Volume 24; Issue 1-3

Materials Science and Engineering: B

Volume 24; Issue 1-3

1

Editorial Board

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 50 KB

english, 1994

2

Foreword

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 71 KB

english, 1994

3

Organizers and sponsors

Journal:

Materials Science and Engineering: B

Year:

1994

File:

PDF, 44 KB

1994

4

What information on extended defects do we obtain from beam-injection methods?

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 713 KB

english, 1994

5

Electron-beam-induced activity of defects in silicon

P.R. Wilshaw, T.S. Fell, C.A. Amaku, M.D. de Coteau

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 691 KB

english, 1994

6

Theory of electron-beam-induced current and cathodoluminescence imaging of crystal defects: some new results

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 484 KB

english, 1994

7

Modulated electron-beam-induced current and cathodoluminescence

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 408 KB

english, 1994

8

Scanning deep-level transient spectroscopy investigations on gallium arsenide

O. Breitenstein

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 750 KB

english, 1994

9

EBIC and cathodoluminescence evaluation of III–V compounds

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 683 KB

english, 1994

10

Metastable electrical activity of misfit-dislocation-associated defects in Si/Si(Ge) heteroepitaxial structures: EBIC/DLTS correlation

A. Agarwal, S. Koveshnikov, H. Kirk, N. Braga, G.A. Rozgonyi

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 403 KB

english, 1994

11

Cathodoluminescence imaging of misfit dislocations in Si/SiGe epitaxial layers: the influence of transition metal contamination

V. Higgs, T.Q. Zhou, G.A. Rozgonyi

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 443 KB

english, 1994

12

Recombination activity of “clean” and contaminated misfit dislocations in Si(Ge) structures

M. Kittler, C. Ulhaq-Bouillet, V. Higgs

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 550 KB

english, 1994

13

Local investigation of the electrical properties of grain boundaries

J. Palm, D. Steinbach, H. Alexander

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 408 KB

english, 1994

14

The relation between EBIC contrast and recombination velocity of a grain boundary

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 231 KB

english, 1994

15

Apparatus for digital electron-beam-induced current imaging

Richard O. Bell, William D. Sawyer

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 479 KB

english, 1994

16

Electron-beam-induced current quantitative mapping: application to Si solar cells

A. Barhdadi, M. Barbé, A. Riviére, J.-L. Maurice

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 569 KB

english, 1994

17

Influence of surface treatment on electrical activity of dislocations and minority carrier diffusion length in cast multicrystalline silicon

A. Voigt, H.P. Strunk

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 545 KB

english, 1994

18

Two types of electron-beam-induced current behaviour of misfit dislocations in Si(Ge): experimental observations and modelling

M. Kittler, W. Seifert

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 277 KB

english, 1994

19

Dislocations and quantum transport: a possible hint for one-dimensional conductivity along dislocation lines; a fundamental mechanism for the EBIC contrast formation

Z. Bougrioua, D. Ferré, J.L. Farvacque

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 438 KB

english, 1994

20

Characterization of the strength and position of semiconductor defects by the multielectrode EBIC (OBIC) method

V.V. Sirotkin, S.I. Zaitsev

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 276 KB

english, 1994

21

An electron-beam-induced current study of dislocations in GaAs

S.A. Galloway, P.R. Wilshaw, A. Konkol

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 782 KB

english, 1994

22

Evaluation of diffusion length at different excess carrier concentrations

D. Cavalcoli, A. Cavallini

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 251 KB

english, 1994

23

On the effect of the recombination within the depletion zone on the EBIC signal at Schottky contact

Y. Beggah, N. Tabet, R.J. Tarento

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 240 KB

english, 1994

24

Cathodoluminescence imaging of dislocations in CdS: a new defocused-mirror technique

O. Vyvenko, A. Zozime, W. Schröter

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 749 KB

english, 1994

25

Cathodoluminescence and electron-beam-induced current investigations of single dislocations in GaAs

Tadeusz Wosinski, Alain Zozime, Annick Rivière

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 284 KB

english, 1994

26

Basic dislocation contrasts in SEM-CL/EBIC on III–V semiconductors

J. Schreiber, S. Hildebrandt

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 482 KB

english, 1994

27

Modulated cathodoluminescence for extended defect characterization

V.A. Kireev, I.I. Razgonov, E.B. Yakimov

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 257 KB

english, 1994

28

Determination of the lateral distribution of electron-hole pairs generated by an electron beam in Al0.4Ga0.6As by cathodoluminescence

