Volume 51; Issue 1-3

Materials Science and Engineering: B

Volume 51; Issue 1-3

1

Recent advances in mid-infrared (3–6 μm) emitters

R.M Biefeld, A.A Allerman, S.R Kurtz

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 189 KB

english, 1998

2

Near field optical spectroscopy of resonant tunnelling light-emitters

Mieke Mielants, C Van Hoof, C Stuer, E Goovaerts, G Borghs

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 98 KB

english, 1998

3

Novel type II strained layer superlattices for long wavelength infrared detectors

D.N Talwar, B Jogai, J.P Loehr

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 206 KB

english, 1998

4

Blue–green microcavity light emitting diode with monolithic MgZnSSe/ZnSSe Bragg reflectors

P Uusimaa, A Salokatve, K Rakennus, A Rinta-Möykky, M Pessa

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 201 KB

english, 1998

5

Optical properties and lasing of ZnMgSSe/ZnSSe/ZnSe heterostructures grown by MOVPE

A.L Gurskii, E.V Lutsenko, G.P Yablonskii, H Hamadeh, H Kalisch, B Schineller, M Heuken

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 157 KB

english, 1998

6

RT exciton waveguiding and lasing in submonolayer CdSe–(Zn, Mg)(S, Se) structures

I.L Krestnikov, S.V Ivanov, P.S Kop'ev, N.N Ledentsov, M.V Maximov, A.V Sakharov, S.V Sorokin, A Rosenauer, D Gerthsen, C.M Sotomayor Torres, D Bimberg, Zh.I Alferov

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 455 KB

english, 1998

7

Vertical carrier transport in InP-based quantum well laser structures

S. Marcinkevičius, K. Fröjdh, H. Hillmer, R. Lösch, U. Olin

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 102 KB

english, 1998

8

Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diode

B Schineller, Y Junas, M Heuken, K Heime

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 1.22 MB

english, 1998

9

Multiwafer MOVPE technology for low dimensional Ga-Al-In-N structures

R Beccard, R Niebuhr, B Wachtendorf, D Schmitz, H Jürgensen

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 806 KB

english, 1998

10

Investigation of inhomogeneities in (Al, Ga, In)N heterostructures by STEM and cathodoluminescence

H Lakner, Q Liu, G Brockt, A Radefeld, A Meinert, F Scholz

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 2.99 MB

english, 1998

11

First principles studies of point defects and impurities in cubic boron nitride

J.L.P Castineira, J.R Leite, L.M.R Scolfaro, R Enderlein, J.L.A Alves, H.W Leite Alves

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 272 KB

english, 1998

12

Organic molecular beam deposition: technology and applications in electronics and photonics

Achim Böhler, Peter Urbach, Dirk Ammermann, Wolfgang Kowalsky

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 418 KB

english, 1998

13

Review of thin film technology in automobile industry

Motofumi Suzui, Shizuo Tokito, Yasunori Taga

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 305 KB

english, 1998

14

Gigahertz microcavity light emitters using resonant tunneling diodes

C Van Hoof, H De Neve, I Romandic, E Goovaerts, G Borghs

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 102 KB

english, 1998

15

Performance and design of vertical, ballistic, heterostructure field-effect transistors

Lars-Erik Wernersson, Andrej Litwin, Lars Samuelson, Hongqi Xu

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 382 KB

english, 1998

16

Photon assisted hypersonic phonon emission from terahertz-driven two-dimensional electron gases

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 126 KB

english, 1998

17

Effect of temperature on GaAs/AlGaAs multiple quantum well solar cells

E Aperathitis, C.G Scott, D Sands, V Foukaraki, Z Hatzopoulos, P Panayotatos

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 132 KB

english, 1998

18

Light emitting diode arrays for consumer and medical applications

Andrew Rys, Tadeusz Piotrowski, Radoslaw Sobczynski

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 542 KB

english, 1998

19

Lateral-junction light emitting devices grown by molecular beam epitaxy on GaAs (311)A-oriented substrates

P.O Vaccaro, H Ohnishi, K Fujita

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 165 KB

english, 1998

20

Novel spontaneous emission control using 3-dimensional photonic bandgap crystal cavity

