Volume 166; Issue 1-4

Applied Surface Science

Volume 166; Issue 1-4
10

Interfacial reaction of erbium on homoepitaxial diamond (100) films

Year:
2000
Language:
english
File:
PDF, 141 KB
english, 2000
11

Formation of the Co/Si(111)7×7 interface: AES- and EELS-study

Year:
2000
Language:
english
File:
PDF, 181 KB
english, 2000
14

The morphology of high-index GaAs surfaces

Year:
2000
Language:
english
File:
PDF, 413 KB
english, 2000
22

Atomic and electronic structure of epitaxial PbS on InP(110) and InP(001)

Year:
2000
Language:
english
File:
PDF, 898 KB
english, 2000
23

Surface structure and local bonding on the Si(111)–Ce surface

Year:
2000
Language:
english
File:
PDF, 286 KB
english, 2000
27

Oxide formation on the CdTe(111)A (1×1) surface

Year:
2000
Language:
english
File:
PDF, 152 KB
english, 2000
28

Atomic hydrogen cleaning, nitriding and annealing InSb (100)

Year:
2000
Language:
english
File:
PDF, 516 KB
english, 2000
30

Electric field effects in ZnSe/BeTe superlattices

Year:
2000
Language:
english
File:
PDF, 144 KB
english, 2000
31

Surface morphology of MnAs overlayers grown by MBE on GaAs(111)B substrates

Year:
2000
Language:
english
File:
PDF, 847 KB
english, 2000
35

Tracing the valence band maximum during epitaxial growth of HfS2 on WSe2

Year:
2000
Language:
english
File:
PDF, 316 KB
english, 2000
36

Polarization fields in nitride nanostructures: 10 points to think about

Year:
2000
Language:
english
File:
PDF, 110 KB
english, 2000
37

Photoemission studies of barrier heights in metal–semiconductor interfaces and heterojunctions

Year:
2000
Language:
english
File:
PDF, 361 KB
english, 2000
44

Organic semiconductor interfaces: electronic structure and transport properties

Year:
2000
Language:
english
File:
PDF, 235 KB
english, 2000
49

Patterned growth on high-index GaAs (311)A substrates

Year:
2000
Language:
english
File:
PDF, 514 KB
english, 2000
53

Surface crystallization of ion-implantation damaged Si95Ge5 on Si(100)

Year:
2000
Language:
english
File:
PDF, 205 KB
english, 2000
56

Strained layer growth of Ga1−xInxP on GaAs (100) and GaP (100) substrates

Year:
2000
Language:
english
File:
PDF, 254 KB
english, 2000
58

Atomic structure of SiO2 at SiO2/Si interfaces

Year:
2000
Language:
english
File:
PDF, 130 KB
english, 2000
59

Electronic structure of ultrathin AlAs(100) layers buried in GaAs

Year:
2000
Language:
english
File:
PDF, 86 KB
english, 2000
64

Defect structure relaxation process in the Si–SiO2 system

Year:
2000
Language:
english
File:
PDF, 117 KB
english, 2000
65

The Auger transistor based on the Al–SiO2–n–Si heterostructure

Year:
2000
Language:
english
File:
PDF, 108 KB
english, 2000
72

Preface

Year:
2000
Language:
english
File:
PDF, 18 KB
english, 2000
73

Author index

Year:
2000
Language:
english
File:
PDF, 56 KB
english, 2000
77

Study of Fe deposition upon a layered compound: GaSe

Year:
2000
Language:
english
File:
PDF, 290 KB
english, 2000
78

Initial processes of a Ni adatom on the Si(001) surface: a first-principles study

Year:
2000
Language:
english
File:
PDF, 193 KB
english, 2000
80

Thin Ag film formation onto Si/SiO2 substrate

Year:
2000
Language:
english
File:
PDF, 107 KB
english, 2000
81

Reconstructions of GaN and InGaN surfaces

Year:
2000
Language:
english
File:
PDF, 365 KB
english, 2000
82

Si surface band-gap shift on top of buried Ge quantum dots

Year:
2000
Language:
english
File:
PDF, 312 KB
english, 2000
84

Raman spectroscopy of surface phonons on Sb-terminated Si(001)

Year:
2000
Language:
english
File:
PDF, 165 KB
english, 2000
89

Misfit dislocations and radiative efficiency of InxGa1−xN/GaN quantum wells

Year:
2000
Language:
english
File:
PDF, 106 KB
english, 2000
90

The interface formation of PTCDA on Se-modified GaAs(100) surfaces

Year:
2000
Language:
english
File:
PDF, 119 KB
english, 2000
92

The status and promise of compliant substrate technology

Year:
2000
Language:
english
File:
PDF, 489 KB
english, 2000
94

Formation energy of threefold coordinated oxygen in SiO2 systems

Year:
2000
Language:
english
File:
PDF, 52 KB
english, 2000
95

Nanocrystals at MBE-grown GaN/GaAs(001) interfaces

Year:
2000
Language:
english
File:
PDF, 340 KB
english, 2000
101

Subject index

Year:
2000
Language:
english
File:
PDF, 138 KB
english, 2000