Volume 62; Issue 12

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Applied Physics Letters
Volume 62; Issue 12

Applied Physics Letters

Volume 62; Issue 12

1

Oxygen‐related centers in chemical vapor deposition of diamond

Ruan, J., Choyke, W. J., Kobashi, K.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 646 KB

english, 1993

2

Second‐harmonic generation of poled BaTiO3 thin films

Lu, H. A., Wills, L. A., Wessels, B. W., Lin, W. P., Zhang, T. G., Wong, G. K., Neumayer, D. A., Marks, T. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 655 KB

english, 1993

3

Surface reconstructions of GaAs(111)A and (111)B: A static surface phase study by reflection high-energy electron diffraction

Woolf, D. A., Westwood, D. I., Williams, R. H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 623 KB

english, 1993

4

Concentration profiles of surface atoms during epitaxial growth on vicinal surfaces

Shitara, T., Suzuki, T., Vvedensky, D. D., Nishinaga, T.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 640 KB

english, 1993

5

Luminescent porous silicon synthesized by visible light irradiation

Noguchi, Nobuaki, Suemune, Ikuo

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 727 KB

english, 1993

6

Quantized conductance of ballistic constrictions in InAs/AlSb quantum wells

Koester, S. J., Bolognesi, C. R., Rooks, M. J., Hu, E. L., Kroemer, H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 566 KB

english, 1993

7

Femtosecond index nonlinearities in InGaAsP optical amplifiers

Hall, K. L., Darwish, A. M., Ippen, E. P., Koren, U., Raybon, G.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 636 KB

english, 1993

8

Strained-layer InGaAs/GaInAsP/GaInP quantum well lasers grown by gas-source molecular beam epitaxy

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 570 KB

english, 1993

9

Low-temperature decay of photocapacitance caused by Sn-related DX centers in AlxGa1−xAs

Žd’ánský, K., Peaker, A. R.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 623 KB

english, 1993

10

Photoluminescence excitation spectroscopy on intermixed GaAs/AlGaAs quantum wires

Prins, F. E., Lehr, G., Burkard, M., Schweizer, H., Pilkuhn, M. H., Smith, G. W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 582 KB

english, 1993

11

Step equalization in epitaxial growth: A noise limited process

Williams, D. R. M., Krishnamurthy, Mohan

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 646 KB

english, 1993

12

Ellipsometric characterization of In0.52Al0.48As and of modulation doped field effect transistor structures on InP substrates

Alterovitz, S. A., Sieg, R. M., Pamulapati, J., Bhattacharya, P. K.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 639 KB

english, 1993

13

Heteroepitaxy of β-FeSi2 on unstrained and strained Si(100) surfaces

Peale, D. R., Haight, R., Ott, J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 729 KB

english, 1993

14

Refractive index gradients and light scattering in polymer-dispersed liquid crystal films

Drzaic, Paul S., Gonzales, Anne M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 610 KB

english, 1993

15

Monochromatic all-optical gate with 1 ps response time

Paye, J., Hulin, D.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 592 KB

english, 1993

16

Growth of GaAsN alloys by low-pressure metalorganic chemical vapor deposition using plasma-cracked NH3

Weyers, Markus, Sato, Michio

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 510 KB

english, 1993

17

Sub-50 nm high aspect-ratio silicon pillars, ridges, and trenches fabricated using ultrahigh resolution electron beam lithography and reactive ion etching

Fischer, P. B., Chou, S. Y.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 606 KB

english, 1993

18

On the lack of correlation between film properties and solar cell performance of amorphous silicon-germanium alloys

Xu, X., Yang, J., Guha, S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 547 KB

english, 1993

19

Photoemission from U and Mg using a pulsed XeCl laser

Ivri, J., Levin, L. A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 476 KB

english, 1993

20

Picosecond photoconductivity in polycrystalline gallium arsenide grown by molecular beam epitaxy

Morse, Jeffrey D., Mariella, Raymond P., Adkisson, James W., Anderson, George D., Harris, James S., Dutton, Robert W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 537 KB

english, 1993

21

Electron paramagnetic resonance observation of trigonally symmetric Si dangling bonds in porous silicon layers: Evidence for crystalline Si phase

Mao, J. C., Jia, Y. Q., Fu, J. S., Wu, E., Zhang, B. R., Zhang, L. Z., Qin, G. G.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 590 KB

english, 1993

22

Grazing-incidence x-ray diffraction characterization of Co-Pt magneto-optical thin films

Huang, T. C., Savoy, R., Farrow, R. F. C., Marks, R. F.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 490 KB

english, 1993

23

Γ-X intervalley tunneling in InAs/AlSb resonant tunneling diodes

Carnahan, R. E., Maldonado, M. A., Martin, K. P., Nogaret, A., Higgins, R. J., Cury, L. A., Maude, D. K., Portal, J. C., Chen, J. F., Cho, A. Y.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 621 KB

english, 1993

24

Frequency multiplication in actively mode-locked semiconductor lasers

Onodera, N., Lowery, A. J., Zhai, L., Ahmed, Z., Tucker, R. S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 508 KB

english, 1993

25

Phase locking in a multichannel radial array CO2 laser

Yelden, E. F., Seguin, H. J. J., Capjack, C. E., Reshef, H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 538 KB

english, 1993

26

Single depressed-index cladding ridge waveguide laser with a low aspect ratio

Kahen, K. B., Shantharama, L. G., Shepherd, J. P., Peterson, D. L.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 543 KB

english, 1993

27

Enhanced electro-optic properties of low-temperature-growth GaAs and AlGaAs

Nolte, D. D., Melloch, M. R., Woodall, J. M., Ralph, S. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 584 KB

english, 1993

28

Negative ion mass spectra and particulate formation in radio frequency silane plasma deposition experiments

Howling, A. A., Dorier, J.-L., Hollenstein, Ch.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 606 KB

english, 1993

29

Simultaneous scanning tunneling and optical near-field imaging with a micropipette

Lieberman, Klony, Lewis, Aaron

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 620 KB

english, 1993

30

Changes in electrical device characteristics during the in situ formation of dislocations

Ross, F. M., Hull, R., Bahnck, D., Bean, J. C., Peticolas, L. J., King, C. A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 625 KB

english, 1993

31

Effects of band mixing on hole tunneling times in GaAs/AlAs double-barrier heterostructures

Erdoğan, M. U., Kim, K. W., Stroscio, M. A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 605 KB

english, 1993

32

Comparative analysis of the intersubband versus band-to-band transitions in quantum wells

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 518 KB

english, 1993

33

Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs

Matragrano, M. J., Watson, G. P., Ast, D. G., Anderson, T. J., Pathangey, B.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 739 KB

english, 1993

34

Atomic layer epitaxy of AlAs using trimethylamine-alane and amino-As

Fujii, Kazuyuki, Suemune, Ikuo, Yamanishi, Masamichi

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 644 KB

english, 1993

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