D. Araújo, J.-M. Bonard, G. Oelgart, J.-D. Ganière, F. Morier-Genoud, F.-K. Reinhart

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 525 KB

english, 1994

29

Quantitative studies of beam-induced defects in III–V compounds by cathodoluminescence and transmission electron microscopy

D.B. Holt, E. Napchan, L. Lazzarini, M. Urchulutegui, G. Salviati

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 688 KB

english, 1994

30

Cathodoluminescence from defects in electron-irradiated InP

M. Urchulutegui, P. Gómez, J. Piqueras, F. Dworschak

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 314 KB

english, 1994

31

Study of defects in implanted GaAs: Te by cathodoluminescence

B. Méndez, J. Piqueras, A. Cavallini, B. Fraboni

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 249 KB

english, 1994

32

Cathodoluminescence dependence on electron beam diameter

S. Achour, M.T. Benlahrache, A. Harabi, N. Tabet

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 256 KB

english, 1994

33

Luminescence from rod-like defects and hydrogen related centres in silicon

E.C. Lightowlers, L. Jeyanathan, A.N. Safonov, V. Higgs, G. Davies

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 697 KB

english, 1994

34

Mapping of defects and their recombination strenght by a light-beam-induced current in silicon wafers

Santo Martinuzzi, Michael Stemmer

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 795 KB

english, 1994

35

Determination of the electronic structure of grain boundaries by energy-resolved photoconductivity measurements

S. Pizzini, M. Acciarri, S. Binetti, S. Acerboni

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 768 KB

english, 1994

36

Light-beam-induced transient spectroscopy of oxidation-induced stacking faults in silicon

J.A. Davidson, J.H. Evans, A.R. Peaker

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 300 KB

english, 1994

37

Optical characterization of deep states associated with oxidation-induced stacking faults in silicon

A. Castaldini, A. Cavallini, J.H. Evans, I.D. Hawkins, A.R. Peaker, M. Vandini

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 401 KB

english, 1994

38

Optical-beam-induced current and photoluminescence techniques for localization of crystallographic defects in optoelectronic devices

P. Montangero, G.A. Azzini, R. De Franceschi, M. Mancini, L. Serra

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 589 KB

english, 1994

39

Monte Carlo simulation of the minority-carrier recombination at and around grain boundaries surrounded by a denuded zone revealed by light-beam-induced current mapping

Michael Stemmer

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 323 KB

english, 1994

40

Spatially resolved photoluminescence and electron-beam-induced current studies of a coincidence ϵ = 25 silicon bicrystal

R. Rizk, F. Cruege, R. Madelon, G. Nouet

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 331 KB

english, 1994

41

LBIC and diffusion length mapping applied to the investigation of gettering by aluminium diffusion in multicrystalline silicon

O. Porre, M. Stemmer, M. Pasquinelli

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 331 KB

english, 1994

42

Measurements of carrier diffusion length in processed wafers: correlation with the electrical behaviour

M.L. Polignano, L. Maitre, G. Queirolo

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 621 KB

english, 1994

43

Characterization of implanted silicon wafers by the non-linear photoreflectance technique

B.C. Forget, D. Fournier

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 315 KB

english, 1994

44

Scanning force microscopy of semiconductor materials and devices

L.J. Balk, M. Maywald

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 646 KB

english, 1994

45

Scanning electron acoustic microscopy of electronic materials

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 441 KB

english, 1994

46

Cross-sectional scanning tunneling microscopy on semiconductor heterostructures

M.B. Johnson, H.W.M. Salemink

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 457 KB

english, 1994

47

Electrical characterization of integrated circuits by scanning force microscopy

C. Böhm, C. Roths, U. Müller, A. Beyer, E. Kubalek

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 395 KB

english, 1994

48

Electron-beam-induced current and atomic force microscopy studies on silicon etch steps created by reactive ion etching and reactive ion beam etching

G. Jäger-Waldau, H.-U. Habermeier, G. Zwicker, E. Bucher

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 278 KB

english, 1994

49

Photothermal scanning near-field microscopy

M. Stopka, E. Oesterschulze, J. Schulte, R. Kassing

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 242 KB

english, 1994

50

Application aspects of beam injection methods

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 262 KB

english, 1994

51

Author index of volume 24

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 46 KB

english, 1994

52

Subject index of volume 24

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 442 KB

english, 1994