC'94 (Second Workshop on expert evaluation and control of compound semiconductor materials and technologies), Parma, Italy, May 17–20, 1994

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 65 KB

english, 1993

53

Author index of volume 20, issues 1–2

Journal:

Materials Science and Engineering: B

Year:

1993

File:

PDF, 64 KB

1993

54

Subject index of volume 20, issues 1–2

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 582 KB

english, 1993