Volume 11; Issue 2

Physica status solidi

Volume 11; Issue 2
9

AlGaN based MEMS structures

Year:
2014
Language:
english
File:
PDF, 389 KB
english, 2014
12

Doping and characterization of impurity atoms in Si and Ge nanowires

Year:
2014
Language:
english
File:
PDF, 1017 KB
english, 2014
22

Group III Nitrides

Year:
2014
Language:
english
File:
PDF, 188 KB
english, 2014
24

Viability of the use of thin-film a-SiC:H photodiodes for protein identification

Year:
2014
Language:
english
File:
PDF, 493 KB
english, 2014
27

The (0001)A surface phase diagram

Year:
2014
Language:
english
File:
PDF, 294 KB
english, 2014
28

Side gate AlGaN/GaN FET on silicon and sapphire

Year:
2014
Language:
english
File:
PDF, 324 KB
english, 2014
33

Cover Picture: Phys. Status Solidi C 2/2014

Year:
2014
File:
PDF, 512 KB
2014
34

Back Cover: Phys. Status Solidi C 2/2014

Year:
2014
File:
PDF, 389 KB
2014
35

Issue Information: Phys. Status Solidi C 2/2014

Year:
2014
Language:
english
File:
PDF, 341 KB
english, 2014
36

Contents: Phys. Status Solidi C 2/2014

Year:
2014
Language:
english
File:
PDF, 298 KB
english, 2014