Volume 50; Issue 8

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Applied Physics Letters
Volume 50; Issue 8

Applied Physics Letters

Volume 50; Issue 8

1

Investigation of nanocrystalline iron materials by Mössbauer spectroscopy

Herr, U., Jing, J., Birringer, R., Gonser, U., Gleiter, H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 559 KB

english, 1987

2

Optical tristability using a twin-stripe laser diode

Watanabe, Masanobu, Itoh, Hideo, Mukai, Seiji, Yajima, Hiroyoshi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 551 KB

english, 1987

3

Glow-discharge-implanted, thermally annealed, oxide-passivated silicon solar cells of 19% efficiency

R. D. Westbrook, R. F. Wood, G. E. Jellison

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 561 KB

english, 1987

4

Rapid thermal processing to improve the epitaxy of (100) silicon on (11̄02) sapphire

Pfeiffer, Loren, Phillips, Julia M., Luther, K. E., West, K. W., Batstone, J. L., Stevie, F. A., Maurits, J. E. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 651 KB

english, 1987

5

Ultrasonic study of mechanically alloyed Co40Sn60

Hikata, A., McKenna, M. J., Elbaum, C.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 500 KB

english, 1987

6

Infrared spectroscopic evidence of silicon related hydrogen complexes in hydrogenated n-type GaAs doped with silicon

Jalil, A., Chevallier, J., Pesant, J. C., Mostefaoui, R., Pajot, B., Murawala, P., Azoulay, R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 629 KB

english, 1987

7

Surface reaction and recombination of the SiH3 radical on hydrogenated amorphous silicon

Perrin, Jéro^me, Broekhuizen, Ton

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 617 KB

english, 1987

8

Oxygen removal from Si via reaction with adsorbed Ge

Morar, J. F., Meyerson, B. S., Karlsson, U. O., Himpsel, F. J., McFeely, F. R., Rieger, D., Taleb-Ibrahimi, A., Yarmoff, J. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 500 KB

english, 1987

9

Thermal stability and barrier height enhancement for refractory metal nitride contacts on GaAs

Zhang, L. C., Cheung, S. K., Liang, C. L., Cheung, N. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 501 KB

english, 1987

10

Carrier lifetime versus ion-implantation dose in silicon on sapphire

Doany, F. E., Grischkowsky, D., Chi, C.-C.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 583 KB

english, 1987

11

Improved activation of Mg+ and As+ dual implants in GaAs by capless rapid thermal annealing

Masum Choudhury, A. N. M., Armiento, C. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 561 KB

english, 1987

12

Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates

van der Ziel, J. P., Dupuis, R. D., Logan, R. A., Mikulyak, R. M., Pinzone, C. J., Savage, A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 509 KB

english, 1987

13

Fast burning of persistent spectral holes in small laser spots using photon-gated materials

Moerner, W. E., Carter, T. P., Bräuchle, C.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 574 KB

english, 1987

14

Stimulated emission of photoexcited GaAs/AlxGa1−xAs single quantum wells

Borenstain, S., Fekete, D., Vofsi, M., Sarfaty, R., Cohen, E., Ron, Arza

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 463 KB

english, 1987

15

Modulation of Renninger scan intensity: A new x-ray technique to characterize epitaxial structures

Greenberg, B., Ladell, J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 467 KB

english, 1987

16

Experimental realization of a resonant tunneling transistor

Woodward, T. K., McGill, T. C., Burnham, R. D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 662 KB

english, 1987

17

Efficient technique for calculating the bound and virtual energy spectrum of semiconductor structures

Schwartz, Carey

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 634 KB

english, 1987

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