Volume 66; Issue 1

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Applied Physics Letters
Volume 66; Issue 1

Applied Physics Letters

Volume 66; Issue 1

1

Quantum cascade unipolar intersubband light emitting diodes in the 8–13 μm wavelength region

Sirtori, Carlo, Capasso, Federico, Faist, Jerome, Sivco, Deborah L., Hutchinson, Albert L., Cho, Alfred Y.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 406 KB

english, 1995

2

Kinetic model of element III segregation during molecular beam epitaxy of III-IIIâ-V semiconductor compounds

Dehaese, O., Wallart, X., Mollot, F.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 384 KB

english, 1995

3

Photoluminescence of strained Si1âyCy alloys grown at low temperature

Boucaud, P., Francis, C., LarreÌ, A., Julien, F. H., Lourtioz, J.-M., Bouchier, D., Bodnar, S., Regolini, J. L.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 380 KB

english, 1995

4

Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures

Gendry, M., Drouot, V., Hollinger, G., Mahajan, S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 342 KB

english, 1995

5

Photoluminescence vibrational structure of Si center in chemical-vapor deposited diamond

Gorokhovsky, A. A., Turukhin, A. V., Alfano, R. R., Phillips, W.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 353 KB

english, 1995

6

Demonstration of the proximity effect in YBa2Cu3O7âx edge junctions

Kleinsasser, A. W., Delin, K. A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 290 KB

english, 1995

7

Flux amplification using stochastic superconducting quantum interference devices

R. Rouse, S. Han, J. E. Lukens

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 323 KB

english, 1995

8

Substrate orientation dependence of low-temperature GaAs grown by molecular beam epitaxy

T. M. Cheng, C. Y. Chang, J. H. Huang

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 473 KB

english, 1995

9

Processing and hardness of electrodeposited Ni/Al2O3 nanocomposites

R. R. Oberle, M. R. Scanlon, R. C. Cammarata, P. C. Searson

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 319 KB

english, 1995

10

Elastic and hardness properties of Fe–Ag (001) multilayered thin films

Scanlon, M. R., Cammarata, R. C., Keavney, D. J., Freeland, J. W., Walker, J. C., Hayzelden, C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 311 KB

english, 1995

11

Above-threshold behavior of high-power, single-mode antiresonant reflecting optical waveguide diode lasers

Mawst, L. J., Botez, D., Nabiev, R. F., Zmudzinski, C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 329 KB

english, 1995

12

Microwave microscopy using a superconducting quantum interference device

Black, R. C., Wellstood, F. C., Dantsker, E., Miklich, A. H., Nemeth, D. T., Koelle, D., Ludwig, F., Clarke, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 579 KB

english, 1995

13

P-channel metal–oxide–semiconductor dosimeter fading dependencies on gate bias and oxide thickness

Ristić, Goran, Golubović, Snežana, Pejović, Momčilo

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 313 KB

english, 1995

14

Effect of barrier recombination on the high temperature performance of quaternary multiquantum well lasers

Bernussi, A. A., Temkin, H., Coblentz, D. L., Logan, R. A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 309 KB

english, 1995

15

Anisotropic roughness in Ge/Si superlattices

Headrick, R. L., Baribeau, J.-M., Strausser, Y. E.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 397 KB

english, 1995

16

Reproducible memory effect in the leakage current of epitaxial ferroelectric/conductive perovskite heterostructures

Watanabe, Yukio

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 321 KB

english, 1995

17

Infrared hot-electron transistor with a narrow bandpass filter for high temperature operation

Lee, C. Y., Choi, K. K., Leavitt, R. P., Eastman, L. F.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 342 KB

english, 1995

18

Doping of p-type shallow junctions using electron beam evaporation of boron layers for compatibility with complementary-metal-oxide-semiconductor technology

Zagozdzon-Wosik, W., Pan, D., Davis, M. F., Rusakova, I., Zhang, Z.-H., Rhodes, K.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 536 KB

english, 1995

19

Characterization of InGaAs/GaAs strained-layer quantum wells grown on (311)A GaAs substrates

