Volume 54; Issue 25

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Applied Physics Letters
Volume 54; Issue 25

Applied Physics Letters

Volume 54; Issue 25

1

Diffusion and drift of Si dopants in δ‐doped n‐type AlxGa1-xAs

Schubert, E. F., Tu, C. W., Kopf, R. F., Kuo, J. M., Lunardi, L. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 616 KB

english, 1989

2

Metalorganic chemical vapor deposition of [100] textured MgO thin films

Kwak, B. S., Boyd, E. P., Zhang, K., Erbil, A., Wilkins, B.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 555 KB

english, 1989

3

Electro-optical switching and bistability in coupled quantum wells

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 554 KB

english, 1989

4

Doping Zn1−xMnxSe n type

Hong, Run-Di, Dow, John D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 462 KB

english, 1989

5

Interferometric measurement of the pressure-enhanced crystallization rate of amorphous Si

Lu, G. Q., Nygren, E., Aziz, M. J., Turnbull, D., White, C. W.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 634 KB

english, 1989

6

Low-resistivity contacts to bulk high Tc superconductors

Jin, S., Davis, M. E., Tiefel, T. H., van Dover, R. B., Sherwood, R. C., O’Bryan, H. M., Kammlott, G. W., Fastnacht, R. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 700 KB

english, 1989

7

Calibration of the electrical response of piezoelectric elements at low voltage using laser interferometry

Riis, E., Simonsen, H., Worm, T., Nielsen, U., Besenbacher, F.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 522 KB

english, 1989

8

Origin and penetration depth of thermal degradation in InP

Sartorius, B., Pfanner, K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 752 KB

english, 1989

9

Acoustic emission field during thermoelastic martensitic transformations

Mañosa, Ll., Planes, A., Rouby, D., Morin, M., Fleischmann, P., Macqueron, J. L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 499 KB

english, 1989

10

Experimental verification of frequency level-off of modulational instability in the minimum dispersion region

Ito, Fumihiko, Kitayama, Ken-ichi, Yoshinaga, Hisao

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 605 KB

english, 1989

11

Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy

Offsey, S. D., Schaff, W. J., Tasker, P. J., Ennen, H., Eastman, L. F.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 601 KB

english, 1989

12

Rapid fabrication of lightweight ceramic mirrors via chemical vapor deposition

Goela, Jitendra S., Taylor, Raymond L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 638 KB

english, 1989

13

Electron transport in (Cs)Na2KSb photocathodes

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 432 KB

english, 1989

14

Nitrogen-implantation-induced transformation of iron to crystalline Fe16N2 in epitaxial iron films

Nakajima, Kensuke, Okamoto, Shoichi

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 524 KB

english, 1989

15

GaAs/AlGaAs multiquantum well infrared detector arrays using etched gratings

Hasnain, G., Levine, B. F., Bethea, C. G., Logan, R. A., Walker, J., Malik, R. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 626 KB

english, 1989

16

Photoluminescence from CdTe/Hg1−yCdyTe/Hg1−xCdxTe separate confinement heterostructures

Mahavadi, K. K., Lange, M. D., Faurie, J. P., Nagle, J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 524 KB

english, 1989

17

Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained-layer superlattices

Yamaguchi, Masafumi, Sugo, Mitsuru, Itoh, Yoshio

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 581 KB

english, 1989

18

Reflection high-energy electron diffraction and x-ray photoelectron spectroscopic study on (NH4)2Sx-treated GaAs (100) surfaces

Hirayama, Hiroyuki, Matsumoto, Yoshishige, Oigawa, Haruhiro, Nannichi, Yasuo

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 615 KB

english, 1989

19

The optical gain lever: A novel gain mechanism in the direct modulation of quantum well semiconductor lasers

Vahala, Kerry J., Newkirk, Michael A., Chen, T. R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 615 KB

english, 1989

20

Homoepitaxial growth of ZnSe on dry-etched substrates

Ohkawa, K., Karasawa, T., Yoshida, A., Hirao, T., Mitsuyu, T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 481 KB

english, 1989

21

Hot-electron limitation to the sensitivity of the dc superconducting quantum interference device

Wellstood, Frederick C., Urbina, Cristian, Clarke, John

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 568 KB

english, 1989

22

Anomalous dependence of threshold current on stripe width in gain-guided strained-layer InGaAs/GaAs quantum well lasers

Shieh, C., Mantz, J., Lee, H., Ackley, D., Engelmann, R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 476 KB

english, 1989

23

Carbon as a barrier for the outdiffusion of Cu

Chang, Chin-An, Yee, D. S., Petkie, R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 482 KB

english, 1989

24

Third-order nonlinear optical properties of a soluble conjugated polythiophene derivative

Jenekhe, Samson A., Lo, S. K., Flom, Steven R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 463 KB

english, 1989

25

Electro-optical switching in a GaAs multiple quantum well directional coupler

Cada, M., Keyworth, B. P., Glinski, J. M., Rolland, C., SpringThorpe, A. J., Hill, K. O., Soref, R. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 508 KB

english, 1989

26

X-ray photoelectron spectroscopic study of rapid thermal processing on SiO2/GaAs

Katayama, Masayuki, Tokuda, Yutaka, Ando, Nobuo, Inoue, Yajiro, Usami, Akira, Wada, Takao

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 510 KB

english, 1989

27

Ionized cluster beam deposition of Hg1−xCdxTe films and their optical properties

Takaoka, Gikan H., Murakami, Satoshi, Ishikawa, Junzo, Takagi, Toshinori

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 508 KB

english, 1989

28

Ion channeling analysis of a Si1−xGex(As)/Si strained layer

Moore, J. A., Lennard, W. N., Massoumi, G. R., Jackman, T. E., Baribeau, J-M., Jackman, J. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 472 KB

english, 1989

29

Gain-loss model for the dependence of the stimulated-emission transition in AlGaAs-GaAs quantum well heterostructures on photoexcitation geometry

Vojak, B. A., Holonyak, N.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 534 KB

english, 1989

30

Full-aperture, high-power semiconductor laser

Waters, R. G., Dalby, R. J., Emanuel, M. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 439 KB

english, 1989

31

Conductance characteristics of ballistic one-dimensional channels controlled by a gate electrode

Hirayama, Y., Saku, T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 518 KB

english, 1989

32

Surface accumulation of hydrogen during capless annealing of InP

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 391 KB

english, 1989

33

Tunable twin-guide laser: A novel laser diode with improved tuning performance

Amann, M.-C., Illek, S., Schanen, C., Thulke, W.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 449 KB

english, 1989

34

Ultrahigh Be doping of Ga0.47In0.53As by low-temperature molecular beam epitaxy

Hamm, R. A., Panish, M. B., Nottenburg, R. N., Chen, Y. K., Humphrey, D. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 453 KB

english, 1989

35

Properties of Bi(Pb)-Sr-Ca-Cu-O superconducting tapes prepared by the doctor-blade process

Yanagisawa, E., Morimoto, T., Dietderich, D. R., Kumakura, H., Togano, K., Maeda, H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 512 KB

english, 1989

36

Solid phase epitaxy of molecular beam deposited amorphous GaAs on Si

Yoshino, Kiyohiko, Murakami, Kouichi, Yokoyama, Shin, Masuda, Kohzoh

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 577 KB

english, 1989

37

Grain size dependence of electromigration-induced failures in narrow interconnects

Cho, J., Thompson, C. V.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 605 KB

english, 1989

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