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Volume 30; Issue 1-4
Main
Applied Surface Science
Volume 30; Issue 1-4
Applied Surface Science
Volume 30; Issue 1-4
1
Editorial Board
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 90 KB
Your tags:
english, 1987
2
Thermal oxidation of silicon: New experimental results and models
Eugene A. Irene
,
R. Ghez
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 883 KB
Your tags:
english, 1987
3
Effect of silicon surface cleaning procedures on oxidation kinetics and surface chemistry
J.M. Delarios
,
C.R. Helms
,
D.B. Kao
,
B.E. Deal
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 460 KB
Your tags:
english, 1987
4
High temperature reaction and defect chemistry at the Si/SiO2 interface
K. Hofmann
,
G.W. Rubloff
,
M. Liehr
,
D.R. Young
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 713 KB
Your tags:
english, 1987
5
Constant current versus constant voltage plasma anodization techniques
Romuald B. Beck
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 404 KB
Your tags:
english, 1987
6
Oxidation of silicon in the afterglow of microwave induced plasmas
C. Vinckier
,
P. Coeckelberghs
,
G. Stevens
,
S. De Jaegere
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 446 KB
Your tags:
english, 1987
7
Effects of low temperature annealing on the electrical properties of plasma grown oxides
K.J. Barlow
,
W. Eccleston
,
S. Taylor
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 257 KB
Your tags:
english, 1987
8
Photo-stimulated CVD of SiNx for GaAs IC applications
Norbert Arnold
,
Lothar Schleicher
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 448 KB
Your tags:
english, 1987
9
Dielectrics for passivation of planar InP/InGaAs diodes
G. Unterbörsch
,
H.G. Bach
,
F. Schmitt
,
R. Schmidt
,
W. Schlaak
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 377 KB
Your tags:
english, 1987
10
Reduction of the concentration of slow insulator states in SiO2/InP-MIS structures
W. Kulisch
,
H. Rombach
,
R. Kassing
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 303 KB
Your tags:
english, 1987
11
Photoluminescence transient response as a tool to “track” the origin of drift phenomena at the InP/insulator interface
S.K. Krawczyk
,
K. Schohe
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 340 KB
Your tags:
english, 1987
12
A new method to determine Si/SiO2 interface recombination parameters using a gate-controlled point-junction diode under illumination
R. Girisch
,
R.P. Mertens
,
R.F. de Keersmaecker
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 355 KB
Your tags:
english, 1987
13
Electrical switching and noise spectrum of Si-SiO2 interface defects generated by hot electrons
M. Bollu
,
F. Koch
,
A. Madenach
,
J. Scholz
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 328 KB
Your tags:
english, 1987
14
A new model for the discharge behaviour of metal-nitride-oxide-silicon (MNOS) non-volatile memory devices
Guido L. Heyns
,
Herman E. Maes
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 409 KB
Your tags:
english, 1987
15
Charge transport and trapping model for scaled nitride-oxide stacked films
K.K. Young
,
C. Hu
,
W.G. Oldham
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 450 KB
Your tags:
english, 1987
16
Characterization of LPCVD and PECVD silicon oxynitride films
F.H.P.M. Habraken
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 708 KB
Your tags:
english, 1987
17
Hydrogen distribution in oxynitride/oxide structures
J.B.Oude Elferink
,
U.A. van der Heide
,
W.M.Arnold Bik
,
F.H.P.M. Habraken
,
W.F. van der Weg
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 380 KB
Your tags:
english, 1987
18
Electrical properties of thin PECVD silicon oxynitride films
L.Do Thanh
,
V. Exner
,
P. Balk
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 307 KB
Your tags:
english, 1987
19
Analysis of thin thermal silicon nitride films on silicon
M.A. Sobolewski
,
C.R. Helms
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 392 KB
Your tags:
english, 1987
20
High field phenomena in thin plasma nitrided SiO2 films
M. El-Sayed
,
J.Camargo Da Costa
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 421 KB
Your tags:
english, 1987
21
Electrical conduction in thin thermally nitrided SiO2 (nitroxide)
X.R. Cheng
,
B.Y. Liu
,
Y.C. Cheng
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 391 KB
Your tags:
english, 1987
22
Ion implantation induced stoichiometric imbalance in SiO2
M. Offenberg
,
P. Balk
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 373 KB
Your tags:
english, 1987
23
Hole capture in SiO2 films after ion implantation
H. Neitzert
,
M. Offenberg
,
P. Balk
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 301 KB
Your tags:
english, 1987
24
Hot electrons in silicon dioxide: Ballistic to steady-state transport
D.J. DiMaria
,
M.V. Fischetti
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 1.24 MB
Your tags:
english, 1987
25
Interface states and impurities in MOS structures with very thin tunneling barriers
P. Balk
,
L.Do Thanh
,
S. Ewert
,
M. Kuball
,
S. Schmitz
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 362 KB
Your tags:
english, 1987
26
Evaluation of channel hot carrier effects in n-MOS transistors at 77 K with the charge pumping technique
P. Heremans
,
Y.-C. Sun
,
G. Groeseneken
,
H.E. Maes
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 306 KB
Your tags:
english, 1987
27
On the nature and energy distribution of defect states caused by hot electrons in Si
A. Asenov
,
M. Bollu
,
F. Koch
,
J. Scholz
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 332 KB
Your tags:
english, 1987
28
Improvement of the Si-SiO2 interface stress resistance of thin gate oxides after channel ion implantation
R.B. Calligaro
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 453 KB
