Volume 73; Issue 16

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Applied Physics Letters
Volume 73; Issue 16

Applied Physics Letters

Volume 73; Issue 16

1

Fabrication of single-crystal lithium niobate films by crystal ion slicing

Levy, M., Osgood, R. M., Liu, R., Cross, L. E., Cargill, G. S., Kumar, A., Bakhru, H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 338 KB

english, 1998

2

Visualization of 10 μm surface acoustic waves by stroboscopic x-ray topography

Zolotoyabko, E., Shilo, D., Sauer, W., Pernot, E., Baruchel, J.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 568 KB

english, 1998

3

Strain compensated In1-xGaxAs(x≪0.47) quantum well photodiodes for extended wavelength operation

Dries, J. Christopher, Gokhale, Milind R., Thomson, K. John, Forrest, Stephen R., Hull, Robert

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 491 KB

english, 1998

4

Mono-sized single-wall carbon nanotubes formed in channels of AlPO[sub 4]-5 single crystal

Tang, Z. K., Sun, H. D., Wang, J., Chen, J., Li, G.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 418 KB

english, 1998

5

Relaxor behavior and electromechanical properties of Pb(Mg[sub 1/3]Nb[sub 2/3])O[sub 3] thin films

Kighelman, Z., Damjanovic, D., Seifert, A., Sagalowicz, L., Setter, N.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 478 KB

english, 1998

6

Dielectric properties of epitaxial BaTiO[sub 3] thin films

Hoerman, B. H., Ford, G. M., Kaufmann, L. D., Wessels, B. W.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 335 KB

english, 1998

7

Photoinduced and thermal stress in silicon microcantilevers

Datskos, Panos G., Rajic, Slobodan, Datskou, Irene

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 323 KB

english, 1998

8

Preferential growth of cubic GaN on sapphire (0001) substrates by metal organic molecular beam epitaxy

Kurobe, T., Sekiguchi, Y., Suda, J., Yoshimoto, M., Matsunami, H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 671 KB

english, 1998

9

Dielectric breakdown of ferromagnetic tunnel junctions

Oepts, W., Verhagen, H. J., de Jonge, W. J. M., Coehoorn, R.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 359 KB

english, 1998

10

Refractive index and absorption of GaAs quantum wells across excitonic resonances

Marquezini, M. V., Tignon, J., Hasche, T., Chemla, D. S.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 332 KB

english, 1998

11

Near-field scanning photoluminescence measurements using an uncoated fiber tip: A potential high resolution diagnostic technique for semiconductor devices

Song, Ki-Bong, Bae, Ji-Eun, Cho, Kyuman, Yim, Sang-Youp, Park, Seung-Han

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 388 KB

english, 1998

12

Surface-emitting, distributed-feedback diode lasers with uniform near-field intensity profile

Lopez, James, Kasraian, Masoud, Botez, Dan

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 322 KB

english, 1998

13

Direct-coupled second-order superconducting quantum interference device gradiometer from single layer of high temperature superconductor

Lee, Soon-Gul, Hwang, Yunseok, Nam, Byung-Chang, Kim, Jin-Tae, Kim, In-Seon

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 380 KB

english, 1998

14

Gettering of Cu and Ni in mega-electron-volt ion-implanted epitaxial silicon

Koveshnikov, Sergei, Kononchuk, Oleg

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 337 KB

english, 1998

15

ZnSTe-based Schottky barrier ultraviolet detectors with nanosecond response time

Ma, Z. H., Sou, I. K., Wong, K. S., Yang, Z., Wong, G. K. L.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 308 KB

english, 1998

16

Demonstration of a current-controlled three-terminal Nb–In[sub x]Ga[sub 1−x]As/InP Josephson contact

Schäpers, Th., Malindretos, J., Neurohr, K., Lachenmann, S., van der Hart, A., Crecelius, G., Hardtdegen, H., Lüth, H., Golubov, A. A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 353 KB

english, 1998

17

Formation of epitaxial CoSi[sub 2] spike in Co/Si[sub 3]N[sub 4]/Si(100) system and its crystallographic structure

Park, Ji-Soo, Sohn, Dong Kyun, Kim, Yeongcheol, Bae, Jong-Uk, Lee, Byung Hak, Byun, Jeong Soo, Kim, Jae Jeong

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 717 KB

english, 1998

18

Fabrication and characterization of small tunnel junctions through a thin dielectric membrane

Aassime, A., Manninen, A. J., Pekola, J. P.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 385 KB

english, 1998

19

Intracavity white-light continuum generation in a femtosecond Ti:sapphire oscillator

Likforman, J.-P., Alexandrou, A., Joffre, M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 384 KB

english, 1998

20

Analysis of terahertz pulse measurement with a chirped probe beam

Sun, F. G., Jiang, Zhiping, Zhang, X.-C.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 454 KB

english, 1998

21

Number of Cu atom(s) in the 1.014 eV photoluminescence copper center and the center’s model in silicon crystal

