Volume 38; Issue 5

Microelectronics Reliability

Volume 38; Issue 5

1

Book review

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 84 KB

english, 1998

2

The electrical properties of Al/Ni/Ge/n-GaAs interfaces

L. Dávid, B. Kovács, I. Mojzes, Zs. Kincses, L. Dobos

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 471 KB

english, 1998

3

Use of C-SAM acoustical microscopy in package evaluations and failure analysis

S Atkins, L Teems, W Rowe, P Selby, R Vaughters

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 1.17 MB

english, 1998

4

Better graphs for dependability modeling

Winfrid G. Schneeweiss

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 564 KB

english, 1998

5

Facet heating and axial temperature profiles in high-power GaAlAs/GaAs laser diodes

U. Menzel, R. Puchert, A. Bärwolff, A. Lau

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 236 KB

english, 1998

6

Book review

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 73 KB

english, 1998

7

A different approach to the analysis of data in life-tests of laser diodes

A. Bonfiglio, M.B. Casu, F. Magistrali, M. Maini, G. Salmini, M. Vanzi

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 257 KB

english, 1998

8

Extraction method for source series resistance and transverse field mobility reduction coefficient using the MOSFET saturation region

A.M. Ionescu, A. Chovet, A.E. Popescu, A. Rusu, D. Steriu

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 365 KB

english, 1998

9

Transient behavior and low VDS hysteresis in PD SOI MOSFETs

L.M Perron, C Hamaguchi, A.L Lacaita, S Maegawa, Y Yamaguchi

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 389 KB

english, 1998

10

Availability modeling of energy management systems

Ricardo M. Fricks, Kishor S. Trivedi

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 484 KB

english, 1998

11

Influence of the silicon nitride oxidation on the performances of NCLAD isolation

A. Tixier, V. Senez, B. Baccus, A. Marmiroli, P. Colpani, A. Rebora, G.P. Carnevale

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 957 KB

english, 1998

12

Carrier mobility in inversion layers of Si–thin Ta2O5 structures

E. Atanassova, T. Dimitrova

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 242 KB

english, 1998

13

Electrical properties of thin Ta2O5 films obtained by thermal oxidation of Ta on Si

E. Atanassova, D. Spassov

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 275 KB

english, 1998

14

Characterization of the silicon nitride–thermal oxide interface in oxide–nitride–oxide structures by ELS, XPS, ellipsometry, and numerical simulation

V.A. Gritsenko, S.N. Svitasheva, I.P. Petrenko, Yu.N. Novikov, Yu.N. Morokov, Hei Wong, R.W.M. Kwok, R.W.M. Chan

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 330 KB

english, 1998

15

Long-term base current instability in AlGaAs/GaAs HBTs: physical mechanisms, modeling, and SPICE simulation

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 1.50 MB

english, 1998