Volume 69; Issue 14

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Applied Physics Letters
Volume 69; Issue 14

Applied Physics Letters

Volume 69; Issue 14

1

Deflection detection and feedback actuation using a self‐excited piezoelectric Pb(Zr,Ti)O3 microcantilever for dynamic scanning force microscopy

Itoh, T., Lee, C., Suga, T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 320 KB

english, 1996

2

Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

Grandjean, N., Massies, J., Leroux, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 481 KB

english, 1996

3

Theoretical model for an improved radiation pressure micromotor

Gauthier, R. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 414 KB

english, 1996

4

Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2

Min, K. S., Shcheglov, K. V., Yang, C. M., Atwater, Harry A., Brongersma, M. L., Polman, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 485 KB

english, 1996

5

Influence of the buffer layers on the morphology and the transport properties in InAs/(Al,Ga)Sb quantum wells grown by molecular beam epitaxy

Blank, H.-R., Thomas, M., Wong, K. C., Kroemer, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 473 KB

english, 1996

6

Ultralow-loss broadened-waveguide high-power 2 Î¼m AlGaAsSb/InGaAsSb/GaSb separate-confinement quantum-well lasers

Garbuzov, D. Z., Martinelli, R. U., Lee, H., York, P. K., Menna, R. J., Connolly, J. C., Narayan, S. Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 354 KB

english, 1996

7

Erratum: ââParameterization of the optical functions of amorphous materials in the interband regionââ [Appl. Phys. Lett. 69, 371 (1996)]

Jellison, G. E., Modine, F. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 345 KB

english, 1996

8

Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry

Edwards, N. V., Bremser, M. D., Weeks, T. W., Kern, R. S., Davis, R. F., Aspnes, D. E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 327 KB

english, 1996

9

Electroluminescence from erbium and oxygen coimplanted GaN

Torvik, J. T., Feuerstein, R. J., Pankove, J. I., Qiu, C. H., Namavar, F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 242 KB

english, 1996

10

Er doping of AlN during growth by metalorganic molecular beam epitaxy

MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Hömmerich, U., Wu, X., Schwartz, R. N., Wilson, R. G., Zavada, J. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 281 KB

english, 1996

11

The dose, energy, and time dependence of silicon self-implantation induced transient enhanced diffusion at 750 °C

H. S. Chao, P. B. Griffin, J. D. Plummer, C. S. Rafferty

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 332 KB

english, 1996

12

Nanotubes in boron nitride laser heated at high pressure

Golberg, D., Bando, Y., Eremets, M., Takemura, K., Kurashima, K., Yusa, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 626 KB

english, 1996

13

Electron paramagnetic resonance characterization of nonuniform distribution of hydrogen in silica optical fibers

Li, J., Lehman, R. L., Sigel, G. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 313 KB

english, 1996

14

Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers

Smith, David J., Tsen, S.-C. Y., Chen, Y. P., Sivananthan, S., Posthill, J. B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 863 KB

english, 1996

15

Effect of postdeposition anneal on the resistivitity of p-type polycrystalline diamond films

Sahli, S., Aslam, D. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 1.56 MB

english, 1996

16

Highly active BaTi4O9/RuO2 photocatalyst by polymerized complex method

Kakihana, Matsato, Arima, Momoko, Sato, Tsugio, Yoshida, Kiyohide, Yamashita, Yohichi, Yashima, Matsatomo, Yoshimura, Masahiro

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 325 KB

english, 1996

17

Planar microwave devices fabricated by ion-implantation patterning of high-temperature superconductors

DeGroot, D. C., Rudman, D. A., Zhang, Kuan, Ma, Q. Y., Kato, H., Jaeger, N. A. F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 361 KB

english, 1996

18

Identification of compositionally invariant deep levels introduced by plastic strain in epitaxial Ge0.30Si0.70 and deformed bulk Si

Grillot, P. N., Ringel, S. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 316 KB

english, 1996

19

Experimental investigation of the differential gain in semiconductor lasers and its influence on Q-switching performance

Summers, H. D., Rees, P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 303 KB

english, 1996

20

Evanescent-field amplification in Nd3+-doped fluoride planar waveguide

Ohtsuki, T., Honkanen, S., Peyghambarian, N., Takahashi, M., Kawamoto, Y., Ingenhoff, J., Tervonen, A., Kadono, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 351 KB

english, 1996

21

Cavity–dislocation interactions in Si–Ge and implications for heterostructure relaxation