Nakamura, M., Ishiwari, S., Tanaka, A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 317 KB

english, 1998

22

Energy levels of Zn in Si[sub 1−X]Ge[sub X] alloys

Voß, S., Bracht, H., Stolwijk, N. A., Kringho̸j, P., Nylandsted Larsen, A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 377 KB

english, 1998

23

Comment on “Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy” [Appl. Phys. Lett. 71, 3543 (1997)]

De Padova, P., Perfetti, P., Pizzoferrato, R., Casalboni, M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 477 KB

english, 1998

24

Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth

Bidnyk, S., Little, B. D., Cho, Y. H., Krasinski, J., Song, J. J., Yang, W., McPherson, S. A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 314 KB

english, 1998

25

Photoluminescence decay dynamics of ion-irradiated porous silicon: Evidence for the absence of carrier migration

Tanaka, Satoshi, Koyama, Hideki, Koshida, Nobuyoshi

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 243 KB

english, 1998

26

Erratum: “Effect of crystal phases on refractive index profiles of annealed proton-exchanged waveguides in X-cut LiTaO[sub 3]” [Appl. Phys. Lett. 73, 423 (1998)]

Maring, D. B., Tavlykaev, R. F., Ramaswamy, R. V., Korkishko, Yu. N., Fedorov, V. A., Zavada, J. M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 225 KB

english, 1998

27

Superconductor–normal–superconductor Josephson junctions fabricated by oxygen implantation into YBa[sub 2]Cu[sub 3]O[sub 7−δ]

Kahlmann, F., Engelhardt, A., Schubert, J., Zander, W., Buchal, Ch., Hollkott, J.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 272 KB

english, 1998

28

Electrical properties of wafer-bonded GaAs/Si heterojunctions

Zhou, Y. C., Zhu, Z. H., Crouse, D., Lo, Y. H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 261 KB

english, 1998

29

Effect of curvature and stress on reaction rates at solid interfaces

Tersoff, J., Tu, Yuhai, Grinstein, G.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 263 KB

english, 1998

30

Formation of CoTi barrier and increased thermal stability of CoSi[sub 2] film in Ti capped Co/Si(100) system

Sohn, Dong Kyun, Park, Ji-Soo, Lee, Byung Hak, Bae, Jong-Uk, Byun, Jeong Soo, Kim, Jae Jeong

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 328 KB

english, 1998

31

Void-like defects in annealed Czochralski silicon

Gao, M., Duan, X. F., Peng, L.-M., Li, J.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 672 KB

english, 1998

32

Flux pinning in ternary (Nd[sub 0.33]Eu[sub 0.33]Gd[sub 0.33])Ba[sub 2]Cu[sub 3]O[sub y] melt-processed superconductors

Koblischka, M. R., Muralidhar, M., Murakami, M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 272 KB

english, 1998

33

Ultraviolet cathodoluminescence from diamond layers after doping by means of boron-ion implantation

Prins, Johan F.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 246 KB

english, 1998

34

Linear and nonlinear optical properties of stepped In[sub x]Ga[sub 1−x]As/GaAs quantum wells

Tomassini, N., D’Andrea, A., Righini, M., Selci, S., Calcagnile, L., Cingolani, R., Schiumarini, D., Simeone, M. G.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 283 KB

english, 1998

35

Observation of a leaky wave guide resonance mode in polycrystalline silicon structures using infrared spectroscopic ellipsometry

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 266 KB

english, 1998

36

Picojoule and submillisecond calorimetry with micromechanical probes

Nakagawa, Y., Schäfer, R., Güntherodt, H.-J.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 280 KB

english, 1998

37

Solvent-driven chemical motor

Mitsumata, Tetsu, Ikeda, Kazuo, Gong, Jian Ping, Osada, Yoshihito

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 664 KB

english, 1998

38

Emission process in bilayer organic light emitting diodes

Hochfilzer, C., Leising, G., Gao, Y., Forsythe, E., Tang, C. W.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 254 KB

english, 1998

39

Significantly enhanced creep resistance in low-melting-point solders through nanoscale oxide dispersions

Mavoori, H., Jin, S.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 413 KB

english, 1998

40

Controlled ink-jet printing and deposition of organic polymers and solid particles

Perçin, Gökhan, Lundgren, Thomas S., Khuri-Yakub, Butrus T.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 1.61 MB

english, 1998

41

Raman imaging of patterned silicon using a solid immersion lens

Poweleit, C. D., Gunther, A., Goodnick, S., Menéndez, José

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 344 KB

english, 1998

42

Characteristics of high quality tantalum oxide films deposited by photoinduced chemical vapor deposition

Zhang, Jun-Ying, Lim, Boon, Boyd, Ian W., Dusastre, Vincent

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 316 KB

english, 1998

43

Origin of the charge to breakdown distributions in thin silicon dioxide films

Okhonin, S., Fazan, P.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 319 KB

english, 1998

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