Volume 45; Issue 4

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Applied Physics Letters
Volume 45; Issue 4

Applied Physics Letters

Volume 45; Issue 4

1

AgGaS2 infrared parametric oscillator

Fan, Yuan Xuan, Eckardt, R. C., Byer, R. L., Route, R. K., Feigelson, R. S.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 459 KB

english, 1984

2

Effect of oxygen contamination on the properties of cosputtered tantalum silicide

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 524 KB

english, 1984

3

Second harmonic generation of 2-methyl-4-nitroaniline by a neodymium: yttrium aluminum garnet laser with a tapered slab-type optical waveguide

Sasaki, K., Kinoshita, T., Karasawa, N.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 357 KB

english, 1984

4

CO2-laser radiation absorption by metal gratings

Ursu, I., MihaÌilescu, I. N., Popa, Al., Prokhorov, A. M., Konov, V. I., Ageev, V. P., Tokarev, V. N.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 477 KB

english, 1984

5

Far-field supermode patterns of a multiple-stripe quantum well heterostructure laser operated (â¼7330 AÌ, 300 K) in an external grating cavity

Epler, J. E., Holonyak, N., Burnham, R. D., Paoli, T. L., Streifer, W.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 450 KB

english, 1984

6

Study of silicon contamination and near-surface damage caused by CF4/H2 reactive ion etching

Oehrlein, G. S., Tromp, R. M., Lee, Y. H., Petrillo, E. J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 469 KB

english, 1984

7

Room-temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laser

Iga, K., Ishikawa, S., Ohkouchi, S., Nishimura, T.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 460 KB

english, 1984

8

Substrate effects on the threshold voltage of GaAs field-effect transistors

Winston, H. V., Hunter, A. T., Olsen, H. M., Bryan, R. P., Lee, R. E.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 487 KB

english, 1984

9

Microwave-induced constant-voltage steps at one volt from a series array of Josephson junctions

Niemeyer, J., Hinken, J. H., Kautz, R. L.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 501 KB

english, 1984

10

Photoconductivity of sputtered CuxS films

McLeod, Paul S., Partain, Larry D., Sawyer, Dave E., Peterson, Terry M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 458 KB

english, 1984

11

Carrier energy relaxation in In0.53Ga0.47As determined from picosecond luminescence studies

Kash, Kathleen, Shah, Jagdeep

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 487 KB

english, 1984

12

High-speed analog and digital modulation of 1.51-μm wavelength, three-channel buried crescent InGaAsP lasers

Eisenstein, G., Koren, U., Tucker, R. S., Kasper, B. L., Gnauck, A. H., Tien, P. K.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 464 KB

english, 1984

13

Application of ion implantation for doping of polyacetylene films

Koshida, Nobuyoshi, Wachi, Yoshio

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 415 KB

english, 1984

14

Experimental study of an SF6 Brillouin amplifier pumped by KrF laser radiation

Fedosejevs, R., Tomov, I. V., McKen, D. C. D., Offenberger, A. A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 468 KB

english, 1984

15

High-power room-temperature CO laser

Arai, Tsunenori, Kikuchi, Makoto

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 475 KB

english, 1984

16

Polar semiconductor quantum wells on nonpolar substrates: (Al,Ga)As/GaAs on (100)Ge

Masselink, W. T., Fischer, R., Klem, J., Henderson, T., Pearah, P., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 490 KB

english, 1984

17

Comparison of trapping levels in GaAsP strained-layer superlattice structures and in their buffer layers

Barnes, C. E., Biefeld, R. M., Zipperian, T. E., Osbourn, G. C.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 483 KB

english, 1984

18

Diffusion of phosphorus during rapid thermal annealing of ion-implanted silicon

Oehrlein, G. S., Cohen, S. A., Sedgwick, T. O.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 511 KB

english, 1984

19

Spectral characteristics of (GaAl)As diode lasers at 1.7 K

Harrison, J., Mooradian, A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 482 KB

english, 1984

20

λ[approximately-equal-to]1.5 μm InGaAsP ridge lasers grown by gas source molecular beam epitaxy

Temkin, H., Panish, M. B., Logan, R. A., van der Ziel, J. P.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 480 KB

english, 1984

21

Correlation of threshold voltage of implanted field-effect transistors and carbon in GaAs substrates