Hideki Hirayama, Tetsuko Hamano, Yoshinobu Aoyagi

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 193 KB

english, 1998

21

Si and C δ-doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlattices

C Jagadish, G Li, M.B Johnston, M Gal

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 91 KB

english, 1998

22

Gain characteristics of InP/InGaAs heterostructure avalanche photodiode

Kyung-Sook Hyun, Chan-Yong Park, E.H Lee

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 148 KB

english, 1998

23

GaAs/AlGaAs based electrically tunable RCE photodiode

J Waclawek, J Kováč, B Rhenländer, V Gottschalch, J Ŝkriniarová

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 136 KB

english, 1998

24

Temperature effects in semiconductor quantum dot lasers

S Fafard, K Hinzer, A.J Springthorpe, Y Feng, J McCaffrey, S Charbonneau, E.M Griswold

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 475 KB

english, 1998

25

InAs dots grown on InP (001) by droplet hetero-epitaxy using OMVPE

Y Nonogaki, T Iguchi, S Fuchi, Y Fujiwara, Y Takeda

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 760 KB

english, 1998

26

Time-resolved spectroscopy of InAs quantum dots using one-side modulation-doping technique: renormalization and screening

Joo In Lee, Hyung Gyoo Lee, Eun-joo Shin, Sungkyu Yu, Kasi Viswanath, Dongho Kim, Gukhyung Ihm

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 136 KB

english, 1998

27

A new approach to ZnCdSe quantum dots

B.P Zhang, T Yasuda, W.X Wang, Y Segawa, K Edamatsu, T Itoh, H Yaguchi, K Onabe

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 266 KB

english, 1998

28

The mechanism of light emission from porous silicon: where are we 7 years on?

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 408 KB

english, 1998

29

Charge injection into porous silicon electroluminescent devices

G Wakefield, P.J Dobson, J.L Hutchison, Y.Y Foo

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 795 KB

english, 1998

30

Electronic structure of nanocrystalline/amorphous silicon: a novel quantum size effect

S Nomura, T Iitaka, X Zhao, T Sugano, Y Aoyagi

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 153 KB

english, 1998

31

Fabrication and characterisation of ultra sharp silicon field emitters

S.E Huq, G.H Grayer, S.W Moon, P.D Prewett

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 1.03 MB

english, 1998

32

Size control of Si nanocrystallites formed in amorphous Si matrix by Er-doping

Xinwei Zhao, Shuji Komuro, Satoshi Fujita, Hideo Isshiki, Yoshinobu Aoyagi, Takuo Sugano

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 120 KB

english, 1998

33

Splitting of porous silicon microcavity mode due to the interaction with Si–H vibrations

G Mattei, A Marucci, V.A Yakovlev

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 103 KB

english, 1998

34

Two ways of porous Si photoluminescence excitation

T.V Torchinskaya, N.E Korsunskaya, L.Yu Khomenkova, M.K Sheinkman, N.P Baran, A Misiuk, B Surma, B Dzhumaev

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 110 KB

english, 1998

35

Selective epitaxial growth of strained SiGe/Si for optoelectronic devices

L Vescan, T Stoica, M Goryll, K Grimm

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 471 KB

english, 1998

36

Molecular beam epitaxy of SiGe heterostructures using a newly designed Si effusion cell

H Yaguchi, T Yamamoto, Y Shiraki

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 95 KB

english, 1998

37

Proximal probe-based fabrication of nanometer-scale devices

P.M Campbell, E.S Snow

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 345 KB

english, 1998

38

Characterization of quantum structures by atomic-force microscopy

D Wüllner, A Schlachetzki, P Bönsch, H.-H Wehmann, T Schrimpf, R Lacmann, S Kipp

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 1.43 MB

english, 1998

39

Characterisation of InGaAs/InP microscopic Hall probe arrays with a 2DEG active layer

V Cambel, D Gregušová, P Eliáš, S Hasenöhrl, B Olejnı́ková, J Novák, T Schäpers, K Neurohr, A Fox

