Volume 45; Issue 2

Microelectronics Reliability

Volume 45; Issue 2

1

A MOSFET power supply clamp with feedback enhanced triggering for ESD protection in advanced CMOS technologies

Jeremy C. Smith, Gianluca Boselli

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 950 KB

english, 2005

2

Test circuits for fast and reliable assessment of CDM robustness of I/O stages

W. Stadler, K. Esmark, K. Reynders, M. Zubeidat, M. Graf, W. Wilkening, J. Willemen, N. Qu, S. Mettler, M. Etherton, D. Nuernbergk, H. Wolf, H. Gieser, W. Soppa, V. De Heyn, M. Natarajan, G. Groesenek

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 383 KB

english, 2005

3

Capacitively coupled transmission line pulsing cc-TLP––a traceable and reproducible stress method in the CDM-domain

Heinrich Wolf, Horst Gieser, Wolfgang Stadler, Wolfgang Wilkening

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 422 KB

english, 2005

4

Real-world printed circuit board ESD failures

Andrew Olney, Brad Gifford, John Guravage, Alan Righter

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 550 KB

english, 2005

5

ESD SPICE model and measurements for a hard disk drive

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 695 KB

english, 2005

6

Reliability of vacuum packaged MEMS gyroscopes

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 455 KB

english, 2005

7

Yale N. Patt, Sanjay J. Patel, ,Introduction to Computing Systems: From Bits and Gates to C and Beyond Second edition (2004) McGraw-Hill Higher Education,Boston 0-07-121503-4 Softcover, pp. 632, plus XXIV.

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 217 KB

english, 2005

8

A 2-bit highly scalable nonvolatile memory cell with two electrically isolated charge trapping sites

Tsz Yin Man, Mansun Chan

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 525 KB

english, 2005

9

A note on trap recombination in high voltage device structures

Vitezslav Benda

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 325 KB

english, 2005

10

Guest editorial

Wolfgang Stadler

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 204 KB

english, 2005

11

Advanced rail clamp networks for ESD protection

Michael Stockinger, James W. Miller, Michael G. Khazhinsky, Cynthia A. Torres, James C. Weldon, Bryan D. Preble, Martin J. Bayer, Matthew Akers, Vishnu G. Kamat

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 454 KB

english, 2005

12

TLP analysis of 0.125 μm CMOS ESD input protection circuit

Michael Chaine, James Davis, Al Kearney

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 423 KB

english, 2005

13

Comprehensive ESD protection for RF inputs

Sami Hyvonen, Sopan Joshi, Elyse Rosenbaum

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 498 KB

english, 2005

14

ESD–RF co-design methodology for the state of the art RF-CMOS blocks

V. Vassilev, S. Thijs, P.L. Segura, P. Wambacq, P. Leroux, G. Groeseneken, M.I. Natarajan, H.E. Maes, M. Steyaert

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 548 KB

english, 2005

15

Single event transient effects in a voltage reference

P.C. Adell, R.D. Schrimpf, C.R. Cirba, W.T. Holman, X. Zhu, H.J. Barnaby, O. Mion

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 393 KB

english, 2005

16

Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors

N.A. Hastas, N. Archontas, C.A. Dimitriadis, G. Kamarinos, T. Nikolaidis, N. Georgoulas, A. Thanailakis

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 323 KB

english, 2005

17

Evaluation of wire bonding performance, process conditions, and metallurgical integrity of chip on board wire bonds

Daniel T. Rooney, DeePak Nager, David Geiger, Dongkai Shanguan

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 436 KB

english, 2005

18

Data communication

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 214 KB

english, 2005

19

Percolative approach for failure time prediction of thin film interconnects under high current stress

E. Misra, Md M. Islam, Mahbub Hasan, H.C. Kim, T.L. Alford

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 133 KB

english, 2005

20

Vadim Ivanov, Igor Filanovsky, Operational Amplifier Speed and Accuracy Improvement: Analog Circuit Design with Structural Methodology, Kluwer Academic Publishers, Boston, 2004, Hardcover, pp. 194, plus XIV, euro 104, ISBN 1-4020-7772-6

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 211 KB

english, 2005

21

Transient analysis of the impact stage of wirebonding on Cu/low-K wafers

Chang-Lin Yeh, Yi-Shao Lai

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 706 KB

english, 2005

22

A new multi-finger SCR-based structure for efficient on-chip ESD protection

F. Azaı̈s, B. Caillard, S. Dournelle, P. Salomé, P. Nouet

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 802 KB

english, 2005

23

Transient latch-up: experimental analysis and device simulation

S. Bargstädt-Franke, W. Stadler, K. Esmark, M. Streibl, K. Domanski, H. Gieser, H. Wolf, W. Bala

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 411 KB

english, 2005

24

High abstraction level permutational ESD concept analysis

M. Streibl, F. Zängl, K. Esmark, R. Schwencker, W. Stadler, H. Gossner, S. Drüen, D. Schmitt-Landsiedel

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 413 KB

english, 2005

25

A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I—ESD

Steven H. Voldman

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 519 KB

english, 2005

26

10.1016/s0026-2714(04)00151-9

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 204 KB

english, 2005

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски