Volume 73; Issue 12

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Applied Physics Letters
Volume 73; Issue 12

Applied Physics Letters

Volume 73; Issue 12

1

Microstructuring of silicon with femtosecond laser pulses

Her, Tsing-Hua, Finlay, Richard J., Wu, Claudia, Deliwala, Shrenik, Mazur, Eric

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 642 KB

english, 1998

2

Real-time x-ray diffraction to examine elastic–plastic deformation in shocked lithium fluoride crystals

Rigg, P. A., Gupta, Y. M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 288 KB

english, 1998

3

Centimeter scale atomic force microscope imaging and lithography

Minne, S. C., Adams, J. D., Yaralioglu, G., Manalis, S. R., Atalar, A., Quate, C. F.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 691 KB

english, 1998

4

Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

Takeuchi, Tetsuya, Wetzel, Christian, Yamaguchi, Shigeo, Sakai, Hiromitsu, Amano, Hiroshi, Akasaki, Isamu, Kaneko, Yawara, Nakagawa, Shigeru, Yamaoka, Yoshifumi, Yamada, Norihide

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 377 KB

english, 1998

5

AlGaN/GaN quantum well ultraviolet light emitting diodes

Han, J., Crawford, M. H., Shul, R. J., Figiel, J. J., Banas, M., Zhang, L., Song, Y. K., Zhou, H., Nurmikko, A. V.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 316 KB

english, 1998

6

Microstructural evidence on direct contact of Au/Ge/Ni/Au ohmic metals to InGaAs channel in pseudomorphic high electron mobility transistor with undoped cap layer

Lee, Jong-Lam, Kim, Yi-Tae, Lee, Jeong Yong

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 335 KB

english, 1998

7

Spectroscopic ellipsometry characterization of (InGa)N on GaN

Wagner, J., Ramakrishnan, A., Behr, D., Obloh, H., Kunzer, M., Bachem, K.-H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 301 KB

english, 1998

8

Luminescence quenching in Er-doped BaTiO[sub 3] thin films

Yi, G.-C., Block, B. A., Ford, G. M., Wessels, B. W.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 285 KB

english, 1998

9

Composition and crystal structure of carbon nitride films prepared by the electron cyclotron resonance plasma sputtering method

Tani, Youji, Aoi, Yoshifumi, Kamijo, Eiji

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 337 KB

english, 1998

10

Resonant Raman scattering in polycrystalline silicon thin films

Paillard, V., Puech, P., Laguna, M. A., Temple-Boyer, P., Caussat, B., Couderc, J. P., de Mauduit, B.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 242 KB

english, 1998

11

An electro-optic device based on field-controlled anchoring of a nematic liquid crystal

Jägemalm, P., Komitov, L., Barbero, G.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 267 KB

english, 1998

12

Theoretical background of the optical charging spectroscopy method used for investigation of trapping levels

Pintilie, I., Pintilie, L., Petre, D., Tivarus, C., Botila, T.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 330 KB

english, 1998

13

Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films

Kim, Ig-Hyeon, Park, Hyeong-Soo, Park, Yong-Jo, Kim, Taeil

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 520 KB

english, 1998

14

Transport across conducting ferromagnetic oxide/metal interfaces

Mieville, Laurent, Worledge, Daniel, Geballe, T. H., Contreras, Ramiro, Char, K.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 344 KB

english, 1998

15

Rapid imaging of calcite crystal growth using atomic force microscopy with small cantilevers

Paloczi, George T., Smith, Bettye L., Hansma, Paul K., Walters, Deron A., Wendman, Mark A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 490 KB

english, 1998

16

A normal incidence p-type strain layer quantum well infrared photodetector with 19.2 μm peak detection wavelength

Chu, J., Li, Sheng S., Singh, A., Ho, P.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 317 KB

english, 1998

17

Pulsed laser deposition of oxides: Why the optimum rate is about 1 Å per pulse

Strikovski, Mikhail, Miller, John H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 328 KB

english, 1998

18

High-frequency beam steering induced by switching of high-order transverse modes in vertical cavity surface emitting lasers

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 321 KB

english, 1998

19

Self-defined AlAs-oxide–current-aperture buried heterostructure vertical cavity surface-emitting laser

Choi, Won-Jin, Dapkus, P. Daniel

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 1.03 MB

english, 1998

20

Gain bandwidth and noise characteristics of millimeter-wave YBa[sub 2]Cu[sub 3]O[sub 7] hot-electron bolometer mixers

Li, C.-T., Deaver, B. S., Lee, Mark, Weikle, R. M., Rao, R. A., Eom, C. B.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 316 KB

english, 1998

21

Temperature dependence of the growth rate for nanocrystalline diamond films deposited from an Ar/CH[sub 4] microwave plasma