Follstaedt, D. M., Myers, S. M., Lee, S. R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 742 KB

english, 1996

22

Time-resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) Si

Godlewski, M., Bergman, J. P., Monemar, B., Rossner, U., Barski, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 334 KB

english, 1996

23

Suppression of wavy growth in metalorganic vapor phase epitaxy grown GaInAs/InP superlattices

Bangert, U., Harvey, A. J., Dieker, C., Hardtdegen, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 639 KB

english, 1996

24

Terahertz radiation from superconducting YBa2Cu3O7−δ thin films excited by femtosecond optical pulses

Hangyo, M., Tomozawa, S., Murakami, Y., Tonouchi, M., Tani, M., Wang, Z., Sakai, K., Nakashima, S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 280 KB

english, 1996

25

Enhanced resistance to metal induced crystallization of amorphous Ge in contact with Bi

Missana, T., Afonso, C. N., Petford-Long, A. K., Doole, R. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 661 KB

english, 1996

26

Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β-LiGaO2 substrates

Kung, P., Saxler, A., Zhang, X., Walker, D., Lavado, R., Razeghi, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 436 KB

english, 1996

27

The role of ambient gas scattering effect and lead oxide formation in pulsed laser deposition of lead–zirconate–titanate thin films

Ma, C. S., Hau, S. K., Wong, K. H., Chan, P. W., Choy, C. L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 247 KB

english, 1996

28

Key trade-offs for second harmonic generation in poled polymers

Otomo, Akira, Jäger, Matthias, Stegeman, George I., Flipse, Marinus C., Diemeer, Mart

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 348 KB

english, 1996

29

Photorefractive grating formation in piezoelectric La3Ga5SiO14:Pr3+ crystals

Dam-Hansen, C., Johansen, P. M., Fridkin, V. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 275 KB

english, 1996

30

Impact of surface stoichiometry control during the initial stages of growth on the stacking fault concentration in ZnSe epilayers grown by molecular beam epitaxy

Jeon, M. H., Calhoun, L. C., Gila, B. P., Ludwig, M. H., Park, R. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 239 KB

english, 1996

31

Undriven periodic plasma oscillation in electron cyclotron resonance Ar plasma

Lee, Pyung-Woo, Lee, Sang-Won, Chang, Hong-Young

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 261 KB

english, 1996

32

Anomalous ion damage behavior in ZnSe

Yu, Kin Man, Bourret-Courchesne, E. D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 271 KB

english, 1996

33

Nonlinear optical studies of single crystal films of N–(4-nitrophenyl)–L–prolinol

Quintero-Torres, R., Thakur, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 269 KB

english, 1996

34

Reduction in flux divergence at vias for improved electromigration in multilayered AlCu interconnects

Ting, Larry, Hong, Qi-Zhong, Hsu, Wei-Yung

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 237 KB

english, 1996

35

Erratum: ‘‘PtIn2 ohmic contacts to n-GaAs via an In-Ga exchange mechanism’’ [Appl. Phys. Lett. 68, 96 (1996)]

Chen, D. Y., Chang, Y. A., Swenson, D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 208 KB

english, 1996

36

Realization of optically pumped second-order GaInN-distributed-feedback lasers

Hofmann, R., Gauggel, H.-P., Griesinger, U. A., Gräbeldinger, H., Adler, F., Ernst, P., Bolay, H., Härle, V., Scholz, F., Schweizer, H., Pilkuhn, M. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 247 KB

english, 1996

37

Low noise high-temperature superconducting bolometers for infrared imaging

Berkowitz, S. J., Hirahara, A. S., Char, K., Grossman, E. N.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 1.88 MB

english, 1996

38

Erratum: ‘‘Measurement of elastic impedance with high spatial resolution using acoustic microscopy’’ [Appl. Phys. Lett. 67, 745 (1995)]

Hirsekorn, S., Pangraz, S., Weides, G., Arnold, W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 237 KB

english, 1996

39

Spectral-gate injection seeding in tunable lasers

Peshev, Z. Y., Deleva, A. D., Aneva, Z. I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 308 KB

english, 1996

40

Structure of 3×2, 5×2, and 7×2 reconstructed 3C-SiC(001) surfaces obtained during epitaxial growth: Molecular dynamics simulations

Kitabatake, Makoto, Greene, J. E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 643 KB

english, 1996

41

Fast wavelength switching of semiconductor laser pulses by self-seeding

Huhse, D., Schell, M., Utz, W., Bimberg, D., Williams, J. A. R., Zhang, L., Bennion, I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 311 KB

english, 1996

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