Volume 137

Solid-State Electronics

Volume 137

1

ESD robustness concern for SOI-LIGBTs with typical latch-up immunity structures

Ye, Ran, Liu, Siyang, Sun, Weifeng, Hou, Bo

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 672 KB

english, 2017

2

A novel thin-film transistor with step gate-overlapped lightly doped drain and raised source/drain design

Chien, Feng-Tso, Chen, Jian-Liang, Chen, Chien-Ming, Chen, Chii-Wen, Cheng, Ching-Hwa, Chiu, Hsien-Chin

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 959 KB

english, 2017

3

Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse

Hemmi, Fuyumi, Thomas, Cedric, Lai, Yi-Chun, Higo, Akio, Watamura, Yoh, Samukawa, Seiji, Otsuji, Taiichi, Suemitsu, Tetsuya

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.46 MB

english, 2017

4

Abnormal behavior with hump characteristics in current stressed a-InGaZnO thin film transistors

Kim, Woo-Sic, Cho, Yong-Jung, Lee, Yeol-Hyeong, Park, JeongKi, Kim, GeonTae, Kim, Ohyun

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 2.33 MB

english, 2017

5

Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates

Wang, Hui, Wang, Ning, Jiang, Ling-Li, Zhao, Hai-Yue, Lin, Xin-Peng, Yu, Hong-Yu

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.53 MB

english, 2017

6

A nonlinear model for frequency dispersion and DC intrinsic parameter extraction for GaN-based HEMT

Nguyen, Tung The-Lam, Kim, Sam-Dong

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 2.17 MB

english, 2017

7

Editorial Board

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 38 KB

english, 2017