Volume 75; Issue 2-3

3

Applications of defect engineering in InP-based structures

Year:
2000
Language:
english
File:
PDF, 164 KB
english, 2000
6

MBE growth and characterisation of InGaAs quantum dot lasers

Year:
2000
Language:
english
File:
PDF, 329 KB
english, 2000
7

Current–voltage characteristics in periodically-driven miniband superlattices

Year:
2000
Language:
english
File:
PDF, 133 KB
english, 2000
9

Semi-insulating GaAs grown in outer space

Year:
2000
Language:
english
File:
PDF, 159 KB
english, 2000
21

Raman characterization of ion beam etched Hg1−xCdxTe surface

Year:
2000
Language:
english
File:
PDF, 91 KB
english, 2000
22

Gas source MBE growth of GaN-related novel semiconductors

Year:
2000
Language:
english
File:
PDF, 148 KB
english, 2000
24

Growth of GaN on Si substrates using BP thin layer as a buffer

Year:
2000
Language:
english
File:
PDF, 251 KB
english, 2000
25

The doping process of p-type GaN films

Year:
2000
Language:
english
File:
PDF, 107 KB
english, 2000
26

Influence of precipitates on GaN epilayer quality

Year:
2000
Language:
english
File:
PDF, 698 KB
english, 2000
28

Characterization of GaN grown by RF plasma MBE

Year:
2000
Language:
english
File:
PDF, 181 KB
english, 2000
31

ZnO as a novel photonic material for the UV region

Year:
2000
Language:
english
File:
PDF, 410 KB
english, 2000
32

Preface

Year:
2000
Language:
english
File:
PDF, 36 KB
english, 2000
33

Index

Year:
2000
File:
PDF, 35 KB
2000
34

Index

Year:
2000
Language:
english
File:
PDF, 58 KB
english, 2000