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Volume 44; Issue 8
Main
Russian Microelectronics
Volume 44; Issue 8
Russian Microelectronics
Volume 44; Issue 8
1
Enhanced magnetoresistive effect in the arrays of nickel nanorods on silicon substrates
Fedotova, Yu. A.
,
Ivanov, D. K.
,
Ivanova, Yu. A.
,
Saad, A.
,
Mazanik, A. V.
,
Svito, I. A.
,
Strel’tsov, E. A.
,
Fedotov, A. K.
,
Tyutyunnikov, S. I.
,
Apel’, P. Yu.
Journal:
Russian Microelectronics
Year:
2015
Language:
english
File:
PDF, 273 KB
Your tags:
english, 2015
2
Metal oxide nanoparticles synthesized on porous silicon substrates
Kononova, I. E.
,
Lenshin, A. S.
,
An’chkov, M. G.
,
Moshnikov, V. A.
Journal:
Russian Microelectronics
Year:
2015
Language:
english
File:
PDF, 627 KB
Your tags:
english, 2015
3
Structure investigation of large single crystals of gallium antimonide grown by the Czochralski method in the [100] direction
Ezhlov, V. S.
,
Mil’vidskaya, A. G.
,
Molodtsova, E. V.
,
Mezhennyi, M. V.
Journal:
Russian Microelectronics
Year:
2015
Language:
english
File:
PDF, 562 KB
Your tags:
english, 2015
4
Long-range stresses generated by misfit dislocations in epitaxial films
Trukhanov, E. M.
,
Kolesnikov, A. V.
,
Loshkarev, I. D.
Journal:
Russian Microelectronics
Year:
2015
Language:
english
File:
PDF, 523 KB
Your tags:
english, 2015
5
Diagnostics of the technological characteristics of high–power transistors using relaxation impedance spectrometry of thermal processes
Vaskou, A. S.
,
Niss, V. S.
,
Kononenko, V. K.
,
Turtsevich, A. S.
,
Rubtsevich, I. I.
,
Solov’ev, Ya. A.
,
Kerentsev, A. F.
Journal:
Russian Microelectronics
Year:
2015
Language:
english
File:
PDF, 682 KB
Your tags:
english, 2015
6
Method of determining nondestructive pulsed laser annealing modes for dielectric and semiconductor wafers
Kovalenko, A. F.
,
Vorobiev, A. A.
Journal:
Russian Microelectronics
Year:
2015
Language:
english
File:
PDF, 249 KB
Your tags:
english, 2015
7
Boundary processes in the electrolyte–silicon interface area during the self-organization of the mosaic structure of 3D islets of porous silicon nanocrystallites in the long-term anode etching ofp-Si (100) in electrolyte with an internal current source
Tynyshtykbaev, K. B.
,
Ryabikin, Yu. A.
,
Tokmoldin, S. Zh.
,
Rakymetov, B. A.
,
Aytmukan, T.
,
Abdullin, Kh. A.
Journal:
Russian Microelectronics
Year:
2015
Language:
english
File:
PDF, 1.04 MB
Your tags:
english, 2015
8
Solar cells with a charge pump: Theoretical prospects and technological aspects of the application
Gusev, V. A.
,
Starkov, V. V.
,
Teterskii, A. V.
Journal:
Russian Microelectronics
Year:
2015
Language:
english
File:
PDF, 402 KB
Your tags:
english, 2015
9
Synthesis of porous silicon with silver nanoparticles by low-energy ion implantation
Batalov, R. I.
,
Valeev, V. F.
,
Nuzhdin, V. I.
,
Vorebev, V. V.
,
Osin, Yu. N.
,
Lebedev, D. V.
,
Bukharaev, A. A.
,
Stepanov, A. L.
Journal:
Russian Microelectronics
Year:
2015
Language:
english
File:
PDF, 2.00 MB
Your tags:
english, 2015
10
Cellular automaton model of phase separation during annealing of nonstoichiometric silicon oxide layers
Krasnikov, G. Ya.
,
Zaitsev, N. A.
,
Matyushkin, I. V.
,
Korobov, S. V.
Journal:
Russian Microelectronics
Year:
2015
Language:
english
File:
PDF, 1.77 MB
Your tags:
english, 2015
11
Processes during annealing of Ti–Al–Ni and Ti–Al–Ni–Au contact metallization systems
Vanyukhin, K. D.
,
Zakharchenko, R. V.
,
Kargin, N. I.
,
Pashkov, M. V.
,
Seidman, L. A.
Journal:
Russian Microelectronics
Year:
2015
Language:
english
File:
PDF, 922 KB
Your tags:
english, 2015
12
Determination of the indium arsenide autoepitaxial layers’ thickness by Fourier-Transform Infrared Spectroscopy
Komkov, O. S.
,
Firsov, D. D.
,
Kovalishina, E. A.
,
Petrov, A. S.
Journal:
Russian Microelectronics
Year:
2015
Language:
english
File:
PDF, 280 KB
Your tags:
english, 2015
13
Obtaining barium hexaferrite brand 7BI215 with improved isotropic properties
Kaneva, I. I.
,
Kostishin, V. G.
,
Andreev, V. G.
,
Chitanov, D. N.
,
Nikolaev, A. N.
,
Kislyakova, E. I.
Journal:
Russian Microelectronics
Year:
2015
Language:
english
File:
PDF, 1.32 MB
Your tags:
english, 2015
14
Influence of the silicon layer’s properties on the capacitance parameters of MIS/SOS structures
K. L. Enisherlova,V. G. Goryachev,E. M. Temper,S. A. Kapilin
Journal:
Russian Microelectronics
Year:
2015
Language:
english
File:
PDF, 461 KB
Your tags:
english, 2015
15
Structures and electronic properties of defects on the borders of silicon bonded wafers
A. N. Tereshchenko,E. A. Steinman,A. A. Mazilkin…
Journal:
Russian Microelectronics
Year:
2015
Language:
english
File:
PDF, 595 KB
Your tags:
english, 2015
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