Volume 63; Issue 7

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Applied Physics Letters
Volume 63; Issue 7

Applied Physics Letters

Volume 63; Issue 7

1

p‐type zinc‐blende GaN on GaAs substrates

Lin, M. E., Xue, G., Zhou, G. L., Greene, J. E., Morkoc, H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 540 KB

english, 1993

2

Atomic force microscope investigation of C60 adsorbed on silicon and mica

Thundat, T., Warmack, R. J., Ding, D., Compton, R. N.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 769 KB

english, 1993

3

Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy

Wang, Cheng, Davis, Robert F.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 610 KB

english, 1993

4

Polymer optical fiber amplifier

A. Tagaya, Y. Koike, T. Kinoshita, E. Nihei, T. Yamamoto, K. Sasaki

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 422 KB

english, 1993

5

High-efficiency pyrromethene doped solid-state dye lasers

Hermes, Robert E., Allik, Toomas H., Chandra, Suresh, Hutchinson, J. Andrew

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 485 KB

english, 1993

6

Study of the effects of aging on the relaxation luminance in atomic layer epitaxy ZnS:Mn alternating-current thin-film electroluminescent devices

Morton, D. C., Koh, J., Hogh, C. P., Khormaei, R.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 596 KB

english, 1993

7

Diamondlike carbon films as protective coatings for superconducting YBa2Cu3O7 films

Ganapathi, L., Giles, S., Rao, Rama

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 700 KB

english, 1993

8

Influence of deposition pressure on the output characteristics of low pressure chemical vapor deposited polycrystalline silicon thin-film transistors

Dimitriadis, C. A., Coxon, P. A., Economou, N. A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 602 KB

english, 1993

9

Comparison of microsecond photoluminescence decay between as-prepared and dry-oxidized porous Si

Takazawa, Akira, Tamura, Tetsuro, Yamada, Masao

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 637 KB

english, 1993

10

Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nm

Wang, S. Y., Horsburgh, G., Thompson, P., Hauksson, I., Mullins, J. T., Prior, K. A., Cavenett, B. C.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 567 KB

english, 1993

11

High-temperature operation of strained Si0.65Ge0.35/Si(111) p-type multiple-quantum-well light-emitting diode grown by solid source Si molecular-beam epitaxy

Fukatsu, S., Usami, N., Shiraki, Y., Nishida, A., Nakagawa, K.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 662 KB

english, 1993

12

Josephson coupling of YBa2Cu3O7−x through a ferromagnetic barrier SrRuO3

Antognazza, L., Char, K., Geballe, T. H., King, L. L. H., Sleight, A. W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 660 KB

english, 1993

13

Paramagnetic center in porous silicon: A dangling bond with C3v symmetry

Uchida, Yoshishige, Koshida, Nobuyoshi, Koyama, Hideki, Yamamoto, Yuko

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 647 KB

english, 1993

14

Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs

Klatt, J. L., Averback, R. S., Forbes, D. V., Coleman, J. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 682 KB

english, 1993

15

Liquid phase epitaxial regrowth on sulfide-passivated Ga1−xAlxAs

Berkovits, V. L., Lantratov, V. M., L’vova, T. V., Shakiashvili, G. A., Ulin, V. P., Paget, D.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 716 KB

english, 1993

16

Electronic beam induced poling of BaTiO3 thin films

Lu, H. A., Wills, L. A., Wessels, B. W., Lin, W. P., Wong, G. K.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 680 KB

english, 1993

17

Nature of Pb-like dangling-orbital centers in luminescent porous silicon

Rong, F. C., Harvey, J. F., Poindexter, E. H., Gerardi, G. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 588 KB

english, 1993

18

Transport properties in n-type InSb films grown by metalorganic chemical vapor deposition

Song, S. N., Ketterson, J. B, Choi, Y. H., Sudharsanan, R., Razeghi, M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 611 KB

english, 1993

19

Relationship among reflectance-difference spectroscopy, surface photoabsorption, and spectroellipsometry

Hingerl, K., Aspnes, D. E., Kamiya, I., Florez, L. T.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 639 KB

english, 1993

20

Resonant holographic interferometry of laser-ablation plumes

Lindley, R. A., Gilgenbach, R. M., Ching, C. H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 670 KB

english, 1993

21

Defect control during solid phase epitaxial growth of SiGe alloy layers

Im, Seongil, Washburn, Jack, Gronsky, Ronald, Cheung, Nathan W., Yu, Kin Man

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 626 KB

english, 1993

22

Comparison of the physical properties of GaN thin films deposited on (0001) and (011̄2) sapphire substrates

Sun, Chien-Jen, Razeghi, Manijeh

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 601 KB

english, 1993

23

Tunneling through AlxGa1−xAs single barriers under hydrostatic pressure

Rossmanith, M., Syassen, K., Böckenhoff, E., Ploog, K., von Klitzing, K.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 640 KB

english, 1993

24

Cavity design for improved electrical injection in InAlGaP/AlGaAs visible (639–661 nm) vertical-cavity surface-emitting laser diodes

Schneider, R. P., Lott, J. A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 685 KB

english, 1993

25

All-optical bistable switching and signal regeneration in a semiconductor layered distributed-feedback/Fabry–Perot structure

