Volume 75; Issue 9

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Applied Physics Letters
Volume 75; Issue 9

Applied Physics Letters

Volume 75; Issue 9

1

Nanotube composite carbon fibers

Andrews, R., Jacques, D., Rao, A. M., Rantell, T., Derbyshire, F., Chen, Y., Chen, J., Haddon, R. C.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 525 KB

english, 1999

2

Temperature-dependent morphology of three-dimensional InAs islands grown on silicon

Sharma, P. C., Alt, K. W., Yeh, D. Y., Wang, K. L.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 551 KB

english, 1999

3

Efficient channel-waveguide laser in Nd:GGG at 1.062 Î¼m wavelength

Gerhardt, R., Kleine-BoÌrger, J., Beilschmidt, L., Frommeyer, M., DoÌtsch, H., Gather, B.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 312 KB

english, 1999

4

GaN homoepitaxial layers grown by metalorganic chemical vapor deposition

Leszczynski, M., Beaumont, B., Frayssinet, E., Knap, W., Prystawko, P., Suski, T., Grzegory, I., Porowski, S.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 291 KB

english, 1999

5

Red light emission by photoluminescence and electroluminescence from Eu-doped GaN

Heikenfeld, J., Garter, M., Lee, D. S., Birkhahn, R., Steckl, A. J.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 365 KB

english, 1999

6

High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices

Wang, C. A., Choi, H. K., Ransom, S. L., Charache, G. W., Danielson, L. R., DePoy, D. M.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 430 KB

english, 1999

7

Nonlinear changes in plasma and crater properties during laser ablation of Si

Liu, H. C., Mao, X. L., Yoo, J. H., Russo, R. E.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 231 KB

english, 1999

8

Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation

Craciun, Valentin, Boyd, Ian W., Hutton, Bernie, Williams, David

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 231 KB

english, 1999

9

Rotating-mode content of gyrotron output

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 249 KB

english, 1999

10

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

Kuskovsky, I., Li, D., Neumark, G. F., Bondarev, V. N., Pikhitsa, P. V.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 231 KB

english, 1999

11

Discrimination between nuclear recoils and electron recoils by simultaneous detection of phonons and scintillation light

Meunier, P., Bravin, M., Bruckmayer, M., Giordano, S., Loidl, M., Meier, O., Pröbst, F., Seidel, W., Sisti, M., Stodolsky, L., Uchaikin, S., Zerle, L.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 424 KB

english, 1999

12

Terahertz optical gain based on intersubband transitions in optically pumped semiconductor quantum wells: Coherent pump–probe interactions

Liu, Ansheng, Ning, C. Z.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 299 KB

english, 1999

13

Raman imaging of stress in a SiGe/Si photoelastic optical channel waveguide structure

Rho, H., Jackson, Howard E., Weiss, B. L.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 520 KB

english, 1999

14

Observation of a non Fowler–Nordheim field-induced electron emission phenomenon from chemical vapor deposited diamond films

Chen, J., Deng, S. Z., Xu, N. S., Wu, K. H., Wang, E. G.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 580 KB

english, 1999

15

Effects of cobalt silicidation and postannealing on void defects at the sidewall spacer edge of metal–oxide–silicon field-effect transistors

Kim, Yeong-Cheol, Kim, Jongchae, Choy, Jun-Ho, Park, Ju-Chul, Choi, Hong-Min

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 514 KB

english, 1999

16

Resonant-tunneling diodes with emitter prewells

Boykin, Timothy B., Bowen, R. Chris, Klimeck, Gerhard, Lear, Kevin L.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 295 KB

english, 1999

17

Temperature dependence of the reversal mechanism in spin-valve films

Portier, X., Petford-Long, A. K., Anthony, T. C., Brug, J. A.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 806 KB

english, 1999

18

Two-dimensional metallodielectric photonic crystal with a large band gap

Jin, Chongjun, Cheng, Bingying, Man, Baoyuan, Zhang, Daozhong, Ban, Shouzheng, Sun, Bo, Li, Lieming, Zhang, Xiangdong, Zhang, Zhaoqing

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 302 KB

english, 1999

19

Accommodation of excess Ti in a (Ba, Sr)TiO[sub 3] thin film with 53.4% Ti grown on Pt/SiO[sub 2]/Si by metalorganic chemical-vapor deposition

Levin, I., Leapman, R. D., Kaiser, D. L., van Buskirk, P. C., Bilodeau, S., Carl, R.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 668 KB

english, 1999

20

Kelvin probe and scanning tunneling microscope characterization of Langmuir–Blodgett sapphyrin films