McCauley, Thomas G., Gruen, Dieter M., Krauss, Alan R.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 336 KB

english, 1998

22

Theory of linear electro-optic effect near the E[sub 1] and the E[sub 1]+Δ[sub 1] energies

Chen, Y. H., Yang, Z.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 364 KB

english, 1998

23

An analysis of temperature dependent photoluminescence line shapes in InGaN

Teo, K. L., Colton, J. S., Yu, P. Y., Weber, E. R., Li, M. F., Liu, W., Uchida, K., Tokunaga, H., Akutsu, N., Matsumoto, K.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 264 KB

english, 1998

24

Dielectric anomaly in strontium bismuth tantalate thin films

Takemura, Koichi, Noguchi, Takehiro, Hase, Takashi, Miyasaka, Yoichi

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 248 KB

english, 1998

25

Experimental evidence for a dual vacancy–interstitial mechanism of self-diffusion in silicon

Ural, A., Griffin, P. B., Plummer, J. D.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 254 KB

english, 1998

26

Anisotropic apertures for polarization-stable laterally oxidized vertical-cavity lasers

Chua, C. L., Thornton, R. L., Treat, D. W., Donaldson, R. M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 303 KB

english, 1998

27

Time resolved photoluminescence investigations of polyacetylene derivatives

Wang, Hui, Wong, Kam Sam

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 259 KB

english, 1998

28

Fabrication of high-temperature superconducting Josephson junctions on substrates patterned by focused ion beam

Chen, C.-H., Jin, I., Pai, S. P., Dong, Z. W., Lobb, C. J., Venkatesan, T., Edinger, K., Orloff, J., Melngailis, J.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 1.19 MB

english, 1998

29

Comment on “Properties of interface-engineered high T[sub c] Josephson junctions” [Appl. Phys. Lett. 71, 2526 (1997)]

Tinchev, S. S., Alexandrova, S.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 234 KB

english, 1998

30

Highly sensitive photopolymerizable dry film for use in real time holography

Blaya, S., Mallavia, R., Carretero, L., Fimia, A., Madrigal, R. F.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 255 KB

english, 1998

31

Response to ‘Comment on “Properties of interface-engineered high T[sub c] Josephson junctions” ’ [Appl. Phys. Lett. 73, 1745 (1998)]

Moeckly, B. H., Char, K.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 220 KB

english, 1998

32

Collective effects of interface roughness and alloy disorder in In[sub x]Ga[sub 1−x]N/GaN multiple quantum wells

Zeng, K. C., Smith, M., Lin, J. Y., Jiang, H. X.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 373 KB

english, 1998

33

Optical activation of Be implanted into GaN

Ronning, C., Carlson, E. P., Thomson, D. B., Davis, R. F.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 251 KB

english, 1998

34

Monte Carlo simulation of the induced signal in semi-insulating GaAs detectors

Cola, Adriano, Reggiani, Lino, Vasanelli, Lorenzo

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 264 KB

english, 1998

35

Near-field scanning optical microscopy studies of V-grooved quantum wire lasers

Ben-Ami, U., Nagar, R., Ben-Ami, N., Scheuer, J., Orenstein, M., Eisenstein, G., Lewis, A., Kapon, E., Reinhardt, F., Ils, P., Gustafsson, A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 562 KB

english, 1998

36

Nanostructure of ordering variants in (Al[sub x]Ga[sub 1−x])[sub 0.52]In[sub 0.48]P grown on different vicinal GaAs substrates

Dörr, U., Kalt, H., Send, W., Gerthsen, D., Mowbray, D. J., Button, C. C.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 594 KB

english, 1998

37

Fabrication of midgap metal gates compatible with ultrathin dielectrics

Buchanan, D. A., McFeely, F. R., Yurkas, J. J.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 246 KB

english, 1998

38

Influence of tellurium doping on step bunching of GaAs(001) vicinal surfaces grown by organometallic vapor phase epitaxy

Lee, S. H., Stringfellow, G. B.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 481 KB

english, 1998

39

Vertical device architecture by molding of organic-based thin film transistor

Garnier, Francis, Hajlaoui, Riadh, El Kassmi, Mohamed

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 367 KB

english, 1998

40

Suppressed diffusion of boron and carbon in carbon-rich silicon

Rücker, H., Heinemann, B., Röpke, W., Kurps, R., Krüger, D., Lippert, G., Osten, H. J.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 328 KB

english, 1998

41

Ordering nanometer-scale magnets using bacterial thread templates

Field, M., Smith, C. J., Awschalom, D. D., Mendelson, N. H., Mayes, E. L., Davis, S. A., Mann, S.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 530 KB

english, 1998

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