Your tags:
english, 1987
29
Charge storage in MOS structures as affected by avalanche- and photoinjection
S.N. Kuznetsov
,
V.A. Gurtov
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 343 KB
Your tags:
english, 1987
30
Low defect-density polycrystalline silicon for high performance thin film transistors
D.B. Meakin
,
N.A. Economou
,
P.A. Coxon
,
J. Stoemenos
,
A. Lowe
,
P. Migliorato
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 2.98 MB
Your tags:
english, 1987
31
Buried oxide formation in Si by high-dose implantation of oxygen
A.H. van Ommen
,
M.P.A. Viegers
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 1.06 MB
Your tags:
english, 1987
32
Optical and compositional studies of buried oxide layers in silicon formed by high dose implantation
R.J. Chater
,
J.A. Kilner
,
E. Scheid
,
S. Cristoloveneau
,
P.L.F. Hemment
,
K.J. Reeson
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 353 KB
Your tags:
english, 1987
33
Properties of graded group IIa fluoride buffer layers for semiconductor heteroepitaxy
H. Zogg
,
S. Blunier
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 473 KB
Your tags:
english, 1987
34
Subject index
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 1.37 MB
Your tags:
english, 1987
35
Preface
Gilbert Declerck
,
Roger De Keersmaecker
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 100 KB
Your tags:
english, 1987
36
Charge trapping in n-AlxGa1-xAs “insulators” and related device instabilities
T.N. Theis
,
B.D. Parker
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 769 KB
Your tags:
english, 1987
37
Ion beam enhanced deposition of AINxOy alloys on InP
C. Santinelli
,
R. Blanchet
,
P. Viktorovitch
,
F. Benyahia
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 398 KB
Your tags:
english, 1987
38
InP native oxide: A drift factor in InP-MIS
V.V. Pham
,
D. Esteve
,
J. Farré
,
A. El Mahdy
,
M. Ronda
,
J.J. Simonne
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 294 KB
Your tags:
english, 1987
39
Comparative effects of polymide and PECVD silicon nitride as passivating layers on GaAs power MESFET characteristics
G.P. Donzelli
,
B. Gabbrielli
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 263 KB
Your tags:
english, 1987
40
InGaAs/Si3N4 interface obtained in ultrahigh vacuum multipolar plasma: In-situ control by ellipsometry and electrical characterization
P. Boher
,
M. Renaud
,
J.M. Lopez-Villegas
,
J. Schneider
,
J.P. Chane
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 434 KB
Your tags:
english, 1987
41
Determination of Si-SiO2 interface trap properties of p-MOS structures with very thin oxides by conductance measurement
K.K. Hung
,
Y.C. Cheng
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 316 KB
Your tags:
english, 1987
42
Time-dependent response of interface states determined by using differential isothermal transient spectroscopy
J. Esteve
,
J. Samitier
,
H. Altelarrea
,
A. Herms
,
J.R. Morante
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 353 KB
Your tags:
english, 1987
43
Low-temperature ESR study of PbO defects residing in the (111) Si/native oxide interface
A. Stesmans
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 510 KB
Your tags:
english, 1987
44
Individual interface states and their implications for low-frequency noise in MOSFETs
M.J. Kirton
,
M.J. Uren
,
S. Collins
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 350 KB
Your tags:
english, 1987
45
Amphoteric trap modeling of multidielectric scaled SONOS nonvolatile memory structures
Frank R. Libsch
,
Anirban Roy
,
Marvin H. White
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 750 KB
Your tags:
english, 1987
46
Interfacial tunneling barrier heights in triple-layer dielectrics
R. Baunach
,
A. Spitzer
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 328 KB
Your tags:
english, 1987
47
High and low thermal nitridation of SiO2 thin films
B. Balland
,
J.C. Bureau
,
A. Benamar
,
A. Ronda
,
A. Glachant
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 450 KB
Your tags:
english, 1987
48
Nitridation of thin SiO2 films in N2 and NH3 plasmas
P. Fazan
,
M. Dutoit
,
M. Ilegems
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 270 KB
Your tags:
english, 1987
49
Diffusion of group III and V elements in SiO2
A.H. Van Ommen
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 1.24 MB
Your tags:
english, 1987
50
Models and experiments on degradation of oxidized silicon
C.T. Sah
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 87 KB
Your tags:
english, 1987
51
The statistics of dielectric breakdown in MOS capacitors under static and dynamic voltage stress
S.K. Haywood
,
M.M. Heyns
,
R.F. De Keersmaecker
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 490 KB
Your tags:
english, 1987
52
Charge trapping and breakdown in thin SiO2 polysilicon-gate MOS capacitors
M. Dutoit
,
P. Fazan
,
A. Benjelloun
,
M. Ilegems
,
J.-M. Moret
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 321 KB
Your tags:
english, 1987
53
Material properties and characteristics of polysilicon transistors for large area electronics
P. Migliorato
,
D.B. Meakin
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 1.65 MB
Your tags:
english, 1987
54
Some material structural properties of SOI substrates produced by SDB technology
Li Hui
,
Sun Guo-Liang
,
Zhan Juan
,
Tong Qin-Yi
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 449 KB
Your tags:
english, 1987
55
Author index
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 261 KB
Your tags:
english, 1987
56
Valence band electron tunneling in metal-oxide-silicon structures
A. Modelli
Journal:
Applied Surface Science
Year:
1987
Language:
english
File:
PDF, 321 KB
Your tags:
english, 1987
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