Volume 36; Issue 3

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Semiconductors
Volume 36; Issue 3

Semiconductors

Volume 36; Issue 3

1

Clustering of defects and impurities in hydrogenated single-crystal silicon

Kh. A. Abdulin, Yu. V. Gorelkinskii, B. N. Mukashev, S. Zh. Tokmoldin

Journal:

Year:

2002

Language:

english

File:

PDF, 141 KB

english, 2002

2

Rapid thermal annealing of gallium arsenide implanted with sulfur ions

V. M. Ardyshev, M. V. Ardyshev

Journal:

Year:

2002

Language:

english

File:

PDF, 45 KB

english, 2002

3

The preexponential factor in Mott’s law for variable-range-hopping conduction in lightly compensatedp-Hg0.8Cd0.2Te crystals

V. V. Bogoboyashchii

Journal:

Year:

2002

Language:

english

File:

PDF, 82 KB

english, 2002

4

E0photoreflectance spectra of GaAs: Identification of the features related to impurity transitions

R. V. Kusmenko, É. P. Domashevskaya

Journal:

Year:

2002

Language:

english

File:

PDF, 53 KB

english, 2002

5

Temperature dependence of thermoelectric power inn-InSb in a transverse quantizing magnetic field

M. M. Gadzhialiev

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Year:

2002

Language:

english

File:

PDF, 39 KB

english, 2002

6

Effect of annealing in oxygen radicals on luminescence and electrical conductivity of ZnO:N films

A. N. Georgobiani, A. N. Gruzintsev, V. T. Volkov, M. O. Vorob’ev

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Year:

2002

Language:

english

File:

PDF, 64 KB

english, 2002

7

Effective exciton mass in III-V semiconductors

N. S. Averkiev, K. S. Romanov

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Year:

2002

Language:

english

File:

PDF, 41 KB

english, 2002

8

Special features of charge transport in PbGa2Se4crystals

B. G. Tagiev, N. N. Musaeva, R. B. Dzhabbarov

Journal:

Year:

2002

Language:

english

File:

PDF, 50 KB

english, 2002

9

Efficiency of the intercalation of aluminum atoms under a monolayer and submonolayer two-dimensional graphite film on a metal

N. R. Gall, E. V. Rut’kov, A. Ya. Tontegode

Journal:

Year:

2002

Language:

english

File:

PDF, 74 KB

english, 2002

10

Simulation of hydrogen penetration intop-type silicon under wet chemical etching

O. V. Feklisova, E. B. Yakimov, N. A. Yarykin

Journal:

Year:

2002

Language:

english

File:

PDF, 54 KB

english, 2002

11

Internal ionization energy in II-VI compounds

A. V. Komashchenko, V. N. Komashchenko, K. V. Kolezhuk, G. I. Sheremetova, V. D. Fursenko, Yu. N. Bobrenko

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Year:

2002

Language:

english

File:

PDF, 55 KB

english, 2002

12

Influence of the misfit-dislocation screw component on the formation of threading dislocations in semiconductor heterostructures

E. M. Trukhanov, A. V. Kolesnikov, A. P. Vasilenko, A. K. Gutakovskii

Journal:

Year:

2002

Language:

english

File:

PDF, 169 KB

english, 2002

13

Optical properties of ultradisperse CdSexTe1−x(0≤x≤1) particles in a silicate glass matrix

I. V. Bodnar, V. S. Gurin, A. P. Molochko, N. P. Solovei, P. V. Prokoshin, K. V. Yumashev

Journal:

Year:

2002

Language:

english

File:

PDF, 267 KB

english, 2002

14

Soliton shape stabilization in a superlattice with next-to-nearest neighbor spectrum in a field of a nonlinear wave

S. V. Kryuchkov, É. G. Fedorov

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Year:

2002

Language:

english

File:

PDF, 54 KB

english, 2002

15

Resonance transitions between split levels in three-barrier nanostructures and the prospects of using these structures in devices operating in the submillimeter-wave band

E. I. Golant, A. B. Pashkovskii

Journal:

Year:

2002

Language:

english

File:

PDF, 91 KB

english, 2002

16

Microwave photoconductivity in nanocrystalline porous titanium oxide subjected to pulsed laser excitation

E. A. Konstantinova, V. Yu. Timoshenko, P. K. Kashkarov, V. G. Kytin, V. Ya. Gaivoronskii, H. Porteanu, Th. Dittrich, F. Koch

Journal:

Year:

2002

Language:

english

File:

PDF, 85 KB

english, 2002

17

Special features of recombination of nonequilibrium charge carriers in porous silicon with different nanostructure morphologies

M. G. Lisachenko, E. A. Konstantinov, V. Yu. Timoshenko, P. K. Kashkarov

Journal:

Year:

2002

Language:

english

File:

PDF, 63 KB

english, 2002

18

Changes in properties of a 〈porous silicon〉/silicon system during gradual etching off of the porous silicon layer

E. F. Venger, T. Ya. Gorbach, S. I. Kirillova, V. E. Primachenko, V. A. Chernobai

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Year:

2002

Language:

english

File:

PDF, 124 KB

english, 2002

19

Carrier transport in porous silicon

N. S. Averkiev, L. P. Kazakova, N. N. Smirnova

Journal:

Year:

2002

Language:

english

File:

PDF, 65 KB

english, 2002

20

Solar cells based on CuIn1−xGaxSe2films obtained by pulsed laser evaporation

V. F. Gremenok, I. V. Bodnar’, V. Yu. Rud’, Yu. V. Rud’, H. -W. Schock

Journal:

Year:

2002

Language:

english

File:

PDF, 57 KB

english, 2002

21

Analysis of threshold current density and optical gain in InGaAsP quantum well lasers

N. A. Pikhtin, S. O. Sliptchenko, Z. N. Sokolova, I. S. Tarasov

Journal:

Year:

2002

Language:

english

File:

PDF, 120 KB

english, 2002

22

The use of SiC triode structures as detectors of nuclear particles

N. B. Strokan, A. M. Ivanov, N. S. Savkina, D. V. Davydov, E. V. Bogdanova, A. A. Lebedev

Journal:

Year:

2002

Language:

english

File:

PDF, 56 KB

english, 2002

23

Electrical properties of silicon layers implanted with erbium and oxygen ions in a wide dose range and thermally treated in different temperature conditions

O. V. Aleksandrov, A. O. Zakhar’in, N. A. Sobolev, Yu. A. Nikolaev

Journal:

Year:

2002

Language:

english

File:

PDF, 60 KB

english, 2002

24

Igor’ Georgievich Neizvestny(overset{lower0.5emhbox{(smash{scriptscriptstylesmile})}}{l} )(on his 70th birthday)

Journal:

Year:

2002

Language:

english

File:

PDF, 86 KB

english, 2002

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