Chen, R. T., Holmes, D. E., Asbeck, P. M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 490 KB

english, 1984

22

Weak-field measurements in crystals with low symmetry

Kyriakos, D. S.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 493 KB

english, 1984

23

Optical guided-wave gallium arsenide monolithic interferometer

Donnelly, J. P., DeMeo, N. L., Ferrante, G. A., Nichols, K. B., O’Donnell, F. J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 488 KB

english, 1984

24

Threshold analysis of cleaved-coupled-cavity lasers

Streifer, William, Yevick, David, Burnham, Robert D., Paoli, Thomas L.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 440 KB

english, 1984

25

Theoretical evaluation of electron-beam-excited KrF lasers using argon-free mixtures of one atmosphere

Kannari, Fumihiko, Suda, Akira, Obara, Minoru, Fujioka, Tomoo

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 493 KB

english, 1984

26

Time-resolved temperature measurement of pulsed laser irradiated germanium by thin-film thermocouple

Baeri, P., Campisano, S. U., Rimini, E., Zhang, Jing Ping

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 454 KB

english, 1984

27

Effect of argon ion implantation dose on silicon Schottky barrier characteristics

Ashok, S., Kräutle, H., Beneking, H.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 494 KB

english, 1984

28

630-mV open circuit voltage, 12% efficient n-Si liquid junction

Rosenbluth, Mary L., Lieber, Charles M., Lewis, Nathan S.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 505 KB

english, 1984

29

Pearlescent suspension display concepts

Bostwick, B. D., Labes, M. M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 391 KB

english, 1984

30

Spectroscopic ellipsometry and Raman scattering study of the annealing behavior of Be-implanted GaAs

Chambon, P., Erman, M., Theeten, J. B., Prévot, B., Schwab, C.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 457 KB

english, 1984

31

High-power, low-threshold, single-mode GaInAsP/InP laser by low-temperature, single-step liquid phase epitaxy

Horikawa, H., Imanaka, K., Matoba, A., Kawai, Y., Sakuta, M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 491 KB

english, 1984

32

Direct imaging of dopant distributions in silicon by scanning transmission electron microscopy

Pennycook, S. J., Narayan, J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 482 KB

english, 1984

33

Direct W–Ti contacts to silicon

Cohen, S. S., Kim, M. J., Gorowitz, B., Saia, R., McNelly, T. F., Todd, G.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 513 KB

english, 1984

34

AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate

Windhorn, T. H., Metze, G. M., Tsaur, B-Y., Fan, John C. C.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 473 KB

english, 1984

35

Optical absorption in ion-implanted lead lanthanum zirconate titanate ceramics

Seager, C. H., Land, C. E.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 482 KB

english, 1984

36

Change of the surface density of the midgap level (EL2 or EL0) in bulk GaAs by heat treatments with various capping

Hasegawa, Fumio, Yamamoto, Norio, Nannichi, Yasuo

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 493 KB

english, 1984

37

11-GHz direct modulation bandwidth GaAlAs window laser on semi-insulating substrate operating at room temperature

Lau, K. Y., Bar-Chaim, N., Ury, I., Yariv, A.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 487 KB

english, 1984

38

High-gain soft-x-ray-pumped photoionization laser in zinc vapor

Lundberg, H., Macklin, J. J., Silfvast, W. T., Wood, O. R.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 508 KB

english, 1984

39

Enhancement of the specific output energy of an electron-beam pumped KrF laser by using Ne as the main buffer gas

Gerber, T., Peters, P. J. M., Bastiaens, H. M. J., Witteman, W. J.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 429 KB

english, 1984

40

Optical levitation using single mode fibers and its application to self-centering of microlenses

Pocholle, Jean-Paul, Raffy, Jean, Combemale, Yves, Papuchon, Michel, Roosen, G., Plantegenest, M. T.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 396 KB

english, 1984

41

Molecular beam epitaxy of diluted magnetic semiconductor (Cd1−xMnxTe) superlattices

