Volume 44; Issue 8

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Russian Microelectronics
Volume 44; Issue 8

Russian Microelectronics

Volume 44; Issue 8

1

Enhanced magnetoresistive effect in the arrays of nickel nanorods on silicon substrates

Fedotova, Yu. A., Ivanov, D. K., Ivanova, Yu. A., Saad, A., Mazanik, A. V., Svito, I. A., Strel’tsov, E. A., Fedotov, A. K., Tyutyunnikov, S. I., Apel’, P. Yu.

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 273 KB

english, 2015

2

Metal oxide nanoparticles synthesized on porous silicon substrates

Kononova, I. E., Lenshin, A. S., An’chkov, M. G., Moshnikov, V. A.

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 627 KB

english, 2015

3

Structure investigation of large single crystals of gallium antimonide grown by the Czochralski method in the [100] direction

Ezhlov, V. S., Mil’vidskaya, A. G., Molodtsova, E. V., Mezhennyi, M. V.

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 562 KB

english, 2015

4

Long-range stresses generated by misfit dislocations in epitaxial films

Trukhanov, E. M., Kolesnikov, A. V., Loshkarev, I. D.

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 523 KB

english, 2015

5

Diagnostics of the technological characteristics of high–power transistors using relaxation impedance spectrometry of thermal processes

Vaskou, A. S., Niss, V. S., Kononenko, V. K., Turtsevich, A. S., Rubtsevich, I. I., Solov’ev, Ya. A., Kerentsev, A. F.

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 682 KB

english, 2015

6

Method of determining nondestructive pulsed laser annealing modes for dielectric and semiconductor wafers

Kovalenko, A. F., Vorobiev, A. A.

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 249 KB

english, 2015

7

Boundary processes in the electrolyte–silicon interface area during the self-organization of the mosaic structure of 3D islets of porous silicon nanocrystallites in the long-term anode etching ofp-Si (100) in electrolyte with an internal current source

Tynyshtykbaev, K. B., Ryabikin, Yu. A., Tokmoldin, S. Zh., Rakymetov, B. A., Aytmukan, T., Abdullin, Kh. A.

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 1.04 MB

english, 2015

8

Solar cells with a charge pump: Theoretical prospects and technological aspects of the application

Gusev, V. A., Starkov, V. V., Teterskii, A. V.

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 402 KB

english, 2015

9

Synthesis of porous silicon with silver nanoparticles by low-energy ion implantation

Batalov, R. I., Valeev, V. F., Nuzhdin, V. I., Vorebev, V. V., Osin, Yu. N., Lebedev, D. V., Bukharaev, A. A., Stepanov, A. L.

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 2.00 MB

english, 2015

10

Cellular automaton model of phase separation during annealing of nonstoichiometric silicon oxide layers

Krasnikov, G. Ya., Zaitsev, N. A., Matyushkin, I. V., Korobov, S. V.

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 1.77 MB

english, 2015

11

Processes during annealing of Ti–Al–Ni and Ti–Al–Ni–Au contact metallization systems

Vanyukhin, K. D., Zakharchenko, R. V., Kargin, N. I., Pashkov, M. V., Seidman, L. A.

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 922 KB

english, 2015

12

Determination of the indium arsenide autoepitaxial layers’ thickness by Fourier-Transform Infrared Spectroscopy

Komkov, O. S., Firsov, D. D., Kovalishina, E. A., Petrov, A. S.

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 280 KB

english, 2015

13

Obtaining barium hexaferrite brand 7BI215 with improved isotropic properties

Kaneva, I. I., Kostishin, V. G., Andreev, V. G., Chitanov, D. N., Nikolaev, A. N., Kislyakova, E. I.

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 1.32 MB

english, 2015

14

Influence of the silicon layer’s properties on the capacitance parameters of MIS/SOS structures

K. L. Enisherlova,V. G. Goryachev,E. M. Temper,S. A. Kapilin

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 461 KB

english, 2015

15

Structures and electronic properties of defects on the borders of silicon bonded wafers

A. N. Tereshchenko,E. A. Steinman,A. A. Mazilkin…

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 595 KB

english, 2015