Volume 37; Issue 5

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Applied Physics Letters
Volume 37; Issue 5

Applied Physics Letters

Volume 37; Issue 5

1

Precipitation and redistribution of oxygen in Czochralski‐grown silicon

Shimura, Fumio, Tsuya, Hideki, Kawamura, Tsutomu

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 592 KB

english, 1980

2

Silicon graphoepitaxy using a strip‐heater oven

Geis, M. W., Antoniadis, D. A., Silversmith, D. J., Mountain, R. W., Smith, Henry I.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 566 KB

english, 1980

3

Epitaxially grown monocrystalline garnet cathode-ray tube phosphor screens

Robertson, J. M., van Tol, M. W.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 458 KB

english, 1980

4

The effects of cold rolling on fluxoid pinning in a superconducting metallic glass

Koch, C. C., Scarbrough, J. O., Kroeger, D. M., DasGupta, A.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 481 KB

english, 1980

5

Schottky barrier formation by laser irradiation processing

Yang, E. S., Wu, C. M., Vollmer, H. J., Sedgewick, T. O., Hodgson, R. T.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 380 KB

english, 1980

6

Effect of electric field on deep-level transients in GaAs and GaP

Makram-Ebeid, S.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 486 KB

english, 1980

7

High-performance backside-illuminated Hg0.78Cd0.22Te/CdTe (λCO=10 μm) planar diodes

Chu, M., Vanderwyck, A. H. B., Cheung, D. T.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 481 KB

english, 1980

8

Plasma etching characteristics of sputtered MoSi2 films

Chow, T. P., Steckl, A. J.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 465 KB

english, 1980

9

Cr profiles in semi-insulating GaAs after annealing with and without SiO2 encapsulants in a H2-As4 atmosphere

Eu, V., Feng, M., Henderson, W. B., Kim, H. B., Whelan, J. M.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 492 KB

english, 1980

10

Electron-pulsed diffusion of Se in GaAs

Davies, D. Eirug, Ryan, Thomas G., Lorenzo, J. P.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 402 KB

english, 1980

11

Pulsed laser irradiation of lead-implanted single-crystal copper films

Rimini, E., Baglin, J. E. E.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 496 KB

english, 1980

12

Photoelectrochemistry with p-Si electrodes: Effects of inversion

Turner, J. A., Manassen, J., Nozik, A. J.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 481 KB

english, 1980

13

Statistical characterization of the self-induced intensity modulation exhibited by AlGaAs junction lasers with proton stripes

Paoli, Thomas L.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 435 KB

english, 1980

14

Highly oriented zinc oxide films grown by the oxidation of diethylzinc

Ghandhi, Sorab K., Field, Robert J., Shealy, James R.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 390 KB

english, 1980

15

Hot-carrier relaxation in photoexcited In0.53Ga0.47As

Shah, Jagdeep, Leheny, R. F., Nahory, R. E., Pollack, M. A.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 418 KB

english, 1980

16

Open-circuit voltage of induced-junction solar cells

Alam, M. K., Yeow, Y. T.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 310 KB

english, 1980

17

Observation of surface evaporation of Hg from HgTe crystals by means of energetic oxygen ion backscattering

Takita, K., Masuda, K., Kudo, H., Seki, S.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 415 KB

english, 1980

18

Surface and thickness effects in the luminescence of amorphous Si:H

Rehm, W., Fischer, R., Beichler, J.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 434 KB

english, 1980

19

Raman shifting of long-pulse-length XeF∗ laser radiation

Trainor, Daniel W., Hyman, H. A., Itzkan, Irving, Heinrichs, R. M.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 366 KB

english, 1980

20

Diffraction-grating-enhanced light emission from tunnel junctions

Kirtley, J. R., Theis, T. N., Tsang, J. C.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 399 KB

english, 1980

21

An electrochemical transistor using a solid electrolyte

Hetrick, Robert E., Vassell, W. C.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 444 KB

english, 1980

22

Annealing of damage and redistribution of Cr in boron-implanted Si3N4-capped GaAs

Magee, T. J., Lee, K. S., Ormond, R., Blattner, R. J., Evans, C. A.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 449 KB

english, 1980

23

Detection of monolayer quantities of oxygen on silicon using energy-dispersive x-ray spectrometry

Musket, R. G., Strausser, Y. E.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 410 KB

english, 1980

24

Si and Ge (111) surface structures after pulsed laser annealing

Zehner, D. M., White, C. W., Ownby, G. W.

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 564 KB

english, 1980

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