He, J., Cada, M., Dupertuis, M.-A., Martin, D., Morier-Genoud, F., Rolland, C., SpringThorpe, A. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 680 KB

english, 1993

26

Ultraviolet dosimetric properties of α-Al2O3 crystals

Pérez Salas, R., Aceves, R., Meléndrez, R., Barboza-Flores, M., Pashchenko, L. P.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 512 KB

english, 1993

27

Ultrafast nonequilibrium carrier relaxation in single-crystal Nd1.85Ce0.15CuO4−y

Liu, Yongqian, Whitaker, John F., Uher, Ctirad, Peng, Jian-Liang, Li, Z. Y., Greene, R. L.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 712 KB

english, 1993

28

Directional isothermal growth of highly textured Bi2Sr2CaCu2Oy

Holesinger, T. G., Miller, D. J., Viswanathan, H. K., Dennis, K. W., Chumbley, L. S., Winandy, P. W., Youngdahl, A. C.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 686 KB

english, 1993

29

Observation of the valence-subband level crossing in GaAs/GaAsP strained-barrier quantum well structures using circularly polarized photoluminescence excitation spectroscopy

Ota, Kazunobu, Yaguchi, Hiroyuki, Onabe, Kentaro, Ito, Ryoichi, Takahashi, Yutaka, Muraki, Koji, Shiraki, Yasuhiro

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 596 KB

english, 1993

30

Effects of microstructure on transport properties of undoped hydrogenated amorphous silicon films

Dawson, R. M. A., Fortmann, C. M., Gunes, M., Li, Y. M., Nag, S. S., Collins, R. W., Wronski, C. R.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 581 KB

english, 1993

31

Photonic integrated tunable receivers with optical preamplifiers for direct detection

Chuang, Z. M., Mondry, M. J., Young, D. B., Cohen, D. A., Coldren, L. A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 590 KB

english, 1993

32

Demonstration of demultiplexing with a rocking filter fiber

Krautschik, C. G., Wigley, P., Stegeman, G. I., Stolen, R. H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 491 KB

english, 1993

33

Nonalloyed ohmic contacts to n-Si using a strained Si0.50Ge0.50 buffer layer

Liou, Hsing-Kuen, Yang, Edward S., Tu, K. N.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 568 KB

english, 1993

34

Phenomenological theory of cuprate superconductivity

Rabinowitz, Mario, McMullen, T.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 441 KB

english, 1993

35

Effects of propane and methane on carbonization and surface morphology in heteroepitaxial growth of β-SiC films on (100) Si via chemical vapor deposition

Bahavar, B., Chaudhry, M. I., McCluskey, R. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 653 KB

english, 1993

36

Iodine doping in mercury cadmium telluride (Hg1−xCdxTe) grown by direct alloy growth using metalorganic chemical vapor deposition

Murakami, S., Okamoto, T., Maruyama, K., Takigawa, H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 510 KB

english, 1993

37

Damage accumulation during high-dose, O+ implantation in Si

Holland, O. W., Zhou, D. S., Thomas, D. K.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 615 KB

english, 1993

38

In-plane alignment of a-axis oriented YBa2Cu3Ox thin films

Mukaida, Masashi, Miyazawa, Shintaro

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 623 KB

english, 1993

39

Minimum thickness MgO buffer layers for YBa2Cu3O7−x/GaAs structures: Assessment using photoluminescence of multiple-quantum-well structures

Tseng, M. Z., Hu, S. Y., Chang, Y. L., Jiang, W. N., Hu, E. L.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 515 KB

english, 1993

40

Assessment of implantation damage by backscatter Kikuchi diffraction in the scanning electron microscope

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 521 KB

english, 1993

41

Low dark current infrared hot-electron transistor for 77 K operation

Choi, K. K., Tidrow, M. Z., Taysing-Lara, M., Chang, W. H., Kuan, C. H., Farley, C. W., Chang, F.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 583 KB

english, 1993

42

Evidence for hydrogen accumulation at strained layer heterojunctions

Sobiesierski, Z., Clegg, J. B.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 585 KB

english, 1993

43

Fabrication of high-quality superconductor-insulator-superconductor junctions on thin SiN membranes

Garcia, Edouard, Jacobson, Brian R., Hu, Qing

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 566 KB

english, 1993

44

Measurement of femtosecond electron bunches from metal photocathodes

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 483 KB

english, 1993

45

Self-aligned passivation on copper interconnection durability against oxidizing ambient annealing

Itow, Hitoshi, Nakasaki, Yasushi, Minamihaba, Gaku, Suguro, Kyoichi, Okano, Haruo

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 508 KB

english, 1993

46

Fabrication and Raman scattering studies of one-dimensional nanometer structures in (110) silicon

Chu, An-Shyang, Zaidi, Saleem H., Brueck, S. R. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 639 KB

english, 1993

47

Strong room-temperature photoluminescence of hydrogenated amorphous silicon oxide and its correlation to porous silicon

Lin, Chi-Huei, Lee, Si-Chen, Chen, Yang-Fang

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 554 KB

english, 1993

48

Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy

Bennett, Brian R., Shanabrook, B. V., Wagner, R. J., Davis, John L., Waterman, J. R.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 589 KB

english, 1993

49

Transient velocity overshoot dynamics in GaAs for electric fields ≤ 200 kV/cm

Son, J., Sha, W., Kim, J., Norris, T. B., Whitaker, J. F., Mourou, G. A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 648 KB

english, 1993

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