Volume 49; Issue 11

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Applied Physics Letters
Volume 49; Issue 11

Applied Physics Letters

Volume 49; Issue 11

1

Broadly tunable infrared parametric oscillator using AgGaSe2

Eckardt, R. C., Fan, Y. X., Byer, R. L., Marquardt, C. L., Storm, M. E., Esterowitz, L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 545 KB

english, 1986

2

Atomistic Monte Carlo calculation of critical layer thickness for coherently strained siliconlike structures

Dodson, Brian W., Taylor, Paul A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 469 KB

english, 1986

3

Super-resolution fluorescence near-field scanning optical microscopy

Harootunian, A., Betzig, E., Isaacson, M., Lewis, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 401 KB

english, 1986

4

Electroreflectance study of HgCdTe in the metal-insulator-semiconductor configuration at 77 K

Ksendzov, A., Pollak, Fred H., Wilson, J. A., Cotton, V. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 522 KB

english, 1986

5

Substrate hole current and oxide breakdown

Chen, I. C., Holland, S., Young, K. K., Chang, C., Hu, C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 463 KB

english, 1986

6

Activated reactive evaporation of hydrogenated amorphous silicon nitride

Shufflebotham, P. K., White, J. F., Card, H. C., Kao, K. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 503 KB

english, 1986

7

Low current threshold AlGaAs visible laser diodes with an (AlGaAs)m(GaAs)n superlattice quantum well

Hayakawa, T., Suyama, T., Takahashi, K., Kondo, M., Yamamoto, S., Hijikata, T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 477 KB

english, 1986

8

Phase-locked controlled filament laser

Salzman, J., Larsson, A., Yariv, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 514 KB

english, 1986

9

High resolution electron microscopy of the GaAs/Si3N4 interface produced by multipolar plasma deposition

Rutérana, P., Friedel, P., Schneider, J., Chevalier, J. P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 453 KB

english, 1986

10

Photoelectronic and electronic properties of Ti/Si amorphous superlattices

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 474 KB

english, 1986

11

Diffraction-limited emission from a diode laser array in an apertured graded-index lens external cavity

Chang-Hasnain, C., Welch, D. F., Scifres, D. R., Whinnery, J. R., Dienes, A., Burnham, R. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 452 KB

english, 1986

12

Synthesis of diamond by laser-induced chemical vapor deposition

Kitahama, Katsuki, Hirata, Kazuhiko, Nakamatsu, Hirohide, Kawai, Shichio, Fujimori, Naoji, Imai, Takahiro, Yoshino, Hiroshi, Doi, Akira

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 452 KB

english, 1986

13

Structure of interfaces in amorphous silicon/silicon nitride superlattices determined by in situ optical reflectance

Yang, L., Abeles, B., Persans, P. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 423 KB

english, 1986

14

Erratum: Guided-wave acousto-optic interaction in proton-exchanged Y-cut LiNbO3 [Appl. Phys. Lett. 48, 1579 (1986)]

Dawar, A. L., Al-Shukri, S. M., De La Rue, R. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 207 KB

english, 1986

15

Patterning of fine structures in silicon dioxide layers by ion beam exposure and wet chemical etching

Cleaver, J. R. A., Heard, P. J., Evason, A. F., Ahmed, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 415 KB

english, 1986

16

Origin of the nonexponential thermal emission kinetics of DX centers in GaAlAs

Calleja, E., Mooney, P. M., Wright, S. L., Heiblum, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 456 KB

english, 1986

17

Far-field analytical model for laser arrays and fitting with experimental results

Berger, J., Fekete, D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 372 KB

english, 1986

18

Evidence of light-induced bond breaking in hydrogenated amorphous silicon

Hong, C. S., Hwang, H. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 380 KB

english, 1986

19

Picosecond laser melting and evaporation of GaAs surfaces

Liu, J. M., Malvezzi, A. M., Bloembergen, N.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 466 KB

english, 1986

20

Intensity profiles of short optical pulses via temporally reversed pulses

Montgomery, Steven R., Pederson, Donald O., Salamo, Gregory J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 330 KB

english, 1986

21

Amorphous and crystalline oxide precipitates in oxygen implanted silicon

van Ommen, A. H., Koek, B. H., Viegers, M. P. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 482 KB

english, 1986

22

Well size dependence of Stark shifts for heavy-hole and light-hole levels in GaAs/AlGaAs quantum wells

Hiroshima, T., Lang, R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 456 KB

english, 1986

23

Improved polycrystalline silicon sheet resistance by rapid thermal annealing prior and subsequent to ion implantation

Wilson, S. R., Gregory, R. B., Paulson, W. M., Krause, S. J., Leavitt, J. A., McIntyre, L. C., Seerveld, J. L., Stoss, P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 509 KB

english, 1986

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