Volume 57; Issue 13

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Applied Physics Letters
Volume 57; Issue 13

Applied Physics Letters

Volume 57; Issue 13

1

Thermal generation currents in hydrogenated amorphous silicon p-i-n structures

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 524 KB

english, 1990

2

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

Roth, J. A., Olson, G. L., Jacobson, D. C., Poate, J. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 548 KB

english, 1990

3

InGaAs/InP distributed feedback quantum well laser

Temkin, H., Tanbun-Ek, T., Logan, R. A., Olsson, N. A., Sergent, M. A., Wecht, K. W., Cebula, D. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 582 KB

english, 1990

4

Reducing slip in a far-infrared free-electron laser using a parallel-plane waveguide

Ride, S. K., Pantell, R. H., Feinstein, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 552 KB

english, 1990

5

Mössbauer spectra of nanocrystalline Fe and Fe-Cr particles in sol-gel-derived SiO2 glass

Chatterjee, A., Das, D., Chakravorty, D., Choudhury, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 590 KB

english, 1990

6

Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy

Warren, A. C., Woodall, J. M., Freeouf, J. L., Grischkowsky, D., McInturff, D. T., Melloch, M. R., Otsuka, N.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 651 KB

english, 1990

7

10 μm infrared hot-electron transistors

Choi, K. K., Dutta, M., Newman, P. G., Saunders, M.-L., Iafrate, G. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 563 KB

english, 1990

8

Novel method for determining the electromagnetic dispersion relation of periodic slow wave structures

Carmel, Y., Guo, H., Lou, W. R., Abe, D., Granatstein, V. L., Destler, W. W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 568 KB

english, 1990

9

Analysis of the two-dimensional dark currents in quantum well devices

Brennan, Kevin, Wang, Yang

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 541 KB

english, 1990

10

Self-developing holographic recording in Li-implanted Te thin films

Beauvais, J., Lessard, R. A., Galarneau, P., Knystautas, E. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 592 KB

english, 1990

11

Deep Ti donor in GaAs

Scheffler, H., Korb, W., Bimberg, D., Ulrici, W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 605 KB

english, 1990

12

Response to ‘‘Comment on ‘Optical bistability in self-electro-optic effect devices with asymmetric quantum wells’ and on ‘Novel configuration of self-electro-optic effect device based on asymmetric quantum wells’ ’’ [Appl. Phys. Lett. 57, 1363 (1990)]

Miller, D. A. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 429 KB

english, 1990

13

Low-threshold surface-emitting laser diodes with distributed Bragg reflectors and current blocking layers

Shimada, M., Asaka, T., Yamasaki, Y., Iwano, H., Ogura, M., Mukai, S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 567 KB

english, 1990

14

Electronic properties of a pulse-doped GaAs structure grown by organometallic vapor phase epitaxy

Nakajima, Shigeru, Kuwata, Nobuhiro, Nishiyama, Naoki, Shiga, Nobuo, Hayashi, Hideki

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 373 KB

english, 1990

15

Characterization of DX centers in selectively doped GaAs-AlAs superlattices

Ababou, S., Marchand, J. J., Mayet, L., Guillot, G., Mollot, F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 479 KB

english, 1990

16

Low-loss substrate for microwave application of high-temperature superconductor films

Brown, R., Pendrick, V., Kalokitis, D., Chai, B. H. T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 570 KB

english, 1990

17

Interaction of Cu with CoSi2 with and without TiNx barrier layers

Olowolafe, J. O., Li, Jian, Blanpain, B., Mayer, J. W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 421 KB

english, 1990

18

Deep levels associated with α and β dislocations in n-type InP

Zozime, Alain, Schröter, Wolfgang

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 454 KB

english, 1990

19

Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm

Eglash, S. J., Choi, H. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 454 KB

english, 1990

20

Monolithic InGaAs p-i-n InP metal-insulator-semiconductor field-effect transistor receiver for long-wavelength optical communications

Mattera, V. D., Antreasyan, A., Garbinski, P. A., Temkin, H., Olsson, N. A., Filipe, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 470 KB

english, 1990

21

Comment on ‘‘Optical bistability in self-electro-optic effect devices with asymmetric quantum wells’’ and on ‘‘Novel configuration of self-electro-optic effect device based on asymmetric quantum wells’’

Leavitt, R. P., Little, J. W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 456 KB

english, 1990

22

Observation of domain boundaries on the Si (111) 7×7 surface by scanning tunneling microscope

Sumita, I., Yokotsuka, T., Tanaka, H., Udagawa, M., Watanabe, Y., Takao, M., Yokoyama, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 560 KB

english, 1990

23

High precision temperature- and energy-dependent refractive index of GaAs determined from excitation of optical waveguide eigenmodes

Kisting, S. R., Bohn, P. W., Andideh, E., Adesida, I., Cunningham, B. T., Stillman, G. E., Harris, T. D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 527 KB

english, 1990

24

Threshold reduction through photon recycling in semiconductor lasers

Gigase, Yves B., Harder, Christoph S., Kesler, Morris P., Meier, Heinz P., Van Zeghbroeck, Bart

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 465 KB

english, 1990

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