Volume 3; Issue 2

Semiconductor Science and Technology

Volume 3; Issue 2

1

On the Joule self-heating current increase corresponding to a non-switching voltage in bulk glassy semiconductors

Marquez, E, Villares, P, Jimenez-Garay, R

Journal:

Semiconductor Science and Technology

Year:

1988

Language:

english

File:

PDF, 388 KB

english, 1988

2

The influence of interfacial morphology and composition on the behaviour of AuGeNi contacts to InP

Anderson, D A, Graham, R J, Steeds, J W

Journal:

Semiconductor Science and Technology

Year:

1988

Language:

english

File:

PDF, 1.73 MB

english, 1988

3

Remote impurity scattering in heterojunctions

Hall, P J van, Klaver, T, Wolter, J H

Journal:

Semiconductor Science and Technology

Year:

1988

Language:

english

File:

PDF, 395 KB

english, 1988

4

Opto-electronic characteristics of chemically deposited cadmium sulphide thin films

Nair, P K, Campos, J, Nair, M T S

Journal:

Semiconductor Science and Technology

Year:

1988

Language:

english

File:

PDF, 1.26 MB

english, 1988

5

An approximate treatment of localised vibrational modes

Leigh, R S, Newman, R C

Journal:

Semiconductor Science and Technology

Year:

1988

Language:

english

File:

PDF, 619 KB

english, 1988

6

On the impedance associate with electron-hole recombination in the space charge layer of an illuminated semiconductor/electrolyte interface

Vanmaekelbergh, D, Cardon, F

Journal:

Semiconductor Science and Technology

Year:

1988

Language:

english

File:

PDF, 906 KB

english, 1988

7

Statistically screened impurity scattering in modulation-doped structures

Journal:

Semiconductor Science and Technology

Year:

1988

Language:

english

File:

PDF, 418 KB

english, 1988

8

Scattering mechanisms of the Hall effect and transverse magnetoresistance in nondegenerate piezo-electric semiconductors

Wu, Chhi-Chong, Lin, Chau-Jy, Tsai, Jensan

Journal:

Semiconductor Science and Technology

Year:

1988

Language:

english

File:

PDF, 707 KB

english, 1988

9

A new look at ZnSe/GaAs heterostructures

Walsh, D, Mazuruk, K, Benzaquen, M, Weissfloch, P

Journal:

Semiconductor Science and Technology

Year:

1988

Language:

english

File:

PDF, 350 KB

english, 1988

10

The anomalous Hall effect for n-type Hg 0.8 Cd 0.2 Te grown by the solid state recrystallisation technique

Basson, J H, Booyens, H

Journal:

Semiconductor Science and Technology

Year:

1988

Language:

english

File:

PDF, 411 KB

english, 1988

11

Determination of the residual carbon acceptor concentration in semi-insulating GaAs wafers by IR spectroscopy: accuracy and detection limits

Journal:

Semiconductor Science and Technology

Year:

1988

Language:

english

File:

PDF, 594 KB

english, 1988

12

The effect of radiation damage on carrier mobility in neutron-transmutation-doped silicon

Maekawa, T, Inoue, S, Aiura, M, Usami, A

Journal:

Semiconductor Science and Technology

Year:

1988

Language:

english

File:

PDF, 718 KB

english, 1988

13

Structured-base hot-electron transistors. I. Scattering rates

Journal:

Semiconductor Science and Technology

Year:

1988

Language:

english

File:

PDF, 828 KB

english, 1988

14

Isoelectronic substitutional impurity-induced optical absorption in an NaCl-type semiconductor

Hugel, J, Chetouane, K, Parlebas, J C

Journal:

Semiconductor Science and Technology

Year:

1988

Language:

english

File:

PDF, 375 KB

english, 1988

15

Calculations of bound states in the valence band of AIAs/GaAs/AIAs and AIGaAs/GaAs/AIGaAs quantum wells

Brand, S, Hughes, D T

Journal:

Semiconductor Science and Technology

Year:

1988

File:

PDF, 27 KB

1988