Volume 35; Issue 8

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Applied Physics Letters
Volume 35; Issue 8

Applied Physics Letters

Volume 35; Issue 8

1

Carrier recombination through donors/acceptors in heavily doped silicon

Hu, Chenming, Oldham, William G.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 590 KB

english, 1979

2

Measurement of the input impedance of a RF biased SQUID

Bordoni, F., Carelli, P., Modena, I., Romani, G. L.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 435 KB

english, 1979

3

Optically controllable millimeter wave phase shifter

DeFonzo, A. P., Lee, Chi H., Mak, P. S.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 452 KB

english, 1979

4

A new sensitive microwave bolometer heterodyne receiver

Nimtz, G., Schlicht, B., Lehmann, H., Tyssen, E.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 392 KB

english, 1979

5

Hall effect in reactively sputtered Cu2S

Leong, John Y., Yee, Jick H.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 396 KB

english, 1979

6

Six-beam irradiation and implosion of laser fusion targets: Laser focus dependence

Thorsos, E. I., Bristow, T. C., Delettrez, J. A., Soures, J. M., Rizzo, J. E.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 472 KB

english, 1979

7

Substrate temperature limits for epitaxy of InP by MBE

Norris, M. T., Stanley, C. R.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 541 KB

english, 1979

8

Temperature-compensated PbTiO3 ceramics for surface acoustic wave applications

Ito, Yukio, Takeuchi, Hiroshi, Jyomura, Shigeru, Nagatsuma, Kazuyuki, Ashida, Sakichi

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 473 KB

english, 1979

9

Photoluminescence of gallium arsenide encapsulated with aluminum nitride and silicon nitride

Birey, Hulya, Pak, Sung-Jae, Sites, J. R.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 447 KB

english, 1979

10

Dynamic behavior of mode-locked Nd : YAG laser annealing in ion-implanted Si, GaAs, and GaP

Murakami, Kouichi, Gamo, Kenji, Namba, Susumu, Kawabe, Mitsuo, Aoyagi, Yoshinobu

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 476 KB

english, 1979

11

Electromagnetic acoustic resonance in metals and alloys

Spencer, E. G., Schmidt, P. H., Sansalone, F. J.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 512 KB

english, 1979

12

Isolation of type-2 magnetic contrast in the SEM by a lock-in technique

Wells, Oliver C.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 443 KB

english, 1979

13

cw Ar+ laser annealing of optically active impurities in nitrogen-implanted AlxGa1−xAs (x=0.58)

Makita, Yunosuke, Yokota, Masaki, Nojiri, Hidetoshi, Tsurushima, Toshio, Tanoue, Hisao, Kanayama, Toshihiko, Shimada, Jun-ichi

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 500 KB

english, 1979

14

A new InGaAsP/InP dual-wavelength LED

Sakai, Shiro, Aoki, Takahiro, Amemiya, Yoshifumi, Umeno, Masayoshi

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 309 KB

english, 1979

15

Thin films of LiNbO3, doped with Na+ and Co2++Zr4+, grown by liquid-phase epitaxy

Neurgaonkar, R.R., Kalisher, M.H., Staples, E. J., Lim, T. C.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 400 KB

english, 1979

16

Vapor-phase epitaxial InxGa1−xAs on (100), (111)A, and (111)B InP substrates

Kanbe, Hiroshi, Yamauchi, Yoshiharu, Susa, Nobuhiko

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 418 KB

english, 1979

17

The depth of defect annihilation in silicon by pulse laser annealing: Experiment and theory

Jastrzebski, L., Bell, A. E., Wu, C. P.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 529 KB

english, 1979

18

Alloying of Au layers and redistribution of Cr in GaAs

Magee, T. J., Peng, J., Hong, J. D., Deline, V. R., Evans, C. A.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 442 KB

english, 1979

19

Short-channel MOS FET’s fabricated by self-aligned ion implantation and laser annealing

Koyanagi, M., Tamura, H., Miyao, M., Hashimoto, N., Tokuyama, T.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 396 KB

english, 1979

20

Erratum: Long-term Hall-type conversion by vacancy diffusion in Hg1−xCdxTe at room temperature

Nimtz, G., Schlicht, B., Dornhaus, R.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 245 KB

english, 1979

21

Laser-induced vapor deposition of silicon

Hanabusa, M., Namiki, Akira, Yoshihara, Keitaro

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 336 KB

english, 1979

22

Tunable submillimeter sources applied to the excited state rotational spectroscopy and kinetics of CH3F

Blumberg, W. A. M., Fetterman, H. R., Peck, D. D., Goldsmith, P. F.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 589 KB

english, 1979

23

Methods for minimizing silicon regrowth in aluminum films

Learn, Arthur J., Nowicki, R. S.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 503 KB

english, 1979

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