Goletti, C., Sgarlata, A., Motta, N., Chiaradia, P., Paolesse, R., Angelaccio, A., Drago, M., Di Natale, C., D’Amico, A., Cocco, M., Troitsky, V. I.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 351 KB

english, 1999

21

Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs

Dowd, P., Braun, W., Smith, David J., Ryu, C. M., Guo, C.-Z., Chen, S. L., Koelle, U., Johnson, S. R., Zhang, Y.-H.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 322 KB

english, 1999

22

Magnetic composite materials obtained by swift heavy-ion irradiation of yttrium iron garnet ceramics

Fnidiki, A., Juraszek, J., Teillet, J., Studer, F.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 292 KB

english, 1999

23

A method of highly efficient hydrolyzation oxidation of III–V semiconductor lattice matched to indium phosphide

Koley, B., Johnson, F. G., King, O., Saini, S. S., Dagenais, M.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 509 KB

english, 1999

24

Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

Krestnikov, I. L., Lundin, W. V., Sakharov, A. V., Semenov, V. A., Usikov, A. S., Tsatsul’nikov, A. F., Alferov, Zh. I., Ledentsov, N. N., Hoffmann, A., Bimberg, D.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 309 KB

english, 1999

25

Design and performance of a space based high temperature superconductivity experiment

Polturak, E., Koren, G., Ayalon, M., Flohr, I., Waller, R., Guelman, M.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 287 KB

english, 1999

26

Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices with a type-II band alignment

Maksimov, A. A., Zaitsev, S. V., Tartakovskii, I. I., Kulakovskii, V. D., Yakovlev, D. R., Ossau, W., Keim, M., Reuscher, G., Waag, A., Landwehr, G.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 307 KB

english, 1999

27

Effect of external feedback on lasing in random media

Cao, H., Zhao, Y. G., Liu, X., Seelig, E. W., Chang, R. P. H.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 295 KB

english, 1999

28

Cooling of a semiconductor by luminescence up-conversion

Finkeißen, E., Potemski, M., Wyder, P., Viña, L., Weimann, G.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 383 KB

english, 1999

29

Electro-optic recovery of the photoquenching effect

Rubinger, R. M., de Oliveira, A.G., Ribeiro, G. M., Bezzera, J. C., Moreira, M. V. B., Chacham, H.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 294 KB

english, 1999

30

High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope

Asnin, V. M., Pollak, Fred H., Ramer, J., Schurman, M., Ferguson, I.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 240 KB

english, 1999

31

Ion beam synthesized Ru[sub 2]Si[sub 3]

Sharpe, J. S., Chen, Y. L., Gwilliam, R. M., Kewell, A. K., McKinty, C. N., Lourenço, M. A., Shao, G., Homewood, K. P., Reeson Kirkby, Karen

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 262 KB

english, 1999

32

The reduction of base dopant outdiffusion in SiGe heterojunction bipolar transistors by carbon doping

Gruhle, A., Kibbel, H., König, U.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 237 KB

english, 1999

33

A regime of the yield point of silicon at high temperatures

Siethoff, Hans, Brion, Hans Georg, Schröter, Wolfgang

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 227 KB

english, 1999

34

Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells

Sun, Chi-Kuang, Liang, Jian-Chin, Stanton, Christopher J., Abare, Amber, Coldren, Larry, DenBaars, Steven P.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 230 KB

english, 1999

35

Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon

Kögler, R., Peeva, A., Anwand, W., Brauer, G., Skorupa, W., Werner, P., Gösele, U.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 383 KB

english, 1999

36

Parallel nanodevice fabrication using a combination of shadow mask and scanning probe methods

Lüthi, Roli, Schlittler, Reto R., Brugger, Jürgen, Vettiger, Peter, Welland, Mark E., Gimzewski, James K.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 468 KB

english, 1999

37

Realization of an axially aligned Au-ion source of atomic size

Purcell, S. T., Binh, Vu Thien

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 454 KB

english, 1999

38

Analysis of the improved contact resistance in metal-p[sup +] silicon Schottky barriers using the BF[sub 2]/B mixed implantation

Lee, Jung-Ho, Yeo, In-Seok, Lee, Jeong-Youb, Lee, Sahng-Kyoo

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 335 KB

english, 1999

39

Optimized configuration for reflective bistable twisted nematic displays

Zhuang, Zhizhong, Kim, Young Jin, Patel, J. S.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 222 KB

english, 1999

40

Charge storage in CeO[sub 2]/Si/CeO[sub 2]/Si(111) structures by electrostatic force microscopy

Jones, J. T., Bridger, P. M., Marsh, O. J., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 278 KB

english, 1999

41

Ultra-high-finesse IV–VI microcavities for the midinfrared

Schwarzl, T., Heiß, W., Springholz, G.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 325 KB

english, 1999

42

Correlation between nano-scale friction and wear of boron carbide films deposited by dc-magnetron sputtering

Prioli, R., Reigada, D. C., Freire, F. L.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 351 KB

english, 1999

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