Volume 49; Issue 6

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Applied Physics Letters
Volume 49; Issue 6

Applied Physics Letters

Volume 49; Issue 6

1

Interface traps and Pb centers in oxidized (100) silicon wafers

Gerardi, Gary J., Poindexter, Edward H., Caplan, Philip J., Johnson, Noble M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 429 KB

english, 1986

2

Ga2O3: The origin of growth-induced oval defects in GaAs molecular beam epitaxy

Weng, Shang-Lin

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 484 KB

english, 1986

3

Electron mobility and velocity in compensated GaAs

Xu, Jingming, Bernhardt, Bruce A., Shur, Michael, Chen, Chung-Hsu, Peczalski, Andrzej

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 437 KB

english, 1986

4

High-speed electrical sampling by fs photoemission

Marcus, R. B., Weiner, Andrew M., Abeles, Joseph H., Lin, Paul S. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 466 KB

english, 1986

5

Chemical and electronic structure of InSb-CdTe interfaces

Mackey, K. J., Allen, P. M. G., Herrenden-Harker, W. G., Williams, R. H., Whitehouse, C. R., Williams, G. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 486 KB

english, 1986

6

Technique to produce coherent x-ray radiation via laser pumping of a relativistic ion beam

Bogacz, S. A., Ketterson, J. B.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 456 KB

english, 1986

7

Surface state density distribution at an Al2O3-InP metal-insulator-semiconductor field-effect transistor measured by the charge pumping technique

Kobayashi, Takeshi, Ichikawa, Tohru, Sawai, Tetsurou

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 339 KB

english, 1986

8

Growth of rare-earth single crystals by molecular beam epitaxy: The epitaxial relationship between hcp rare earth and bcc niobium

Kwo, J., Hong, M., Nakahara, S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 495 KB

english, 1986

9

Characterization of InGaAsP surface corrugation used for distributed feedback lasers by means of Raman spectroscopy

Kubo, Minoru, Koga, Keisuke, Ogura, Mototsugu, Kohiki, Shigemi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 403 KB

english, 1986

10

Behavior of inversion layers in 3C silicon carbide

Avila, R. E., Kopanski, J. J., Fung, C. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 417 KB

english, 1986

11

Calibration of the carbon localized vibrational mode absorption line in GaAs

Brozel, M. R., Foulkes, E. J., Series, R. W., Hurle, D. T. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 426 KB

english, 1986

12

Solid phase epitaxial regrowth of ion-implanted amorphized InP

Licoppe, C., Nissim, Y. I., Krauz, P., Henoc, P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 434 KB

english, 1986

13

InP metal-semiconductor field-effect transistors with mercury and cadmium gates

Meiners, L. G., Clawson, A. R., Nguyen, R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 383 KB

english, 1986

14

Infrared optical properties of polycrystalline silver halide fibers

Sa’ar, A., Moser, F., Akselrod, S., Katzir, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 386 KB

english, 1986

15

Surface-emitting second order distributed Bragg reflector laser with dynamic wavelength stabilization and far-field angle of 0.25°

Evans, G. A., Hammer, J. M., Carlson, N. W., Elia, F. R., James, E. A., Kirk, J. B.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 355 KB

english, 1986

16

Microwave equivalent circuit representation of rectangular dielectric waveguides

Dagli, N., Fonstad, C. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 430 KB

english, 1986

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