Volume 22; Issue 4

Semiconductor Science and Technology

Volume 22; Issue 4

1

Response of machining-damaged single-crystalline silicon wafers to nanosecond pulsed laser irradiation

Yan, Jiwang, Asami, Tooru, Kuriyagawa, Tsunemoto

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 287 KB

english, 2007

2

An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms

Rodriguez, N, Roldán, J B, Gámiz, F

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 142 KB

english, 2007

3

High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm

Salhi, A, Fortunato, L, Martiradonna, L, Todaro, M T, Cingolani, R, Passaseo, A, Vittorio, M De

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 185 KB

english, 2007

4

Investigation of analogue performance for process-induced-strained PMOSFETs

Kuo, Jack J-Y, Chen, William P-N, Su, Pin

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 150 KB

english, 2007

5

Tunable long-wavelength broad band asymmetric quantum well infrared photodetector

Hostut, M, Kartal, D, Ergun, Y, Sokmen, I

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 432 KB

english, 2007

6

Spin–orbit effects in single electron quantum rings

Alves, F M, Marques, G E, López-Richard, V, Trallero-Giner, C

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 725 KB

english, 2007

7

Enhancement in wafer bow of free-standing GaN substrates due to high-dose hydrogen implantation: implications for GaN layer transfer applications

Singh, R, Radu, I, Bruederl, G, Eichler, C, Haerle, V, Gösele, U, Christiansen, S H

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 386 KB

english, 2007

8

Unified model for physics-based modelling of a new device architecture: triple material gate oxide stack epitaxial channel profile (TRIMGAS Epi) MOSFET

Goel, Kirti, Saxena, Manoj, Gupta, Mridula, Gupta, R S

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 305 KB

english, 2007

9

Tensile-strained Si layers grown on Si 0.6 Ge 0.4 and Si 0.5 Ge 0.5 virtual substrates: II. Strain and defects

Hartmann, J M, Abbadie, A, Rouchon, D, Mermoux, M, Billon, T

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 725 KB

english, 2007

10

In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering

Meduna, M, Novák, J, Bauer, G, Holý, V, Falub, C V, Tsujino, S, Grützmacher, D

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 563 KB

english, 2007

11

Quantization effects on the phonon-limited electron mobility in ultrathin SOI, sSOI and GeOI devices

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 151 KB

english, 2007

12

Plasma ash modulation of TDDB thermal activation energy in damascene SiOC:H

Li, Yunlong, Tokei, Zsolt, Aelst, Joke Van, Carbonell, Laureen, Baklanov, Mikhaïl R, Richard, Olivier, Bender, Hugo, Groeseneken, Guido, Maex, Karen

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 792 KB

english, 2007

13

On the difference in the apparent barrier height of inhomogeneous Schottky diodes with a Gaussian distribution

Rouag, N, Boussouar, L, Toumi, S, Ouennoughi, Z, Djouadi, M A

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 197 KB

english, 2007

14

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

Allerstam, F, Gudjónsson, G, Ólafsson, H Ö, Sveinbjörnsson, E Ö, Rödle, T, Jos, R

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 182 KB

english, 2007

15

Influence of HCl etching on the electronic properties of LAO-defined nanostructures

Schleser, R, Kicin, S, Roth, C, Ebneter, C, Leturcq, R, Ensslin, K, Driscoll, D C, Gossard, A C

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 264 KB

english, 2007

16

Tensile-strained Si layers grown on Si 0.6 Ge 0.4 and Si 0.5 Ge 0.5 virtual substrates: I. Film thickness and morphology

Hartmann, J M, Abbadie, A, Guinche, Y, Holliger, P, Rolland, G, Buisson, M, Defranoux, C, Pierrel, F, Billon, T

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 1.74 MB

english, 2007

17

The eight-level k sdot p model for the conduction and valence bands of InAs, InP, InSb

Radhia, S Ben, Fraj, N, Saidi, I, Boujdaria, K

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 223 KB

english, 2007

18

Transverse averaging technique for the depletion capacitance of nonuniform PN-junctions

Barybin, Anatoly A, Santos, Edval J P

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 200 KB

english, 2007

19

Optical and photoelectrical properties of GeSi nanoislands

Valakh, M Ya, Dzhagan, V M, Yukhymchuk, V O, Vakulenko, O V, Kondratenko, S V, Nikolenko, A S

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 185 KB

english, 2007

20

Enhanced f T and linearity performance of InGaP/GaAs HBTs using a non-uniform doping collector

Wang, Che-ming, Hsin, Yue-ming

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 458 KB

english, 2007

21

Long-term reliability studies of high-power 808 nm tapered diode lasers with stable beam quality

Dittmar, F, Sumpf, B, Erbert, G, Tränkle, G

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 339 KB

english, 2007

22

Improved tolerance to operation temperature in δ-doped inverted HFETs

González, B, Hernández, A

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 188 KB

english, 2007

23

Optical and electronic properties of ZnO:P/n + -Si heterostructures fabricated by metalorganic chemical vapour deposition

Zhu, H, Du, G, Li, X, Zhang, Y, Cui, Y, Huang, K, Xia, X, Yang, T, Zhang, B, Chang, Y

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 273 KB

english, 2007

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