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 134 KB

english, 1998

40

Possibility of subsurface investigations by scanning tunnelling microscope

V.Z Chorniy, C.J Adkins

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 674 KB

english, 1998

41

Observation of surface potential at nanometer scale by electrostatic force microscopy (EFM) with large signals

G Leveque, J Bonnet, A Tahraoui, P Girard

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 291 KB

english, 1998

42

Mobility (106 cm2 V−1 s−1) of 2DEGs, 30 nm from ex situ patterned GaAs regrowth interfaces

T.M Burke, D.A Ritchie, E.H Linfield, M.P O'Sullivan, J.H Burroughes, M.L Leadbeater, S.N Holmes, C.E Norman, A.J Shields, M Pepper

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 182 KB

english, 1998

43

Fabrication of independently contacted and tuneable 2D-electron-hole systems in GaAs/AlGaAs double quantum wells

H Rubel, A Fischer, W Dietsche, K Von Klitzing, K Eberl

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 579 KB

english, 1998

44

Experimental and theoretical investigations of clusters in the magneto-fingerprints of Sinai billiards

R.P Taylor, A.P Micolich, R Newbury, T.M Fromhold, C Dettmann, C.R Tench

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 185 KB

english, 1998

45

Observation of a new type of giant magnetoresistance with possible sensor applications

N Overend, A Nogaret, B.L Gallagher, P.C Main, M Henini, R Wirtz, R Newbury, C Marrows, M.A Howson, S.P Beaumont

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 160 KB

english, 1998

46

Characteristics of GaAs/AlAs superlattice structures grown on (311) oriented GaAs substrates by molecular beam epitaxy

S.F Yoon, P.H Zhang

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 115 KB

english, 1998

47

Self-assembled, very long II–VI semiconductor quantum wires

B.P. Zhang, W.X. Wang, T. Yasuda, Y. Segawa, H. Yaguchi, K. Onabe, K. Edamatsu, T. Itoh

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 753 KB

english, 1998

48

Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE

Hisao Nakashima, Takehiko Kato, Kenzo Maehashi, Takehiro Nishida, Yoshiji Inoue, Toshikazu Takeuchi, Koichi Inoue, Peter Fischer, Jürgen Christen, Marius Grundmann, Dieter Bimberg

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 414 KB

english, 1998

49

Absence of ground state PLE peak in crescent-shaped AlGaAs/GaAs quantum wire superlattices

Xue-Lun Wang, Mutsuo Ogura, Hirofumi Matsuhata

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 640 KB

english, 1998

50

Hydride vapour phase epitaxy for nanostructures

E Rodrı́guez Messmer, S Lourdudoss, J Ahopelto, H Lipsanen, K Hieke, J.-O Wesström, J.P Reithmaier, K Kerkel, A Forchel, W Seifert, N Carlsson, L Samuelson

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 877 KB

english, 1998

51

CAD tools and foundries to boost microsystems development

B Courtois, J.M Karam, M Lubaszewski, V Szekely, M Rencz, K Hofmann, M Glesner

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 845 KB

english, 1998

52

Micro and nanotechnologies: a challenge on the way forward to new markets

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 264 KB

english, 1998

53

Micromachining and mechanical properties of GaInAs/InP microcantilevers

P Mounaix, P Delobelle, X Mélique, L Bornier, D Lippens

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 383 KB

english, 1998

54

Characterisation of a low-voltage actuated gold microswitch

P Attia, G Tremblay, R Laval, P Hesto

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 269 KB

english, 1998

55

Bulk micromachining characterization of 0.2 μm HEMT MMIC technology for GaAs MEMS design

R.P Ribas, J.L Leclercq, J.M Karam, B Courtois, P Viktorovitch

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 932 KB

english, 1998

56

Integration of SALICIDE process for deep-submicron CMOS technology: effect of nitrogen/argon-amorphized implant on SALICIDE formation

C.S Ho, K.L Pey, H Wong, R.P.G Karunasiri, S.J Chua, K.H Lee, L.H Chan

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 255 KB

english, 1998

57

Index

Journal:

Materials Science and Engineering: B

Year:

1998

File:

PDF, 37 KB

1998

58

Index

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 61 KB

english, 1998

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