Kolodziejski, L. A., Bonsett, T. C., Gunshor, R. L., Datta, S., Bylsma, R. B., Becker, W. M., Otsuka, N.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 441 KB

english, 1984

42

Integrated picosecond photoconductors produced on bulk Si substrates

Hammond, R. B., Paulter, N. G., Wagner, R. S., Eisenstadt, W. R.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 361 KB

english, 1984

43

Photochemical etching of laser-induced defects in (Al,Ga)As heterostructures

Zysset, B., Salathé, R. P.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 442 KB

english, 1984

44

Protection of an interrupted molecular-beam epitaxially grown surface by a thin epitaxial layer of InAs

Chang, Yu-Jeng, Kroemer, Herbert

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 419 KB

english, 1984

45

16–21-μm line-tunable NH3 laser produced by two-step optical pumping

Morrison, H. D., Reid, J., Garside, B. K.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 417 KB

english, 1984

46

Molecular and ion beam epitaxy of 3C-SiC

Miyazawa, T., Yoshida, S., Misawa, S., Gonda, S., Ohdomari, I.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 427 KB

english, 1984

47

Elimination of hillocks on Al-Si metallization by fast-heat-pulse alloying

Faith, T. J., Wu, C. P.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 465 KB

english, 1984

48

Spectral linewidth of gain- and index-guided InGaAsP semiconductor lasers

Elsässer, W., Göbel, E. O.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 420 KB

english, 1984

49

Effect of active layer placement on the threshold current of 1.3-μm InGaAsP etched mesa buried heterostructure lasers

Dutta, N. K., Nelson, R. J., Wilson, R. B., Maher, D. M., Wright, P. D., Sheng, T. T., Lin, P. S. D., Marcus, R. B.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 408 KB

english, 1984

50

Fast diffusion of As in polycrystalline silicon during rapid thermal annealing

Wilson, S. R., Paulson, W. M., Gregory, R. B., Gressett, J. D., Hamdi, A. H., McDaniel, F. D.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 419 KB

english, 1984

51

Longitudinal mode behavior in a separately pumped, multiple twisted double-heterostructure laser

Sugino, Takashi, Chen, Kuo-Liang, Wang, Shyh

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 401 KB

english, 1984

52

Symmetry and electronic properties of the oxygen thermal donor in pulled silicon

Henry, P. M., Farmer, J. W., Meese, J. M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 417 KB

english, 1984

53

Laser detection of diatomic products of plasma sputtering and etching

Walkup, R., Avouris, Ph., Dreyfus, R. W., Jasinski, J. M., Selwyn, G. S.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 440 KB

english, 1984

54

Optoelectrical properties of amorphous-crystalline silicon heterojunctions

Mimura, Hidenori, Hatanaka, Yoshinori

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 415 KB

english, 1984

55

Polarization-dependent gain in GaAs/AlGaAs multi-quantum-well lasers: Theory and experiment

Yamada, M., Ogita, S., Yamagishi, M., Tabata, K., Nakaya, N., Asada, M., Suematsu, Y.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 329 KB

english, 1984

56

Photocapacitance spectroscopy of surface states on indium phosphide photoelectrodes

Goodman, C. E., Wessels, B. W., Ang, P. G. P.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 410 KB

english, 1984

57

Photoluminescence study of nitrogen implanted silicon

Alt, H. Ch., Tapfer, L.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 419 KB

english, 1984

58

Temperature-compensated bulk shear microwave resonators in LiTaO3

Krishnaswamy, S. V., McAvoy, B. R.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 327 KB

english, 1984

59

Photon-assisted dry etching of GaAs

Brewer, Peter, Halle, Scott, Osgood, R. M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 483 KB

english, 1984

60

Sputter deposited titanium disilicide at high substrate temperatures

Tanielian, M., Blackstone, S., Lajos, R.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 399 KB

english, 1984

61

Metal-semiconductor junctions and amorphous-crystalline heterojunctions using B-doped hydrogenated amorphous silicon

Matsuura, Hideharu, Matsuda, Akihisa, Okushi, Hideyo, Okuno, Tetsuhiro, Tanaka, Kazunobu

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 397 KB

english, 1984

62

Dependence of photoconductivity on the dark Fermi level position in amorphous silicon alloys

Hack, M., Guha, S., Shur, M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 487 KB

english, 1984

63

Fabrication of 20-nm structures in GaAs

Stern, M. B., Craighead, H. G., Liao, P. F., Mankiewich, P. M.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 480 KB

english, 1984

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