Volume 60; Issue 10

Applied Physics Letters

Volume 60; Issue 10
2

Thermally activated dopant diffusion in crystalline silicon at 200 °C?

Year:
1992
Language:
english
File:
PDF, 583 KB
english, 1992
13

Kinetic diffusion model of ion-implanted boron during rapid thermal annealing

Year:
1992
Language:
english
File:
PDF, 556 KB
english, 1992
30

Mechanical strength of silicon crystals with oxygen and/or germanium impurities

Year:
1992
Language:
english
File:
PDF, 565 KB
english, 1992
32

Ultrasonic Newton’s rings

Year:
1992
Language:
english
File:
PDF, 661 KB
english, 1992
33

Oxidation induced AlAs/GaAs superlattice disordering

Year:
1992
Language:
english
File:
PDF, 663 KB
english, 1992