Takahashi, Mitsuo, Vaccaro, Pablo, Fujita, Kazuhisa, Watanabe, Toshihide

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 310 KB

english, 1995

20

Generation of terahertz radiation using electro-optic crystal mosaics

Carrig, Timothy J., Rodriguez, G., Sharp Clement, Tracy, Taylor, A. J., Stewart, Kevin R.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 304 KB

english, 1995

21

Ultrafast carrier dynamics in GaSb

Pelouch, Wayne S., Schlie, L. A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 315 KB

english, 1995

22

Cuspidal pit formation during the growth of SixGe1−x strained films

Chen, K. M., Jesson, D. E., Pennycook, S. J., Thundat, T., Warmack, R. J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 517 KB

english, 1995

23

Effect of pulse parameters on the deposition rate of hydrogenated amorphous silicon in a modified pulsed plasma discharge

Anandan, C., Mukherjee, C., Seth, Tanay, Dixit, P. N., Bhattacharyya, R.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 247 KB

english, 1995

24

Time-delayed luminescence from oxidized porous silicon after ultraviolet excitation

Kux, A., Kovalev, D., Koch, F.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 249 KB

english, 1995

25

Local mode spectroscopy of the carbon acceptor in GaAs: New experimental aspects

Alt, H. Ch., Dischler, B.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 251 KB

english, 1995

26

Effect of hydrogen ion shower doping in polycrystalline silicon thin-film transistors

Mishima, Y., Takei, M., Matsumoto, N., Uematsu, T., Wakino, U., Kakehi, T., Okabe, M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 264 KB

english, 1995

27

Generation of diamond nuclei on amorphous SiO2 by alternating-current bias microwave plasma chemical vapor deposition

Mao, M. Y., Jin, X. F., Wang, T. P., Xie, J. F., Tan, S. S., Wang, W. Y., Zhang, X. K., Zhuang, Z. C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 475 KB

english, 1995

28

Initial stage of aluminum nitride film growth on 6H-silicon carbide by plasma-assisted, gas-source molecular beam epitaxy

Tanaka, Satoru, Kern, R. Scott, Davis, Robert F.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 868 KB

english, 1995

29

Three-dimensional electron probe roughness analysis of InP sidewalls processed by reactive ion beam etching

Matsutani, Akihiro, Koyama, Fumio, Iga, Kenichi

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 352 KB

english, 1995

30

Multiple-crystal x-ray topographic characterization of periodically domain-inverted KTiOPO4 crystal

Hu, Z. W., Thomas, P. A., Gupta, Mool C., Risk, W. P.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 497 KB

english, 1995

31

On the mobility of n-channel metal–oxide–semiconductor transistors prepared by low-pressure rapid thermal chemical vapor deposition

McLarty, P. K., Misra, V., Hill, W., Wortman, J. J., Hauser, J. R., Morfouli, P., Ouisse, T.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 241 KB

english, 1995

32

Quantitative measurement of the stress transfer function in nickel/polyimide thin film/copper thin film structures

Schadler, L., Noyan, I. C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 259 KB

english, 1995

33

Fabrication of all thin-film YBa2Cu3O7−δ /Pb Josephson tunnel junctions

Katz, A. S., Sun, A. G., Dynes, R. C., Char, K.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 368 KB

english, 1995

34

Multi-quantum-well zero-gap directional coupler with disordered branching waveguides

Shi, S., Li Kam Wa, P., Miller, A., Pamulapati, J., Cooke, P., Dutta, Mitra

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 309 KB

english, 1995

35

On the formation of epitaxial CoSi2 from the reaction of Si with a Co/Ti bilayer

Zhang, S.-L., Cardenas, J., d’Heurle, F. M., Svensson, B. G., Petersson, C. S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 301 KB

english, 1995

36

Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire

Yang, X. H., Schmidt, T. J., Shan, W., Song, J. J., Goldenberg, B.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 310 KB

english, 1995

37

Comment on ‘‘Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces’’ [Appl. Phys. Lett. 64, 1526 (1994)]

Laruelle, F., Bloch, J. I.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 360 KB

english, 1995

38

Response to Comment: ‘‘Comment on ‘Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces’ ’’ [Appl. Phys. Lett. 66, 111 (1995)]

Wang, P. D., Ledentsov, N. N., Sotomayor Torres, C. M., Kop’ev, P. S., Ustinov, V. M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 375 KB

english, 1995

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